{"title":"Time Resolved Imaging at low power supply on 45nm technology","authors":"G. Bascoul, P. Perdu, G. Celi, S. Dudit, D. Lewis","doi":"10.1109/IPFA.2011.5992726","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992726","url":null,"abstract":"Time Resolved Imaging (TRI) allows real time imaging of transitions in CMOS gates. CMOS Technology trends has challenged this technique. Power Supply decrease has induced a strong reduction of photon emission related to MOS saturation mode and shifted emission to the infrared. In this paper we demonstrate the ability of new time resolved detector to overcome these limits allowing TRI of CMOS 45 nm device at low power supply voltage down to 0.7 Volts.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120908212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ankur Arya, Greg M. Johnson, P. Ronsheim, J. Nxumalo, C. Molella, R. Murphy, S. Lee, C. Daleo, B. Moon, Hiroyuki Onoda, Chung Woh Lai, Shenzhi Yang, Y. Chow, C. Chow, James Lee
{"title":"Leakage issues in failure analysis of p+ SiGe active area short monitor","authors":"Ankur Arya, Greg M. Johnson, P. Ronsheim, J. Nxumalo, C. Molella, R. Murphy, S. Lee, C. Daleo, B. Moon, Hiroyuki Onoda, Chung Woh Lai, Shenzhi Yang, Y. Chow, C. Chow, James Lee","doi":"10.1109/IPFA.2011.5992769","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992769","url":null,"abstract":"During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide real defect induced leakage. This paper investigates different sources of leakages - defects in SiGe, pressure due to tester probe on test pads, silicidation issues and boron P+ and arsenic N halo ion implants dose/energy. Some changes to mitigate the extraneous leakage are also presented in the paper.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117347286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soon Ju Lee, Ju Hee Lee, W. Kim, J. H. Kim, Hyung Do Kim, Hee Chang Jang, H. Kim, Ho Joung Kim
{"title":"A new approach to the study of single bit failure mechanism in semiconductor devices","authors":"Soon Ju Lee, Ju Hee Lee, W. Kim, J. H. Kim, Hyung Do Kim, Hee Chang Jang, H. Kim, Ho Joung Kim","doi":"10.1109/IPFA.2011.5992784","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992784","url":null,"abstract":"An investigation of open-contact failures in semiconductor devices is common issue. As we changed the cleaning condition of the contact, open failure happened. This contact has nitride in it and recess profile under it. To solve ambiguous fail mechanism we used various analysis methods. Especially, double XTEM sample image was the key and we confirmed the mechanism by reproducing experiment.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127312171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Kwon, Byoungseon Choi, Hyung-Suk Kuh, Hyunae Park, Byoungdeok Choi
{"title":"A study on off-state leakage current characteristics of asymmetric-metal—oxide—semiconductor field-effect transistors","authors":"S. Kwon, Byoungseon Choi, Hyung-Suk Kuh, Hyunae Park, Byoungdeok Choi","doi":"10.1109/IPFA.2011.5992715","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992715","url":null,"abstract":"In this study, we extract the off-state current component from the asymmetric transistors in short channel 40nm DRAM. Through a quantitative comparison of λ(DIBL coefficient), we explained by differences in deep high doped drain(nλ=0.1576) and shallow low doped drain(nλ=0.0168) of off-stat current.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132997881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Myeong Kim, Myeong-Hyeok Jeong, Sang-Hyun Kwon, S. Yoo, Young-Bae Park
{"title":"Comparisons of mechanical reliabilities of Sn-3.0Ag-0.5Cu solder between ENIG and immersion Sn pad finishes","authors":"Jae-Myeong Kim, Myeong-Hyeok Jeong, Sang-Hyun Kwon, S. Yoo, Young-Bae Park","doi":"10.1109/IPFA.2011.5992741","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992741","url":null,"abstract":"The effects of electroless nickel immersion gold (ENIG) and immersion Sn pad finishes on the shear strength of Sn-3.0Ag-0.5Cu solder joints were investigated under the various loading speeds of 0.2∼1,000 mm/s. shear strength increased with increasing shear speed, while ductility and toughness decreased, while immersion Sn finish showed lower shear strength rather than ENIG finish. Overall, ENIG finish showed ductile to brittle fracture mode transition with increasing shear speed while immersion Sn finish only showed increasing brittle fracture mode ratio. Therefore, strong interfacial adhesion of ENIG finish rather than immersion Sn finish seems to be related to stronger bonding strength and also higher toughness of ENIG finish.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128466784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses","authors":"Yandong He, Ganggang Zhang","doi":"10.1109/IPFA.2011.5992767","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992767","url":null,"abstract":"A detail experimental study on the reliability degradation of pMOSFET under non-uniform NBTI stress was conducted. The relationship of drain bias under non-uniform NBTI stress was obtained and a turning curve was found. The non-uniform stress induced degradation can be separated into two different region based on the drain bias dependency, and the model for each region was developed and evaluated under various voltage and temperature. In addition, the conventional and enhanced NBTI stress demonstrated reverse temperature dependency. The non-uniform NBTI stress exhibited much lower recovery level, and its acceleration factor was similar to pure NBTI stress. From the temperature and voltage acceleration point of view, our results show that the non-uniform NBTI stress becomes the worst reliability corner for pMOSFETs with ultra thin gate oxynitride. The NBTI degradation with nominal drain bias was proposed to become as a device lifetime monitor for pMOSFETs.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115356330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. K. Lim, S. Yuan, J. B. Tan, A. Yeo, Y. Hua, N. R. Rao, S. Siah
{"title":"Wire bonding, bumping & assembly related failures & improvements","authors":"Y. K. Lim, S. Yuan, J. B. Tan, A. Yeo, Y. Hua, N. R. Rao, S. Siah","doi":"10.1109/IPFA.2011.5992798","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992798","url":null,"abstract":"In this paper, investigation of wire bonding, bumping and assembly related failures are performed using optical microscopy, secondary electron microscopy and transmission electron microscopy. Also, the understandings of the failures and root causes are presented. For example, corrosions caused by contaminant such as Fluorine and Cu precipitates on Al-Cu alloyed bond pads that lead to discolored or non-stick on pads problem are discussed. In addition, the formation of small bumps when oxide/silicon nitride passivation is employed and chipping at die edges caused during assembly that leads to open-circuit are studied. In conclusion, possible solutions of these failures are recommended to achieve robust assembly and packaging.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115730481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Landscape for semiconductor analysis: Issues and challenges","authors":"Kinam Kim, G. Park","doi":"10.1109/IPFA.2011.5992801","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992801","url":null,"abstract":"This paper summarizes the landscape for semiconductor analysis. High-resolution imaging and microanalysis are discussed first because they are used in most of the core process technologies that enable device scaling beyond the current 30 nm technology node. Key technology for analysis of dopant distribution, contamination, and strain is reviewed from the viewpoints of sensitivity, spatial resolution, contamination level, and defect size. The final section describes microscopy based on in situ techniques, which can play an important role in developing extended complementary metal-oxide-semiconductor (CMOS) and beyond CMOS as well as play a role in understanding the fundamental physics of new and emerging semiconductor devices. Within each technology area, future directions that are being driven by new materials and processes are briefly outlined.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122167173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Threshold voltage changed by floating gate control in electrolyte-insulator-semiconductor structure","authors":"Hyurk-Choon Kwon, H. Yuan, S. Yeom, Shin-Won Kang","doi":"10.1109/IPFA.2011.5992783","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992783","url":null,"abstract":"A method for controlling the threshold voltage which has a significant problem in ion-sensitive transistors (IST) with floating gate structures was proposed in this study. Gated lateral pnp-type bipolar junction transistor (BJT) was used in our experiment and was immerged in ionic solution. The experiment results indicated that under a large negative gate bias condition, the threshold voltage can shift in normal state with specific bias. Moreover, we discussed the reasons for the changing phenomenon of threshold voltage in dielectric of gated lateral BJT in electrolyte.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122203984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Noh, Eun-Hey Choi, Yong-Hyuk Lee, Hyun Ju, S. Rha, B. Lee, Dong-Kyu Kim, Youn-Seoung Lee
{"title":"Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)","authors":"S. Noh, Eun-Hey Choi, Yong-Hyuk Lee, Hyun Ju, S. Rha, B. Lee, Dong-Kyu Kim, Youn-Seoung Lee","doi":"10.1109/IPFA.2011.5992776","DOIUrl":"https://doi.org/10.1109/IPFA.2011.5992776","url":null,"abstract":"We investigated an optimal condition for void-free Cu filling in trench and TSV according to variation of plating DC current density. The copper deposit growth mode in and around the trench (width 100 µm and AR 1) was measured. The deposition rate of top layer on trench was similar to the measured Cu deposition rate on the plane wafer. However, the deposition rate in Cu electroplating was different from the top of the trench and the bottom of it according to variation of plating current density. We found that the deposition rate for all positions (top, bottom, and side-wall) was more uniform at lower plating current density. By application of this growth mode in trench, we could fill copper without void in TSVs of size from diameter 20 µm (AR 4) to 10 µm (AR 6) by Cu electroplating.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130385150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}