发布求助
文献互助 智能选刊 最新文献

82nd ARFTG Microwave Measurement Conference最新文献

筛选
英文 中文
Millimeter wave on-wafer measurement of yeast cell suspension using a CPW test fixture in LCP technology 使用LCP技术中的CPW测试夹具对酵母细胞悬浮液进行毫米波片上测量
82nd ARFTG Microwave Measurement Conference Pub Date : 2013-11-01 DOI: 10.1109/ARFTG-2.2013.6737355
S. Liu, I. Ocket, B. Nauwelaers, D. Schreurs
{"title":"Millimeter wave on-wafer measurement of yeast cell suspension using a CPW test fixture in LCP technology","authors":"S. Liu, I. Ocket, B. Nauwelaers, D. Schreurs","doi":"10.1109/ARFTG-2.2013.6737355","DOIUrl":"https://doi.org/10.1109/ARFTG-2.2013.6737355","url":null,"abstract":"This paper deals with the measurement of cell suspensions at millimeter wave frequencies between 30 GHz and 110 GHz using a CPW test fixture and an on-wafer network analyzer set-up. The measurement results show that yeast cell suspension with concentration as low as 4 million cells/ml or 4 cells/nl can be distinguished from water by their dielectric constants at millimeter wave frequencies. High contrast in the imaginary part of the permittivity is found for cell concentrations from 4 million cells/ml to 4 billion cells/ml.","PeriodicalId":290319,"journal":{"name":"82nd ARFTG Microwave Measurement Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132867320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Feasibility of an IFM-based system for broadband tunable gain slope equalization 基于ifm的宽带可调增益斜率均衡系统的可行性
82nd ARFTG Microwave Measurement Conference Pub Date : 2013-11-01 DOI: 10.1109/ARFTG-2.2013.6737346
Erick Maxwell, Marc Warrior, A. Craven
{"title":"Feasibility of an IFM-based system for broadband tunable gain slope equalization","authors":"Erick Maxwell, Marc Warrior, A. Craven","doi":"10.1109/ARFTG-2.2013.6737346","DOIUrl":"https://doi.org/10.1109/ARFTG-2.2013.6737346","url":null,"abstract":"Broadband microwave receivers with electronic warfare applications often exhibit frequency variations that degrade performance. Most notably, a negative gain slope is inherent to an RF/Microwave receiver chain, in-part, because of attenuation that results from frequency-dependent ohmic losses in the dielectric. We present a novel approach to tunable gain slope equalization that solves this problem by taking advantage of the existing IFM capability in an electronic warfare receiver. The demonstrated 0.4-2.4 GHz system circumvents problems associated with impedance mismatch, and offers an efficient means to tune the gain slope. In this feasibility assessment, we discuss the theory, measurement results, and challenges associated with practical IFM-based gain slope equalization. We also extend this discussion into an evaluation of the challenges of increasing the system's unambiguous bandwidth.","PeriodicalId":290319,"journal":{"name":"82nd ARFTG Microwave Measurement Conference","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124650398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low frequency noise in chemical vapor deposited MoS2 化学气相沉积二硫化钼中的低频噪声
82nd ARFTG Microwave Measurement Conference Pub Date : 2013-10-24 DOI: 10.1109/ARFTG-2.2013.6737358
Yuji Wang, Xinhang Luo, Ningjiao Zhang, M. Laskar, Lu Ma, Yiying Wu, S. Rajan, W. Lu
{"title":"Low frequency noise in chemical vapor deposited MoS2","authors":"Yuji Wang, Xinhang Luo, Ningjiao Zhang, M. Laskar, Lu Ma, Yiying Wu, S. Rajan, W. Lu","doi":"10.1109/ARFTG-2.2013.6737358","DOIUrl":"https://doi.org/10.1109/ARFTG-2.2013.6737358","url":null,"abstract":"Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge's parameter ranging between 1.44×10-3 and 3.51×10-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS2 devices than reported single-layer MoS2 FET. The extracted Hooge's parameter is one order of magnitude lower than CVD-grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.","PeriodicalId":290319,"journal":{"name":"82nd ARFTG Microwave Measurement Conference","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124100337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信