{"title":"Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation","authors":"Dominik Koch, Samuel Araujo, I. Kallfass","doi":"10.1109/WiPDAAsia.2019.8760332","DOIUrl":null,"url":null,"abstract":"A detailed accuracy analysis of calorimetric measurements for benchmarking wide bandgap power transistors under soft-switching operation is presented. This paper will present a deeper insight into this method and propose enhancements to ensure higher accuracy of the extracted switching energy by evaluating the whole measurement and calculation chain. Furthermore, the confidence level for the switching energy can be derived for each measurement and the most critical errors of the presented measurement chain can be identified. A benchmarking of the soft-switching energies of different SiC and GaN devices is presented, compared to other work and discussed.","PeriodicalId":302736,"journal":{"name":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"380 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDAAsia.2019.8760332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A detailed accuracy analysis of calorimetric measurements for benchmarking wide bandgap power transistors under soft-switching operation is presented. This paper will present a deeper insight into this method and propose enhancements to ensure higher accuracy of the extracted switching energy by evaluating the whole measurement and calculation chain. Furthermore, the confidence level for the switching energy can be derived for each measurement and the most critical errors of the presented measurement chain can be identified. A benchmarking of the soft-switching energies of different SiC and GaN devices is presented, compared to other work and discussed.