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2018 IEEE 8th International Nanoelectronics Conferences (INEC)最新文献

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Flexible pressure and force sensing system for wearable medical devices 用于可穿戴医疗设备的柔性压力和力传感系统
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441930
Ning Xue, Chunxiu Liu, Jianhai Sun, Chao Wang
{"title":"Flexible pressure and force sensing system for wearable medical devices","authors":"Ning Xue, Chunxiu Liu, Jianhai Sun, Chao Wang","doi":"10.1109/INEC.2018.8441930","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441930","url":null,"abstract":"Flexible materials as substrate and/or sensing elements are required for comfortable and conformal wear of such devices. This paper reviews those fabrication technologies and sensor interface circuits for device applications on human skin. Authors' current research overview on flexible pressure sensor on medical application is also discussed.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127504866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evolution of the Physics and Stochastics of Failure in Ultra-Thin Dielectrics - From SiO2 to Advanced High-K Gate Stacks 超薄电介质失效的物理和随机演化——从SiO2到先进的高k栅极堆
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441910
N. Raghavan
{"title":"Evolution of the Physics and Stochastics of Failure in Ultra-Thin Dielectrics - From SiO2 to Advanced High-K Gate Stacks","authors":"N. Raghavan","doi":"10.1109/INEC.2018.8441910","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441910","url":null,"abstract":"Dielectric breakdown in logic devices has been a subject of intense study for several decades. With changing dielectric thickness due to downscaling of complementary metal oxide semiconductor (CMOS) technology as well as the shift from SiO2 to other high permittivity dielectric materials, there is a noteworthy change in the physics of failure and the statistical trend of soft, progressive and hard breakdown in oxide films. This study presents a brief summary comparing the physical mechanisms of breakdown and associated stochastics of the failure time distribution in SiO2 and high-κ (HfO2. It is clearly evident that there is a continuous need for more research into oxide breakdown, given the shift towards 2D layered dielectrics such as hexagonal boron nitride in the near future, with markedly different breakdown dynamics.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130484248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 2DOF MEMS Vibrational Energy Harvester 一种2DOF MEMS振动能量采集器
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441919
K. Tao, L.H. Tang, J. Wu, J. Miao
{"title":"A 2DOF MEMS Vibrational Energy Harvester","authors":"K. Tao, L.H. Tang, J. Wu, J. Miao","doi":"10.1109/INEC.2018.8441919","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441919","url":null,"abstract":"In this paper, a novel two-degree-of-freedom (2DOF) MEMS electromagnetic vibration energy harvesting system is proposed. The dual-mass resonant structure that comprises of a primary mass and an accessory mass is structured on silicon-on-insulator (SOI) wafer by double-sided deep reactive-ion etching (DRIE). Unlike previous 2DOF harvesters, the induction coil is only patterned on the primary mass for energy conversion. By carefully adjusting the weight of accessory mass, the first two resonances of the primary mass can be tuned close to each other while maintain comparable magnitudes. Therefore, both resonances could contribute to energy harvesting that make the system more efficient and adaptive in frequency-variant vibrational circumstances. With the current prototype, two close resonances with a frequency ratio of only 1.19 and comparable peaks are achieved, providing good validation for the modeling results.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114922629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability Perspective on the IoT and Nanoelectronics 物联网和纳米电子学的可靠性展望
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441916
C. Tan
{"title":"Reliability Perspective on the IoT and Nanoelectronics","authors":"C. Tan","doi":"10.1109/INEC.2018.8441916","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441916","url":null,"abstract":"Internet of Things (IoT) is coming strongly and we have no escape to it. While current technology and its development can indeed make IoT a reality, its cost has to be much lower and at the same time its reliability must be very high. Furthermore, the necessity of nano-electronics in IoT presents new degradation mechanisms that need to be studied in detail. Thus, it is a huge challenge in reliability field in anticipation of IoT era. This work presents some critical issues and highlight some works that are being done to meet the coming challenges.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114610679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fluxless Flip Chip Interconnects for MEMS Devices for Heterogeneous Integration 用于异构集成的MEMS器件的无磁倒装芯片互连
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441915
T. Lee
{"title":"Fluxless Flip Chip Interconnects for MEMS Devices for Heterogeneous Integration","authors":"T. Lee","doi":"10.1109/INEC.2018.8441915","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441915","url":null,"abstract":"Flip chip technologies (FC) is an enabling technology for heterogeneous integration of MEMS devices. FC reduces the package dimension, improves performance as well as enable scaling up of MEMS chips through 3-D packaging. This paper provide an overview of FC technologies for MEMS and identify the interconnect challenges for MEMS packaging. The paper shares an innovative fluxless FC bonding technique known as solid liquid interdiffusion by compressive force (SLICF) for MEMS packaging.The instantaneous SLICF bonding utilizes a mechanical force to break the Sn oxide layer and allows the submerged body to interact with fresh molten solders to form bonds through solid liquid inter-diffusion. This remove the need of flux and ideal for MEMS packaging for heterogeneous integration. The JIV plugged molten solder in via on flex substrate to enable a fluxless FC bonding for MEMS integration. The fine pitch design rule and foldable of flex substrate enable ease of heterogeneous integration. The bonding architecture enable fluxless FC bonding for heterogeneous integration of MEMS devices to reduce packaging cost and provide a high throughput for heterogeneous integration.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121521545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of multi-walled carbon nanotubes/polydimethylsiloxane composite for electronic skin application 电子皮肤用多壁碳纳米管/聚二甲基硅氧烷复合材料的制备
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441911
C. Chi, Xuguang Sun, Tong Li, Ning Xue, Chang Liu
{"title":"Preparation of multi-walled carbon nanotubes/polydimethylsiloxane composite for electronic skin application","authors":"C. Chi, Xuguang Sun, Tong Li, Ning Xue, Chang Liu","doi":"10.1109/INEC.2018.8441911","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441911","url":null,"abstract":"We compared the six common organic solvents in the solution blending method to prepare MWCNT/PDMS composite, including toluene, ethanol, chloroform, n-hexane, tetrahydrofuran (THF) and dimethylformamide (DMF). We proposed the best choice of organic solvents by comparing the dispersion performance of MWCNT and the stability of MWCNT/PDMS. Then, we present the preparation and micromolding of MWCNT/PDMS composite.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115905568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Fabrication Method of High Height-to-Diameter Ratio Micro-Wineglass Resonators* 高径比微型葡萄酒杯谐振器的制备方法*
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441927
Jianbing Xie, Sen Ren, Q. Shen, Lei Chen, H. Xie, W. Yuan
{"title":"The Fabrication Method of High Height-to-Diameter Ratio Micro-Wineglass Resonators*","authors":"Jianbing Xie, Sen Ren, Q. Shen, Lei Chen, H. Xie, W. Yuan","doi":"10.1109/INEC.2018.8441927","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441927","url":null,"abstract":"This paper presents the fabrication of High Height-to-Diameter Ratio Micro-Wineglass Resonators using glassblowing with thermal decomposition process. CaCO3 is used as the thermal decomposition material in this process in this paper. A number of chips with $200mu text{m}$ deep cavities are fabricated and loaded with different doses of CaCO3. The experiment results show that, the $200mu text{m}$ deep cavity can blowing a glass spherical shell with the H/DR of 0.79, which is better than the $800mu text{m}$ deep cavity glassblowing process without thermal decomposition.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123538159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HCI and NBTI Reliability Simulation for 45nm CMOS using Eldo 基于Eldo的45nm CMOS HCI和NBTI可靠性仿真
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441935
A. Jaafar, N. Soin, S. Hatta
{"title":"HCI and NBTI Reliability Simulation for 45nm CMOS using Eldo","authors":"A. Jaafar, N. Soin, S. Hatta","doi":"10.1109/INEC.2018.8441935","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441935","url":null,"abstract":"Technology scaling on CMOS transistor causes the reliability issues is the main concern by most researchers. HCI and NBTI are the main effects that degrade the CMOS transistor. An analysis of different stages for ring oscillator is analyzed based on HCI and NBTI effect. The acceptable supply voltage for CMOS transistor also analyzed for designer to set the limitation of operational voltage for their design. Eldo simulation shows that the HCI and NBTI degradation on CMOS are stable for 11 and 23 stages of ring oscillator.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114456308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoresistive Effect of Interdigitated Electrode Spacing Graphene-based MEMS Intracranial Pressure Sensor 交错电极间距石墨烯MEMS颅内压传感器的压阻效应
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441925
S. Rahman, N. Soin, F. Ibrahim
{"title":"Piezoresistive Effect of Interdigitated Electrode Spacing Graphene-based MEMS Intracranial Pressure Sensor","authors":"S. Rahman, N. Soin, F. Ibrahim","doi":"10.1109/INEC.2018.8441925","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441925","url":null,"abstract":"Two-dimensional (2D) materials have recently drawn great attention among researchers for emerging electronics. Among these materials, graphene has shown great potential in various types of sensor applications due to its superior electronic and mechanical properties. Its two-dimensionality as well as its high flexibility, conductivity, and transparency make graphene a promising candidate for flexible electronics. This paper reports the development of resistive graphene-based MEMS pressure sensor integrated with interdigitated electrode. These interdigitated electrode structure act as pressure magnifying structure as well as reducing the output non-linearity. A COMSOL simulation was carried out for design optimization of the resistive pressure sensor. In this study, the effect of optimization of the spacing between the Al electrodes is presented to improve the performance of graphene-based pressure sensors at room temperature. Three different spacing distances of 10, 20 and 40 μ m were used as the experimental parameters. The increased spacing could affect in increasing tensile strain on graphene and increased defect generation at the grain boundaries. Therefore, the pressure sensor response could also be improved by increasing the spacing of the interdigitated electrode.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125670175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal characterization of polycrystalline diamond using infrared thermal imaging measurement* 用红外热成像测量方法表征多晶金刚石的热特性*
2018 IEEE 8th International Nanoelectronics Conferences (INEC) Pub Date : 1900-01-01 DOI: 10.1109/INEC.2018.8441928
B. Tay, Q. Kong, L. Bodelot, Brengere Lebental, D. S. Misra
{"title":"Thermal characterization of polycrystalline diamond using infrared thermal imaging measurement*","authors":"B. Tay, Q. Kong, L. Bodelot, Brengere Lebental, D. S. Misra","doi":"10.1109/INEC.2018.8441928","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441928","url":null,"abstract":"Thermal characterization of polycrystalline diamond based on an infrared thermal imaging technique is proposed. The temperature mapping of polycrystalline diamond under a metal wire heating are recorded using a $15~mu text{m}$-resolution infrared thermal imaging system. The thermal conductivity of the polycrystalline diamond is derived from the temperature profile using numerical fitting with a 3D heat diffusion model. The thermal conductivity of the polycrystalline diamond is also determined using a $3omega$ technique. The agreement between the thermal conductivities measured using these two techniques is within 15%.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123088123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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