2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)最新文献_第8页

Copper wire bond on MCM device (bond stitch on bump ball) MCM设备上的铜线粘合(凹凸球上的粘合缝)

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521750

Tan Boo Wei, Niu You Hua

引用次数: 1

Sensitivity study of channel termination on vertical side-chip interconnection 垂直侧片互连中信道终端的灵敏度研究

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521778

J. Kong, B. E. Cheah, A. H. Tan

引用次数: 0

Development of insulated Cu wire ball bonding 绝缘铜线球键合的研制

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521829

H. Leong, Faizal Zulkifli Mohd, M. R. Ibrahim, Wong Boh Kid, N. Khan, Y. B. Kar, L. C. Tan

{"title":"Development of insulated Cu wire ball bonding","authors":"H. Leong, Faizal Zulkifli Mohd, M. R. Ibrahim, Wong Boh Kid, N. Khan, Y. B. Kar, L. C. Tan","doi":"10.1109/IEMT.2012.6521829","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521829","url":null,"abstract":"Insulated Cu wire is the next generation technology in fine pitch and high density wire bonding, which enables wire crossing and touching without concern for wire-to-wire shorts. However, insulated Cu wire bonding is still at the infant stage compared to Cu wire bonding. This study investigates the wire bond process in term of free air ball (FAB) and ball formation using 20μm Cu wire and insulated Cu wire with target bonded ball size about 35μm. Insulated Cu wire needs a different set of EFO setting compared to Cu wire. Spherical and residue free FAB of insulated Cu was able to form with forming gas. With a set electric flame off (EFO) setting, insulated Cu FAB consistently larger than Cu FAB. The experimental results show clearly that the energy required for the FAB formation for insulated Cu wire is ~20% lower than the Cu wire, probably due to the lesser heat loss from the wire during the EFO firing. Key bonding parameters for insulated Cu were EFO current, EFO time, bond power and bond force to meet the required ball size. This study shows that insulated Cu wire requires less demanding ball bond parameters than Cu wire, indicating softer ball which could be favorable for the sensitive bond structures. Bonding strength in term of ball shear and wire pull strength between the insulated Cu wire and Cu wire is very similar. Other key responses such as Al remnant, pad cratering and intermetallic compound have been studied and will be discussed in details in the paper. Our research successfully established good wire bonding process conditions for the insulated Cu wire and subsequently demonstrated that the technology is feasible using presently available wire bonder.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123163282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Bonding of Ag-alloy wire in LED packages 银合金线在LED封装中的粘接

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521833

Jie Wu, T. Rockey, O. Yauw, Liming Shen, B. Chylak

引用次数: 14

Effect of Ni, Ge and P addition in Sn-Ag-Cu lead-free solder on solder joint properties with electroless Ni/Au electrodes Sn-Ag-Cu无铅焊料中添加Ni、Ge和P对化学镀Ni/Au电极焊点性能的影响

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521759

I. Shohji, R. Arai

引用次数: 0

Patterning of multi-leveled microstructures on flexible polymer substrate using roll-to-roll ultraviolet nanoimprint lithography 柔性聚合物基板上多层微结构的卷对卷紫外纳米压印成像

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521804

N. Kooy, N. Rahman, K. Mohamed

{"title":"Patterning of multi-leveled microstructures on flexible polymer substrate using roll-to-roll ultraviolet nanoimprint lithography","authors":"N. Kooy, N. Rahman, K. Mohamed","doi":"10.1109/IEMT.2012.6521804","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521804","url":null,"abstract":"The recent developments of flexible electronics, biochips, optical devices and micro/nano-electro-mechanical-systems (MEMS/NEMS) have featured various complex three-dimensional or multileveled micro/ nano structures in its designs. However, fabricating these structures using the existing technologies such as photolithography and electron beam lithography (EBL) are time consuming and involved high process costs. Nevertheless, the production of these microstructures at high volume manufacturing scale has led to the demand for a simpler, low-coat and high-throughput technique for patterning process. In the present work, multi-level microstructures (3-levels) with minimum feature size of approximately 50 μm are continuously patterned onto flexible polymer substrate using in-house designed roll-to-roll ultraviolet nanoimprint lithography (R2R-UV-NIL) system. Using a commercially available 50μm-thick polyethylene terephthalate (PET) film as the flexible substrate and SU8-2002 photopolymer as the imprint resist, continuous patterning of the multi-level structures has been demonstrated at speed of 100 mm/min using R2R-UV-NIL imprinting tool. Ten imprints were produced consecutively, where the confocal laser scanning microscopy (CLSM) measurements of the imprints demonstrated the potential of the R2R-UV-NIL technique to replicate multi-level structures, albeit the pattern waviness or plane flatness issue due to the deformation of the soft PDMS mold. With further process optimization and usage of a harder mold material, the R2R-UV-NIL is a promising technique and tool for fabricating complex 3D and multi-level microstructures on flexible substrate for future applications.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125259307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Development of advanced fan-out wafer level package (embedded wafer level BGA) 先进扇出晶圆级封装(嵌入式晶圆级BGA)的开发

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521783

Yonggang Jin, J. Teysseyre, A. Liu, G. Goh, S. Yoon

引用次数: 2

Automated assembly lot transaction 自动化装配批交易

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521772

M. Tiong, Thiruselvam, R. Tugay

引用次数: 0

Investigation of wetting behavior of Sn-3Ag-0.5Cu solder paste to BGA solder ball Sn-3Ag-0.5Cu锡膏对BGA锡球润湿行为的研究

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521758

M. H. Yahya, K. Nakamura, I. Shohji, T. Housen, Y. Yamamoto, Y. Kaga

引用次数: 1

Elimination of integrated circuit bond pad crater test over rejection 消除集成电路键合垫坑试验过排斥

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI: 10.1109/IEMT.2012.6521794

R. Balabbo, M. Picardal

{"title":"Elimination of integrated circuit bond pad crater test over rejection","authors":"R. Balabbo, M. Picardal","doi":"10.1109/IEMT.2012.6521794","DOIUrl":"https://doi.org/10.1109/IEMT.2012.6521794","url":null,"abstract":"Wirebond interconnect reliability in integrated circuit, IC, chip is one of the key characteristic for the IC's performance during its function. One of the common and known interconnect reliability failures is cratering or the Wirebonding or Probing process related damage in bond pad surface and underlying material. This study determined that cratering is not only Wirebond or Probe process induced. Cratering can also be induced by the chemical test preparation, the etching process. Samples for pad cratering test are pulled out after Wirebond. To determine if there is damage in the pad, the wire-pad intermetallic is etched. The complete etching process shows the ball bond lifting and then revealing the pad surface. If not optimized, the etching process in the extreme side or over etch will shift the stress in the pad as the wire lifts. This mean a portion of the pad peels off with the wire resulting to pad damage. This phenomenon was validated in a screening design of experiment, DOE covering temperature before etch start, amount of etching chemicals, volume of samples, and etch time as key input variables. Temperature before etch start was the significant factor at 95% confidence level and was optimized. To avoid over etch; the process should start at 40 degrees Celsius. The cratering test procedure was revised and since then bond pad crater test over rejection was eliminated.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128227101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3