{"title":"GaAs Planar Nanowire Growth on Vicinal GaAs(111)A Substrates","authors":"A. Spirina, N. Shwartz","doi":"10.1109/EDM52169.2021.9507648","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507648","url":null,"abstract":"Using Monte Carlo simulation, the self-catalyzed GaAs planar nanowire growth with a gallium droplet as a catalyst was considered. Planar nanowires were formed by molecular beam epitaxy via the vapor-liquid-solid mechanism. The vicinal GaAs(111)A substrates with a film-mask coverage were used. The planar nanowire formation kinetics was analyzed. For the planar nanowire growth, the arsenic adhesion coefficient and the gallium surface diffusion should be increased on vicinal surfaces, in comparison with singular substrates. The nanowire growth directions are determined by the GaAs crystallography and are limited by vicinal surface steps.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123802215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Baranov, Dmitry B. Kuguchev, Pavel N. Smirnov, V. Popov
{"title":"The Investigation of a Hybrid Cascaded Multilevel Matrix Converter","authors":"E. Baranov, Dmitry B. Kuguchev, Pavel N. Smirnov, V. Popov","doi":"10.1109/EDM52169.2021.9507718","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507718","url":null,"abstract":"This paper investigates a Hybrid Cascaded Multilevel Matrix Converter. The topology represents fully connected matrix switch unit based on bidirectional switches in conjunction with single-phase H-bridge capacitor clamped inverter. The principle of operation bases on geometric summation of the voltages of series-connected converters. The circuit provides voltage increase with required frequency, input/output THD ratios and power factor. In the article basic principles of converter operation and control are described. The simulation is carried out considering conventional and cascaded configurations, the study of THD content in the spectrum of output voltage is provided. The presented graphs and diagrams confirm the functionality and obtained results are discussed in last sections.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129960270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Section 9 History and Prospects for the Informatics and Electronics Development in the Context of Humanitarian Problems of Society Solving","authors":"","doi":"10.1109/edm52169.2021.9507666","DOIUrl":"https://doi.org/10.1109/edm52169.2021.9507666","url":null,"abstract":"","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128449588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Researches for Primary Reference Bioparticle Polarizability Measurement Procedure Development","authors":"Lidiia I. Dmitrieva","doi":"10.1109/EDM52169.2021.9507624","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507624","url":null,"abstract":"The paper contains the results of a study of metrological characteristics of the state primary reference bulk bioparticle polarizability measurement procedure. The procedure was developed as part of research and development project - Improvement of the Master Base of Chemical Analytical Measurements for Metrological Industrial Emission Control Assurance, Obtaining Pure Substances and Materials, Control of Biological Object Characteristics - completed under the contract with the Federal Agency for Technical Regulation and Metrology and intended for validation of biological microparticle polarizability measurement involving other procedures in order to provide metrological support to medical diagnostic systems. Primary reference procedure can be used for determination of metrological characteristics of reference samples in the form of polystyrene particle suspension from 2 to 5 micrometers in radius within the range of 0.1-100 cubic femtometers as well.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128690632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Developing Reflex IDE Kernel with Xtext Framework","authors":"Alena Bastrykina, V. Zyubin, A. Rozov","doi":"10.1109/EDM52169.2021.9507663","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507663","url":null,"abstract":"In this paper, we describe the technology of the process-oriented language Reflex IDE kernel development. The Reflex language, which is being maintained at the Institute of Automation and Electrometry, is a language for cyber-physical systems software specification. In the paper, we assume that the cyber-physical system is a computational core that interacts with the physical world. In the case of Reflex, the computation platform is an industrial PC. Reflex IDE (RIDE) includes a language-based editor, syntax and semantics analyzers as well as an abstract syntax tree (AST) generator, and a class library for working with the generated AST. In this work, we explain our motivation for the research, formulate the requirements for the development, and present the RIDE architecture. We describe the RIDE development process using Eclipse/Xtext tools and its user interface. We also provide an example of extending the Reflex IDE kernel with a code generator for the AVR platform. In the conclusion, we discuss the possibility of using the obtained result to create a web-version of RIDE.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129152950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Ponomarev, D. Rogilo, A. Mironov, D. Sheglov, A. Latyshev
{"title":"Thermal Hysteresis in the Resistance of In2Se3 Film on Si(111) Surface","authors":"S. Ponomarev, D. Rogilo, A. Mironov, D. Sheglov, A. Latyshev","doi":"10.1109/EDM52169.2021.9507592","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507592","url":null,"abstract":"Properties of layered In<inf>2</inf>Se<inf>3</inf> films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3–5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In<inf>2</inf>Se<inf>3</inf> films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In<inf>2</inf>Se<inf>3</inf> phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by ~10<sup>4</sup> times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In<inf>2</inf>Se<inf>3</inf> ⇔ β'-In<inf>2</inf>Se<inf>3</inf> observed previously in the 140–180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774–6782].","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130317151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Section 7 Robotics, Mechatronics, and Automation","authors":"","doi":"10.1109/edm52169.2021.9507566","DOIUrl":"https://doi.org/10.1109/edm52169.2021.9507566","url":null,"abstract":"","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126320264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","authors":"","doi":"10.1109/edm52169.2021","DOIUrl":"https://doi.org/10.1109/edm52169.2021","url":null,"abstract":"","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128082099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Khazhibekov, I. Romanchenko, V. Konev, V. Barmin, Dmitry S. Kokin
{"title":"Simulation of Helical Antenna with a Resistor for Radiating Powerful Microwave Pulses","authors":"R. Khazhibekov, I. Romanchenko, V. Konev, V. Barmin, Dmitry S. Kokin","doi":"10.1109/EDM52169.2021.9507651","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507651","url":null,"abstract":"The paper proposes the design of a helical antenna in a potting compound with a connected resistor at the end. It is shown that the presented variant of resistor connection allows us to achieve an acceptable reflection coefficient at low frequencies. The optimal resistance value of the resistor is obtained by parametric optimization using the “trust region framework” method. The use of the compound instead of vacuum oil allows us to get small dimensions of the antenna, ease of operation and high dielectric strength. By using electrodynamic analysis, radiation patterns for vertical and horizontal polarizations, time dependences of the electric field strength and effective potential, and frequency dependences of the reflection coefficient were obtained. Simulation and optimization results were obtained in CST MWS software.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125470417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Resonant Cavity Second Order Perturbation by Moving Medium with Stationary Domain","authors":"K. Zeyde","doi":"10.1109/EDM52169.2021.9507686","DOIUrl":"https://doi.org/10.1109/EDM52169.2021.9507686","url":null,"abstract":"In this work, we carry out a theoretical study and formulate a novel specific problem within the boundaries of the resonant cavity perturbation theory at the microwave. In the present case, we consider the possibility of taking into account the second-order perturbation, which is caused by the characteristic motion of the object in the resonant cavity while keeping the set of coordinates occupied by it unchanged (as it called, stationary domain). In our formulation, the stationary object is the first order of perturbation, and the perturbation caused by the movement of the object is the first order of the object's perturbation, but the second-order of the cavity perturbation, in its turn. We consider two types of motion that satisfy the stationary domain requirement: axial motion of a continuous medium along with the circular cylinder and the rotation of a circular cylinder. In both cases, the second-order perturbation is described through the appearance of weakly bianisotropic properties of the object's medium. The detection of these effects (which have a low magnitude) turns out to be very useful in conducting non-contact diagnostics of the state of the object. In this article, we are describing a separate study on the possibility of using the main provisions to create novel types of electromagnetic flow meters for liquids and gases.","PeriodicalId":281783,"journal":{"name":"2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127563063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}