Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI:10.1109/WiPDAAsia.2019.8760307

Yi-nan Zhong, Y. Hsin

引用次数: 1

Abstract

In this paper, the performance of AlGaN/GaN HEMTs with different gate-to-source length (LGS) and with a fixed distance of drain-to-source (LDS) is presented. The increase in LGS makes the source resistance (RS) increase. In general, the larger the resistance, the better the linearity and stability in the power amplifier, thereby these devices were used to study and compare the device characteristics. According to output 3rd order intercept (OIP3), there is no linear trend in the linearity with related to the LGS and RS. The optimal layout for the different geometry in this study is the device with gate width of 250 μm and LGS of 1.325 μm.

查看原文本刊更多论文

不同栅源长度AlGaN/GaN hemt的线性关系

本文研究了具有不同栅源长度(LGS)和固定漏源距离(LDS)的AlGaN/GaN hemt的性能。LGS的增大使源电阻(RS)增大。一般来说，电阻越大，功率放大器的线性度和稳定性越好，因此使用这些器件来研究和比较器件的特性。从输出三阶截距(OIP3)可以看出，与LGS和RS相关的线性关系不存在线性趋势，对于不同几何形状的器件，本研究的最佳布局为栅极宽度为250 μm, LGS为1.325 μm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

自引率

0.00%

发文量