2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)最新文献

A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET SiC MOSFET的温度相关PSpice短路模型

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-23 DOI: 10.1109/WiPDAAsia.2019.8760311

Xingran Zhao, Hong Li, Yuting Wang, Zhe Zhou, K. Sun, Zhengming Zhao

{"title":"A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET","authors":"Xingran Zhao, Hong Li, Yuting Wang, Zhe Zhou, K. Sun, Zhengming Zhao","doi":"10.1109/WiPDAAsia.2019.8760311","DOIUrl":"https://doi.org/10.1109/WiPDAAsia.2019.8760311","url":null,"abstract":"A temperature-dependent PSpice short-circuit model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) is proposed in this paper, which can be used to study the short-circuit characteristic of SiC MOSFET by simulation. Based on the non-segmented model, the normal working model of SiC MOSFET is established first. The correctness of the normal working model is verified by comparing the simulation results with the characteristic curves in the SiC MOSFET’s datasheet. Then the thermal network model of case-to-junction is introduced to describe the changes of junction temperature during short-circuit condition, and the short-circuit current of SiC MOSFET is further fitted based on the junction temperature. Finally, the proposed temperature-dependent short-circuit model of SiC MOSFET is simulated in PSpice, and the simulation results show the effectiveness of the proposed model, which can work correctly under normal working condition and short-circuit condition. Furthermore, the correctness of the proposed short-circuit model is verified by comparing the simulation results with the experimental results provided in the literature. Therefore, the proposed model in this paper make it possible that designing and analyzing the SiC MOSFET short-circuit characteristics in simulation.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129600580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation 软开关下基准宽禁带功率晶体管热损耗测量精度分析

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-23 DOI: 10.1109/WiPDAAsia.2019.8760332

Dominik Koch, Samuel Araujo, I. Kallfass

引用次数: 9

Simultaneous Formation of Ni/Ti/Al/Ag Ohmic Contacts to both p- and n-type for 4H-SiC RSD 在4H-SiC RSD中同时形成Ni/Ti/Al/Ag的p型和n型欧姆接触

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-23 DOI: 10.1109/WiPDAAsia.2019.8760317

Xiaoxue Yan, Lin Liang, Ludan Zhang

{"title":"Simultaneous Formation of Ni/Ti/Al/Ag Ohmic Contacts to both p- and n-type for 4H-SiC RSD","authors":"Xiaoxue Yan, Lin Liang, Ludan Zhang","doi":"10.1109/WiPDAAsia.2019.8760317","DOIUrl":"https://doi.org/10.1109/WiPDAAsia.2019.8760317","url":null,"abstract":"Semiconductor pulsed power switch SiC RSD (reversely switched dynistor) has difficulty in the preparation of its ohmic contact due to the nature of the material itself and the structure of alternating P+ and N+ regions at the anode. In order to solve the problem, an ohmic contact scheme considering both p-type and n-type semiconductors is proposed in this paper, and the effects of some process conditions on the ohmic contact during the manufacture are discussed, too. The ohmic contact characteristics can be evaluated by the contact resistance ρc which is measured by C-TLM method. Experimental results show that the ohmic contact of both p-type and n-type can be formed when the metal is Ni/Ti/Al/Ag (80/30/80/500 nm). The corresponding annealing condition is RTA at 1050°C in N2 atmosphere for 5 minutes. SiO2 protection before high temperature annealing can reduce ρc, while dry-wet oxidation before metal deposition has little improvement in ohmic contacts. The relationships between RMS and ρc are summarized in the end that neither too smooth nor too rough surface is good for the ohmic contacts.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121324179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single Phase AC-AC Solid State Transformer based on Single Conversion Stage 基于单级转换的单相交流-交流固态变压器

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-23 DOI: 10.1109/WiPDAAsia.2019.8760310

A. Rahman, Sheng-Kai Chen, H. Chiu

{"title":"Single Phase AC-AC Solid State Transformer based on Single Conversion Stage","authors":"A. Rahman, Sheng-Kai Chen, H. Chiu","doi":"10.1109/WiPDAAsia.2019.8760310","DOIUrl":"https://doi.org/10.1109/WiPDAAsia.2019.8760310","url":null,"abstract":"Single phase solid state transformer (SST) has received great attention among researchers and engineers as an effort to replace the standard 50/60Hz low frequency (LF) transformer in certain applications where bulky and heavy low frequency transformer become prohibitive. The main challenge in SST research is how to achieve comparable efficiency (>98%) and high reliability of the traditional LF transformer. Based on that target, a single stage single phase SST was developed with separate high frequency converter link (HF-Link) and low frequency commutation bridge (LF-Bridge). The HF-Link was realized using full bridge SRC converter and the LF-Bridge was realized with two full bridges to perform the bipolar to unipolar folding and the unipolar to bipolar unfolding. In this paper, our experience in developing single phase SST will be presented along with the lesson learned during the development. A converter structure based on separate high frequency converter link and low frequency commutation bridge was studied, tested, and analyzed. From the experimental measurement, the prototype converter was able to provide clean sine wave power to the load with conversion efficiency at 94.65% at the 3kW maximum load.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125321654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

WiPDA Asia 2019 Greetings from General Chair 2019年WiPDA亚洲会议主席的问候

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/wipdaasia.2019.8760320

引用次数: 0

Current Collapse Suppression in AlGaN/GaN HEMTs Using Silicon Substrate Removal Technique 利用硅衬底去除技术抑制AlGaN/GaN hemt中的电流崩溃

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760325

Yueh-Ting Chen, Jian-jang Huang

引用次数: 2

Experimental Verification of DC to Single-phase AC Converter with Power Decoupling Capability using 1.2 kV SiC-MOSFET Module 利用1.2 kV SiC-MOSFET模块实现具有功率去耦能力的直流-单相交流变换器的实验验证

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760328

Hiroki Watanabe, J. Itoh, A. Iwabuchi

引用次数: 0

Synchronous Rectification Method for High Frequency CLLC Resonant Cnverter 高频CLLC谐振变换器的同步整流方法

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760308

Hwa-Pyeong Park, Mina Kim, Hyun-Jun Choi, Jeehoon Jung, S. Cheon, C. Lee

引用次数: 3

Study on the Imbalanced Voltage of Series-connected Active Power Semiconductor Devices in Power Conversion Systems 功率转换系统中串联有源功率半导体器件电压不平衡的研究

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760316

Hongjing Zhang, J. Imaoka, M. Noah, Y. Ishikura, Masayoshi Yamamoto

引用次数: 2

GaN Based DC-DC Converter for 48 V Automotive Applications 基于GaN的48 V汽车DC-DC变换器

2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2019-05-01 DOI: 10.1109/WiPDAAsia.2019.8760327

E. Jones, M. D. de Rooij, S. Biswas

引用次数: 8