IEEE Transactions on Parts, Materials and Packaging最新文献

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Heat Transfer by Natural Convection with Fluorocarbon Gases 用氟碳气体进行自然对流传热
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-12-01 DOI: 10.1109/TPMP.1970.1136270
D. Hanesian, R. Kalish
{"title":"Heat Transfer by Natural Convection with Fluorocarbon Gases","authors":"D. Hanesian, R. Kalish","doi":"10.1109/TPMP.1970.1136270","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136270","url":null,"abstract":"","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Relation of the Particle Size of RuO 2 in Cermet Resistor Inks to the Electrical Properties of Fired Resistors 金属陶瓷电阻器油墨中氧化钌的粒径与烧结电阻器电性能的关系
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-12-01 DOI: 10.1109/TPMP.1970.1136265
L. Brady
{"title":"Relation of the Particle Size of RuO 2 in Cermet Resistor Inks to the Electrical Properties of Fired Resistors","authors":"L. Brady","doi":"10.1109/TPMP.1970.1136265","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136265","url":null,"abstract":"It has been reported that the electrical properties of RuO 2 -.based thick-film resistors are dependent on the particle size of the Ru0 2 in the inks used to make the resistors. In order to explain this dependence, a mathematical analysis was made to see if the \"mixing rule\" equations used to blend end-member cermet resistor inks to give inks with intermediate resistance values could be applied. This analysis led to the conclusion that these mixing rules cannot be used to explain file changes in resistence and the temperature coefficient of resistance (TCR) that occur as the particle size of the RuO 2 in the inks is varied. It was found, however, that alterations in the elemental resistor structure associated with the variations in the particle size of the oxide could be used to explain the changes observed.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"160 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120873594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Calculation of Thermally Induced Mechanical Stresses in Encapsulated Assemblies 封装组件中热致机械应力的计算
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-12-01 DOI: 10.1109/TPMP.1970.1136267
E. Baker
{"title":"Calculation of Thermally Induced Mechanical Stresses in Encapsulated Assemblies","authors":"E. Baker","doi":"10.1109/TPMP.1970.1136267","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136267","url":null,"abstract":"A procedure is given for the calculation of thermally induced mechanical stresses in electronic assemblies. This procedure can be used to calculate both elastic and plastic deformation during thermal cycling of multielement assemblies with complex configurations and heterogeneous material properties. It will give the strain (or stress) in each element at any temperature in the thermal cycle as the element undergoes elastic deformation, captive plastic deformation, or thermal ratchet. Several encapsulated systems were analyzed to demonstrate the applicability of the calculations to real assemblies. In one example, it was demonstrated that encapsulated electronic systems are subject to thermal ratchet. For the environmental temperatures used, it was shown that the assembly would grow (or ratchet) on each thermal cycle until one of the elements broke. It was found that thermal ratchet could be avoided by either decreasing or increasing the thickness of the encapsulant. In another example, a foamed cordwood module was analyzed to determine the effect of lead length on the stresses developed in a glass-cased component. It was shown that a small increase in the length of the component's leads significantly increased the stresses in the component.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121184715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Voltage Hash in Low-Current DC Vacuum Arcs 低电流直流真空电弧中的电压散列
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-12-01 DOI: 10.1109/TPMP.1970.1136269
M. Hoyaux, C. Kimblin
{"title":"Voltage Hash in Low-Current DC Vacuum Arcs","authors":"M. Hoyaux, C. Kimblin","doi":"10.1109/TPMP.1970.1136269","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136269","url":null,"abstract":"The nature and mechanism of the high-voltage pulses in the anode region of copper-vapor arcs have been investigated. Arcs are drawn between a 1.3-cm-diameter anode and a 5-cm-diameter cathode in the dc range of 30-400 A. Prior to anode spot formation and at constant current, the arc voltage exhibits HF pulses superposed on the dc voltage. The amplitude and frequency of repetition (= 500 kHz) of these pulses is highly erratic, and the total instability is evidenced as voltage hash. The hash amplitude increase with both arc current and contact spacing and, at 2.5 cm, varies from several tens of volts at 30 A to several hundreds of volts at 400 A. The hash is attributed to fluctuations in vapor and plasma density in the anode region. Although these fluctuations appear unrelated to the gross motion of the cathode spots, streak photographs indicate a time-variant cathode evaporation that may contribute to the hash phenomenon. A second contributory mechanism is suggested from experience of hash in the anode region of fluorescent lamps, and involves quasi-periodic emission from the anode.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124070002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Vibration Control of Printed-Circuit Boards in a Dynamic Environment 动态环境下印刷电路板的振动控制
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-09-01 DOI: 10.1109/TPMP.1970.1136264
E. Veilleux
{"title":"Vibration Control of Printed-Circuit Boards in a Dynamic Environment","authors":"E. Veilleux","doi":"10.1109/TPMP.1970.1136264","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136264","url":null,"abstract":"Controlling destructive resonant amplitude of printedcircuit boards in electronic systems is a common problem. This paper describes various methods available for reducing these amplitudes and presents data to show the effectiveness of each method when compared with a standard printed-circuit board.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125673806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Energy Loss in Nonpolar State Polycrystalline Barium Titanate 非极性态多晶钛酸钡的能量损失
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-09-01 DOI: 10.1109/TPMP.1970.1136261
G. Marks, D. Skaar
{"title":"Energy Loss in Nonpolar State Polycrystalline Barium Titanate","authors":"G. Marks, D. Skaar","doi":"10.1109/TPMP.1970.1136261","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136261","url":null,"abstract":"Two procedures, based on the Lissajous figure as observed on the screen of an oscilloscope, are described for the determination of electrical energy loss in dielectrics, particularly at higher temperatures. These procedures were employed to determine the losses in nonpolar state ceramic barium titanate within the temperature region 150°-550°C and over the frequency range 20 Hz50 kHz. The first procedure was used at a fixed frequency of 60 Hz and at relatively high field strengths. It was found that the loss L in microcalories per gram per cycle at fixed temperature and variable field strength E is given by the relation L = a 2 E2 + a4E4 where a 2 and a 4 are constants. At low field strengths the second term can be neglected. Coefficients a 2 and a 4 vary exponentially with the reciprocal of the Kelvin temperature. Using the second procedure at comparatively low field strengths for loss determination, interfacial polarization was observed from 200° to 400°C as shown by a sharp rise in the index e\" with decrease in frequency and by an inflection in each e\" versus f curve at constant temperature. It was found that the Maxwell-Wagner equation for a two-layer condenser describes the phenomenon provided that the exponent of f is 0.89 rather than unity, the concordance between calculated and observed values of e\" then being quite good.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114965452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measuring Integrated Electronic Device Geometry Via HF-NO-H 2 0 Vapor Stain 利用hf - no - h20蒸汽染色法测量集成电子器件几何形状
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-09-01 DOI: 10.1109/TPMP.1970.1136263
W. Glendinning, W. Pharo
{"title":"Measuring Integrated Electronic Device Geometry Via HF-NO-H 2 0 Vapor Stain","authors":"W. Glendinning, W. Pharo","doi":"10.1109/TPMP.1970.1136263","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136263","url":null,"abstract":"The p-n junction geometry of active, passive, and integrated silicon devices is customarily determined by various liquid-stain and angle-lap methods. In fact, it has been necessary to develop many liquid-staining methods since the simultaneous evaluation of even simple combinations of p-n, n+n and p+p boundaries has not been possible within a single stain cycle. A novel vapor-staining method using nitrogen oxide (NO 2 or NO) and hydrogen fluoride overcomes shortcomings in such simultaneous boundary delineations. The simple vapor process performed in a fraction of a minute is directly and clearly observable with lowpower optics enabling exact control of the stain-pattern contrast to be obtained. Numerous epitaxial layer thicknesses and diffused junction depths have been measured easily via the vapor stain with an accuracy of better than 0.05 micron. The stain-process details and the results of measurements made on n-p-n and p-n-p transistor devices are presented.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121290785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Varying Gap-Immersion Method for Measuring Dielectric Constant and Loss Tangent Angle 测量介电常数和损耗正切角的变间隙浸没法
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-09-01 DOI: 10.1109/TPMP.1970.1136260
A. Kakimoto, B. Ichijō
{"title":"Varying Gap-Immersion Method for Measuring Dielectric Constant and Loss Tangent Angle","authors":"A. Kakimoto, B. Ichijō","doi":"10.1109/TPMP.1970.1136260","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136260","url":null,"abstract":"A method is described for measuring the dielectric constant and the loss tangent angle of sheet specimens at frequencies above 1 MHz without requiring the measurements of thickness. Through the combination of the gap variation method [1]-[5] and the immersion method [6], [9], the main source of error in the gapvariation method, i.e., the thickness measurement of the specimen, is avoided. Also avoided are the possible sources of error encountered in high-frequency measurements using the immersion method such as the series resistances of the electrodes, of the capacitors used in the measuring circuit, and of the lead wire connecting the electrode and the circuit. This method is easy to use and takes little time as compared with the conventional methods. The accuracy is expected to approach that of the low-frequency immersion method.","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121624926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Who's Who in G-PMP G-PMP中的谁是谁
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-09-01 DOI: 10.1109/TPMP.1970.1136262
C. Morehouse
{"title":"Who's Who in G-PMP","authors":"C. Morehouse","doi":"10.1109/TPMP.1970.1136262","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136262","url":null,"abstract":"","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"22 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129345160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Who's Who in G-PMP G-PMP中的谁是谁
IEEE Transactions on Parts, Materials and Packaging Pub Date : 1970-06-01 DOI: 10.1109/TPMP.1970.1136253
M. Tenzer
{"title":"Who's Who in G-PMP","authors":"M. Tenzer","doi":"10.1109/TPMP.1970.1136253","DOIUrl":"https://doi.org/10.1109/TPMP.1970.1136253","url":null,"abstract":"","PeriodicalId":292168,"journal":{"name":"IEEE Transactions on Parts, Materials and Packaging","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1970-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129594039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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