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2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)最新文献

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InAs Islands Formation on the InP(001) During High- Temperature Annealing in an As Flux As熔剂高温退火过程中InP(001)上InAs岛的形成
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507627
D. Kolosovsky, D. Dmitriev, T. Gavrilova, A. Toropov, A. Kozhukhov, K. Zhuravlev
{"title":"InAs Islands Formation on the InP(001) During High- Temperature Annealing in an As Flux","authors":"D. Kolosovsky, D. Dmitriev, T. Gavrilova, A. Toropov, A. Kozhukhov, K. Zhuravlev","doi":"10.1109/EDM52169.2021.9507627","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507627","url":null,"abstract":"The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the $[1 overline{1} 0]$ direction. The height and density of InAs areas increases with an increase in the annealing temperature.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122433430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Voltage Picosecond Range Sharpening Diode Commutating “Long” Pulses: Double Avalanche Injection vs. Plasma Extraction 高电压皮秒范围锐化二极管换向“长”脉冲:双雪崩注入与等离子体提取
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507662
M. Ivanov, P. Rodin
{"title":"High-Voltage Picosecond Range Sharpening Diode Commutating “Long” Pulses: Double Avalanche Injection vs. Plasma Extraction","authors":"M. Ivanov, P. Rodin","doi":"10.1109/EDM52169.2021.9507662","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507662","url":null,"abstract":"Post-switching dynamics of picosecond range avalanche sharpening diodes is investigated by means of numerical simulations. The sharpening diode exhibits 100-ps switching in the regime of delayed impact ionization breakdown. We consider high-voltage quasi-rectangular pulses of submicrosecond (hundreds of nanoseconds) duration. The focus is on the inner dynamics that follows avalanche switching with 100 ps risetime. Our simulations reveal the prime role of double avalanche injection, in contradiction to the generally accepted concept of the diode blocking capability recovery due to drift extraction of the nonequilibrium electron-hole plasma. Double avalanche injection is capable of supporting the conducting state after avalanche switching but is associated with negative differential conductivity. This causes isothermal current filamentation that develops within several dozen nanoseconds after switching. Therefore, the maximum duration of the commutated pulse is determined by physical phenomena related to current localization in the double avalanche injection regime.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122881022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Solid State Transformer as a Part Electrical Circuit for Data Center Application 固态变压器在数据中心电路中的应用
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507640
A. Sidorov, G. Zinoviev, J. Petzoldt
{"title":"Solid State Transformer as a Part Electrical Circuit for Data Center Application","authors":"A. Sidorov, G. Zinoviev, J. Petzoldt","doi":"10.1109/EDM52169.2021.9507640","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507640","url":null,"abstract":"The aim is to investigate a new solid-state transformer topology as part of a data center power supply chain. The converter is aimed at solving problems: stabilization of the output voltage at a low or high voltage of the supply network; to coordinate the communication of both the highvoltage input with the low-voltage output and the low-voltage input with the high-voltage output. Additional tasks, expanding the intellectual capabilities of the device: compensation of reactive power of other consumers; quality control of electricity consumed from the network; conditioning the quality of the output voltage; correction of the input current shape, setting the desired coefficient of the current shift relative to the voltage. An approach with a variable number of cells is considered. The objective of this research is to study similar SST properties and, as a result, to optimize the characteristics of the power electronic transformer for distribution networks and data center applications.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121452134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Resonant Controllers Design for Frequency-Selective Impedance Controlled DC Microgrids 频率选择阻抗控制直流微电网的谐振控制器设计
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507639
N. A. Sevostyanov, R. L. Gorbunov
{"title":"Resonant Controllers Design for Frequency-Selective Impedance Controlled DC Microgrids","authors":"N. A. Sevostyanov, R. L. Gorbunov","doi":"10.1109/EDM52169.2021.9507639","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507639","url":null,"abstract":"The resonant-type controllers are commonly used in dc microgrids in order to suppress the steady-state ripples of a microgrid's dc bus voltage. As the resonant controllers are prone to cause instability issues and anomalous peaks in closed-loop frequency responses, it is of particular importance to investigate it thoroughly for the frequency-selective impedance controlled (FSIC) dc microgids, where the cascade of the resonant-type controllers is used in control of the interfacing power converters to reduce the bus's impedance at the selected frequencies. In this paper, based on the Nyquist plots analysis results, design of the FSIC resonant controllers is carried out and a step-by-step design procedure is proposed to ensure stability and no impedance peaking nearby the FSIC's frequencies. The proposed design is verified through the experiments.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128490594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Conditions for the Formation of Vertical Nanowires and Crystalline Clusters of GaAs during the Self-Catalyzed Growth 自催化生长过程中砷化镓垂直纳米线和晶簇形成的条件
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507696
P. Zhikharev, A. Nastovjak, N. Shwartz
{"title":"Conditions for the Formation of Vertical Nanowires and Crystalline Clusters of GaAs during the Self-Catalyzed Growth","authors":"P. Zhikharev, A. Nastovjak, N. Shwartz","doi":"10.1109/EDM52169.2021.9507696","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507696","url":null,"abstract":"The formation of GaAs crystallites is observed during the self-catalyzed growth of vertical GaAs nanowires. The conditions necessary for vertical nanowires and nanocrystallites formation were explored using Monte Carlo simulation. The nanostructure growth was carried out on a GaAs (111)B substrate covered with a mask-film, according to the vapor-liquid-solid mechanism. It was shown that the nanostructure shape depends on both the deposition rates of gallium and arsenic and on the mask-film properties. It was demonstrated that an excessively high deposition rate of arsenic leads to the formation of crystallites only, while vertical nanowires are formed at relatively low Ga and As fluxes.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117171572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectromagnetic Phenomena in n-type HgCdTe Heterostructures n型HgCdTe异质结构中的光电磁现象
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507591
V. Kuznetsov, D. Protasov, V. Kostyuchenko, V. Varavin, V. Vasilyev
{"title":"Photoelectromagnetic Phenomena in n-type HgCdTe Heterostructures","authors":"V. Kuznetsov, D. Protasov, V. Kostyuchenko, V. Varavin, V. Vasilyev","doi":"10.1109/EDM52169.2021.9507591","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507591","url":null,"abstract":"The influence of a drift electric field on the photoelectromagnetic (PEM) effect on thin films of n-type mercury cadmium telluride is investigated. It was obtained that the strong magnetoresistance due to two types of electrons (“fast” bulk and “slow” surface electrons) significantly changes the dependences of the PEM effect on the magnetic field. Due to the magnetoresistance, the magnitude of the PEM effect in high magnetic fields is higher than in a zero field with a drift current of more than $1.25 mu mathrm{A}$. At a drift current of $24.76 mu mathrm{A}$, the dependence on the magnetic field of the PEM effect is very similar to the magnetoresistance dependence.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116243164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of the Metric Learning for Security Incident Playbook Recommendation 度量学习在安全事件剧本推荐中的应用
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507632
I. Kraeva, G. Yakhyaeva
{"title":"Application of the Metric Learning for Security Incident Playbook Recommendation","authors":"I. Kraeva, G. Yakhyaeva","doi":"10.1109/EDM52169.2021.9507632","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507632","url":null,"abstract":"The article describes an algorithm for the automated selection of the most relevant playbook for responding to computer security precedents. The proposed approach is based on the methodology of metric learning. During the execution of the algorithm, it analyzes the precedents recorded in the past and the playbooks used for them. A trained neural network maps the entire set of precedents into a vector space, in which precedents with the same playbooks are closer to each other than to precedents with different playbooks. This method does not require the involvement of object domain experts and additional training of the network when expanding the set of precedents or playbooks. The developed approach was tested on real data. Experiments show that the proposed method can be effectively used to playbook's recommendation.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114442534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Pulse Measurements of Samples Frequency-Dependent Devices 频率相关器件样品的脉冲测量
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507620
S. Korobeynikov, V. Loman
{"title":"Pulse Measurements of Samples Frequency-Dependent Devices","authors":"S. Korobeynikov, V. Loman","doi":"10.1109/EDM52169.2021.9507620","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507620","url":null,"abstract":"High-frequency overvoltages of lightning or switching nature are very dangerous for the insulation of transformer windings. One of the promising methods of protection against high-frequency overvoltages is the use of protective equipment operating on the principle of the skin effect. An example of such equipment is a frequency-dependent device. The article describes experiments that comparison the effectiveness of the use of a frequency-dependent device with a round wire and a device with a multilayer flat wire, as well as a comparison with a line trap. The results obtained are analyzed, which confirm the effectiveness of the frequency-dependent device at high frequencies. The insufficient efficiency of a device with a flat multilayer conductor design in comparison with a circular design is shown.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114849959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Three-Phase Grid Interface Converter Control System Design to Limit a DC-side Output Impedance 限制直流侧输出阻抗的三相电网接口变换器控制系统设计
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507600
I. V. Alexandrov, R. L. Gorbunov, O. Nos, Dmitri A. Shtein
{"title":"Three-Phase Grid Interface Converter Control System Design to Limit a DC-side Output Impedance","authors":"I. V. Alexandrov, R. L. Gorbunov, O. Nos, Dmitri A. Shtein","doi":"10.1109/EDM52169.2021.9507600","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507600","url":null,"abstract":"An output impedance of source converters becomes crucial for the stability of a modern power system due to presence of a large number of power converters. In the case of a hybrid power system, not only DC-DC converters but also a grid interface converter must have a limited output impedance at the DC-side. In this paper, the authors implement an output impedance limiting approach for compensators coefficient calculation of a three-phase six switch grid interface converter control system. The mathematical analysis of the converter output impedance is presented and optimal conditions of compensators coefficients for current and voltage loops are obtained. Matlab/Simulink modeling is provided to prove the correctness of the obtained results.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127490436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Laboratory Preparation of Biosensor Based on Silicon Nanowire Field-Effect Transistor for Virus Indication 基于硅纳米线场效应晶体管病毒指示生物传感器的实验室制备
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM) Pub Date : 2021-06-30 DOI: 10.1109/EDM52169.2021.9507649
A. Cheremiskina, V. Generalov, A. Safarov, Dmitriy Shcherbakov, Iuliia A. Merkuleva, G. Buryak
{"title":"Laboratory Preparation of Biosensor Based on Silicon Nanowire Field-Effect Transistor for Virus Indication","authors":"A. Cheremiskina, V. Generalov, A. Safarov, Dmitriy Shcherbakov, Iuliia A. Merkuleva, G. Buryak","doi":"10.1109/EDM52169.2021.9507649","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507649","url":null,"abstract":"In this study, laboratory preparation of the biosensor based on silicon nanowire field-effect transistors (SiNW-FETs) for virus indication was performed. The authors examined a number of decontamination agents for cleaning the surface of SiNW-FETs using solutions such as hydrogen peroxide, sulfuric acid, hydrofluoric acid, ammonium hydroxide. Biosensor surface functionalization for virus indication was performed through the attachment of antibodies by covalent binding using (3-aminopropyl) triethoxysilane and glutaraldehyde as solutions of cross-linkers. It was determined that a mixture of hydrogen peroxide and water is effective for removing contamination, and (3-aminopropyl) triethoxysilane in ethanol is effective for surface modification.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124834614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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