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Insulated-Gate Integrated III-Nitride RF Switches 绝缘栅集成iii -氮化物射频开关
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062470
R. Gaska, J. Yang, D. Billingsley, B. Khan, G. Simin, H. Y. Wong, N. Braga, X. Hu, J. Deng, M. Shur, R. Mickevicius
{"title":"Insulated-Gate Integrated III-Nitride RF Switches","authors":"R. Gaska, J. Yang, D. Billingsley, B. Khan, G. Simin, H. Y. Wong, N. Braga, X. Hu, J. Deng, M. Shur, R. Mickevicius","doi":"10.1109/CSICS.2011.6062470","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062470","url":null,"abstract":"Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129632854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pervasive Modeling in InP HBT Technology Development InP HBT技术开发中的普适建模
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062467
J. Li, T. Hussain, D. Hitko, M. Sokolich
{"title":"Pervasive Modeling in InP HBT Technology Development","authors":"J. Li, T. Hussain, D. Hitko, M. Sokolich","doi":"10.1109/CSICS.2011.6062467","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062467","url":null,"abstract":"With InP HBT technologies rapidly scaling into the deep submicron regime and the rise of new heterogeneously integrated technologies, the ability to model InP HBTs from device concept to device development and on through to IC production has grown significantly. This work highlights the key modeling challenges for InP HBTs and highlights the critical role modeling plays in the technology development cycle.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129020461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A W-Band x12 Frequency Multiplier MMIC in Waveguide Package Using Quartz and Ceramic Transitions 使用石英和陶瓷转换的波导封装中的w波段x12倍频MMIC
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062475
R. Weber, A. Tessmann, M. Zink, M. Kuri, I. Kallfass, H. Stulz, M. Riessle, H. Massler, T. Maier, A. Leuther, M. Schlechtweg
{"title":"A W-Band x12 Frequency Multiplier MMIC in Waveguide Package Using Quartz and Ceramic Transitions","authors":"R. Weber, A. Tessmann, M. Zink, M. Kuri, I. Kallfass, H. Stulz, M. Riessle, H. Massler, T. Maier, A. Leuther, M. Schlechtweg","doi":"10.1109/CSICS.2011.6062475","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062475","url":null,"abstract":"This paper describes a single-chip W-band frequency multiplier MMIC in a waveguide package. The multiplication factor by 12 has been obtained with a doubler, tripler and doubler chain. The MMIC has been realized in a 100 nm metamorphic HEMT technology. It has been packaged in a split-block module using a high precision 50 µm thick quartz transition for the W-band output and a low cost ceramic transition on the input. A power supply board, embedded in the module, provides six different voltages to the MMIC. The packaged frequency multiplier achieves an output power of -0.8 dBm, a conversion gain of 0.2 dB and a 3-dB bandwidth of 16 GHz from 86 to 102 GHz with a suppression of the unwanted harmonics of more than 25.5 dBc. The phase-noise of the output signal is not affected by the multiplier circuit.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128019159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A 220-225.9 GHz InP HBT Single-Chip PLL 一个220-225.9 GHz InP HBT单片锁相环
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062495
M. Seo, A. Young, M. Urteaga, Z. Griffith, M. Rodwell, M. Choe, M. Field
{"title":"A 220-225.9 GHz InP HBT Single-Chip PLL","authors":"M. Seo, A. Young, M. Urteaga, Z. Griffith, M. Rodwell, M. Choe, M. Field","doi":"10.1109/CSICS.2011.6062495","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062495","url":null,"abstract":"We present a 220 GHz fundamental PLL, based on a 220 GHz VCO, 2:1 dynamic frequency divider, fifth-order sub-harmonic phase detector, active loop filter, and output amplifier, fabricated in an InP HBT technology. The measured PLL locking range was 220.0 to 225.9 GHz, with -83 dBc/Hz of phase noise at a 100 KHz offset, while consuming 465.3 mW. The PLL occupies 1.1 mm2 including pads.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123758542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs 用45纳米CMOS场效应管实现的q波段放大器
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062465
S. Pornpromlikit, H. Dabag, B. Hanafi, Joohwa Kim, L. Larson, J. Buckwalter, P. Asbeck
{"title":"A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs","authors":"S. Pornpromlikit, H. Dabag, B. Hanafi, Joohwa Kim, L. Larson, J. Buckwalter, P. Asbeck","doi":"10.1109/CSICS.2011.6062465","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062465","url":null,"abstract":"A stacked FET, single-stage 45-GHz (Q-band) CMOS power amplifier (PA) is presented. The design stacked three FETs to avoid breakdown while allowing a high supply voltage. The IC was implemented in a 45-nm CMOS SOI process. The saturated output power exceeds 18 dBm from a 4-V supply. Integrated shielded coplanar waveguide (CPW) transmission lines as well as metal finger capacitors were used for input and output matching. The amplifier occupies an area of 450x500 im² including pads, while achieving a maximum power-added-efficiency (PAE) above 20%.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114061920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 53
Applications of SOI Technologies to Communication SOI技术在通信中的应用
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062437
J. Plouchart
{"title":"Applications of SOI Technologies to Communication","authors":"J. Plouchart","doi":"10.1109/CSICS.2011.6062437","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062437","url":null,"abstract":"This paper presents an overview of emerging SOI technologies and their application to communication ICs. The unique properties of Si and SiO2, coupled with the broad range of achievable SiO2 film thicknesses, allow tuning of existing devices and the design of new devices targeting RF, high-speed wire line, and photonic communication applications. By using high-resistivity Si substrates, it becomes possible to realize inductors with Q as high as 50 as well as high-power RF switches. Record SOI NFET fT of 485GHz and fMAX of 430GHz have been measured, enabling the design of a broad range of high performance circuits, including 100GHz CML dividers, >100 GHz LC-VCOs, and 16Gb/s 8-port core back-plane transceivers. Finally, due to the large difference in refractive index between Si and SiO2, SOI technology allows the efficient design of photonic devices and circuits.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114137896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Advanced Millimeter-Wave Multifunction Systems and the Implications for Semiconductor Technology 先进毫米波多功能系统及其对半导体技术的影响
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/csics.2011.6062452
H. Wallace
{"title":"Advanced Millimeter-Wave Multifunction Systems and the Implications for Semiconductor Technology","authors":"H. Wallace","doi":"10.1109/csics.2011.6062452","DOIUrl":"https://doi.org/10.1109/csics.2011.6062452","url":null,"abstract":"As military combat platforms take on more challenging roles and missions, their need for advanced communications and sensors for both survivability and lethality has increased. Unfortunately the size, weight, and power (SWAP) available to accommodate these new capabilities has not grown proportionately, nor is it likely to. Many of these new capabilities are required to operate in the radio frequency (RF) spectrum as the need to operate in degraded visual environments increases and in order to reduce antenna sizes and increase available bandwidth, the millimeter-wave (MMW) portion of the spectrum is being examined to address these needs. DARPA has recently started a program in multifunction RF systems to address these needed capabilities while also addressing SWAP through the use of common apertures and exciter/receiver technology. This presentation will discuss how this need for a millimeter wave (MMW) multifunction system may influence our investment strategy in MMW components and ICs to enhance functionality and reduce cost while maintaining performance.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128594088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Identification of Pre-Catastrophic Failure Mechanisms in High Power GaN HEMT 大功率GaN HEMT灾难性前失效机制的识别
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062457
B. Huebschman, F. Crowne, A. Darwish, E. Viveiros, K. Kingkeo, N. Goldsman
{"title":"Identification of Pre-Catastrophic Failure Mechanisms in High Power GaN HEMT","authors":"B. Huebschman, F. Crowne, A. Darwish, E. Viveiros, K. Kingkeo, N. Goldsman","doi":"10.1109/CSICS.2011.6062457","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062457","url":null,"abstract":"Abstract. The research describes an investigation into an observed phenomenon believed to be correlated with catastrophic device failure cause by the breakdown in the gate structure in high power, high frequency GaN HEMTs. Several devices that were stressed on an elevated temperature extended reliability test station showed significant changes in gate current prior to catastrophic failure. In an effort to electrically examine the devices during the breakdown process, similar devices were stressed on wafer. Detailed measurements were performed on the devices at regular intervals. On several devices, the behavior of interest was reproduced. Of the periodic measurements performed, a gate current sweep provided the greatest insight into device operation. Explanations for the observed phenomena are discussed.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133070390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Broadband GaN-Based Switch-Mode Core MMICs with 20 W Output Power Operating at UHF 基于宽带gan的开关模式核心mmic，输出功率为20w，工作在UHF
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062483
S. Maroldt, R. Quay, C. Haupt, O. Ambacher
{"title":"Broadband GaN-Based Switch-Mode Core MMICs with 20 W Output Power Operating at UHF","authors":"S. Maroldt, R. Quay, C. Haupt, O. Ambacher","doi":"10.1109/CSICS.2011.6062483","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062483","url":null,"abstract":"A high power broadband switch-mode core MMIC has been developed for an application in digital switch-mode power amplifiers, e.g., class S, for mobile communications. The three-stage design can be flexibly used at any frequency operating in UHF band up to a maximum digital bit rate of 3 Gbps, equal to a square wave frequency of 1.5 GHz. At 0.9 Gbps a maximum broadband output power of 20.5 W was measured at a drain efficiency of 76% and a power added efficiency of 70%. Controlled by a digital signal with a peak-to-peak amplitude of 3.5 V, a large signal gain of 25.3 dB was achieved.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122204422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs 宽带1至6 GHz 10和20瓦平衡GaN HEMT功率放大器mmic
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI: 10.1109/CSICS.2011.6062482
J. Komiak, R. Lender, K. Chu, P. Chao
{"title":"Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs","authors":"J. Komiak, R. Lender, K. Chu, P. Chao","doi":"10.1109/CSICS.2011.6062482","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062482","url":null,"abstract":"Design and performance of power amplifiers that have established benchmarks for 1 to 6 GHz power are reported. The 6 mm periphery balanced amplifier achieved a P3dB of 14.5 Watts max, 11.1 Watts average, 8.2 Watts min with 46.1 % max, 31.8 % average, 18.1 % min PAE and 9.6 dB max, 8.5 dB average, 7.5 dB min power gain from 1 to 6 GHz. The 8 mm periphery balanced amplifier achieved a P5dB of 26.7 Watts max, 20.6 Watts average, 13.9 Watts min with 44.4 % max, 30.8 % average, 17.8 % min PAE and 10.6 dB max, 10 dB average, 8.4 dB min power gain from 1 to 7 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers [1, 2, 3].","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121471735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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