2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)最新文献_第2页

Joint Material for power semiconductors by Cu-Sn Intermetallic Compound (IMC) 用Cu-Sn金属间化合物(IMC)制备功率半导体接头材料

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760333

Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawav, H. Shindo, T. Ooi, Rei Tamaki

{"title":"Joint Material for power semiconductors by Cu-Sn Intermetallic Compound (IMC)","authors":"Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawav, H. Shindo, T. Ooi, Rei Tamaki","doi":"10.1109/WiPDAAsia.2019.8760333","DOIUrl":"https://doi.org/10.1109/WiPDAAsia.2019.8760333","url":null,"abstract":"This paper is an introduction of heat resistant joint material only using base metals (Cu and Sn) mainly for power semiconductors’ assembly. By sophisticated control of Cu-Sn Intermetallic Compound (IMC) forming procedure, the joint region after sintering has IMC skeleton structure to provide robust and stable joint characteristics. The key components of the developed material are fine particles of Cu source and IMC source. The IMC source contains 8wt% Cu and 92wt% Sn. Remelting point of the joint material (preform-sheet and paste) can be above the sintering temperature. Even using Sn rich component (IMC source), the evaluation indicated no whisker in joint area after TCT 1,000cycles (−55~+175°C) and no allotropic transformation of Sn (between α-phase and β-phase). The joint test using IGBT, SiC and GaN, we confirmed the joint structure keeps its initial condition even after 1,000 cycles TCT without critical cracks/delamination/voids. The joint material is not only for power semiconductor die attach but also for MEMS device encapsulation.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115750071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length 不同栅源长度AlGaN/GaN hemt的线性关系

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760307

Yi-nan Zhong, Y. Hsin

引用次数: 1

Energy Saving in Smart Grid 智能电网的节能

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760321

Yi-Kuan Ke, Chia-Ching Li, Yi-Han Liao

{"title":"Energy Saving in Smart Grid","authors":"Yi-Kuan Ke, Chia-Ching Li, Yi-Han Liao","doi":"10.1109/WiPDAAsia.2019.8760321","DOIUrl":"https://doi.org/10.1109/WiPDAAsia.2019.8760321","url":null,"abstract":"Power demand is increasing gradually and micro-grid dispatch is the important scheme to stable grid operation. It is not easy to build or extend unclear energy in Taiwan and there are the challenges about the pollution issues when making lots of thermal power generations, such as coal-fired power plants, will have carbon emission pollution problems. For increasing power generations, renewable power and hydroelectric power are increased to supply power to grid for dispatching due to concerning pollution reason and supply power shortage in peak time. In smart grid, energy saving is the key point about energy policy. Therefore, advanced metering infrastructure, smart meter, is the core competence to smart grid in energy saving and power dispatch. Smart meter solution with time of use rates, demand response, and aggregator with load shedding applications can help grid dispatch in power forecast precisely and avoid peak time power demand shortage. Energy saving definitely is the development target in the world trend about power system, so smart grid in energy saving analysis is this paper contribution to comprehend and enhance grid stability and reliability.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"64 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114109536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Research of PCB Parasitic Inductance in the GaN Transistor Power Loop GaN晶体管功率环中PCB寄生电感的研究

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760312

B. Sun, Zhe Zhang, M. Andersen

引用次数: 4

Study of Passivation Layer on Bevel Edge Termination for SiC RSD SiC RSD斜角端端钝化层的研究

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760331

Ziyue Wang, Lin Liang, Ludan Zhang

引用次数: 0

WiPDA Asia 2019 Keynotes WiPDA亚洲2019主题演讲

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/wipdaasia.2019.8760337

引用次数: 0

Optimizing performance of a pulsed laser diode driver based on a GaN FET 基于氮化镓场效应管的脉冲激光二极管驱动器的性能优化

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760309

J. Glaser

引用次数: 3

Development of a Novel Battery-Powered DC-AC System 新型电池供电直流-交流系统的研制

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760330

Ching-Ming Lai, J. Teh, Yuan-Chih Lin, C. Hsu

{"title":"Development of a Novel Battery-Powered DC-AC System","authors":"Ching-Ming Lai, J. Teh, Yuan-Chih Lin, C. Hsu","doi":"10.1109/WiPDAAsia.2019.8760330","DOIUrl":"https://doi.org/10.1109/WiPDAAsia.2019.8760330","url":null,"abstract":"We introduce a novel DC-AC system to interface the battery power to emerging load such as household appliances. Conventional methods, in which using non-isolated cascade DC-DC converters as a front-end of the DC-AC system can achieve high voltage gain but compromise efficiency, while the situation of employing isolated converters is just opposite. To combine the merits of these two type converters and overcome the disadvantages, a novel isolated push-pull LLC resonant DC-DC converter is developed. To cover the wide input voltage range in battery-powered systems, this converter, besides possessing all advantages of conventional LLC converters, the secondary-side resonant operation emerges as a higher efficiency can be achieved for the low battery capacity condition. Then the low side gate driving merit of the conventional push-pull converter endows simplification of circuit and ability of cost-effective. Therefore, the proposed front-end converter is very suitable for step-up conversion in DC-AC systems. Furthermore, a full-bridge sinusoidal pulse-width modulated (SPWM) inverter is also implemented as a back-end stage to produce the pure sinusoidal AC waveform with low total harmonic distortion (THD). The operation principle and analysis of the proposed system are presented and the validity and applicability are also verified by a power rating of 500W hardware prototype.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"329 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122844456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxide Breakdown Reliability of SiC MOSFET SiC MOSFET的氧化物击穿可靠性

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760324

C. Yen, H. Lee, C. Hung, C. Y. Lee, L. Lee, F. Hsu, K. Chu

引用次数: 13

Study and Analysis of Robust Control Technology and Wide Bandgap Power Device-Based Power Converters 鲁棒控制技术及基于宽带隙功率器件的功率变换器的研究与分析

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760334

E. Chang, Chenxi Meng

引用次数: 0