Low-threshold quantum-well AlGaAs heterolasers fabricated by low-temperature liquid phase epitaxy and emitting at wavelengths 730-850 nm

Abstract

An investigation was made of lasers based on AlGaAs heterostructures and emitting at wavelengths of 730-850 nm, which were varied by altering the AlAs content in a single quantum well of 150 A thickness. These structures were grown by low-temperature liquid phase epitaxy. The lowest values of the threshold current density j th were 380 A/cm 2 for emission at λ l =760 nm and 120 A/cm 2 for λ l =845 nm; these values were obtained for a resonator L=700 μm long