{"title":"Pervasive Modeling in InP HBT Technology Development","authors":"J. Li, T. Hussain, D. Hitko, M. Sokolich","doi":"10.1109/CSICS.2011.6062467","DOIUrl":null,"url":null,"abstract":"With InP HBT technologies rapidly scaling into the deep submicron regime and the rise of new heterogeneously integrated technologies, the ability to model InP HBTs from device concept to device development and on through to IC production has grown significantly. This work highlights the key modeling challenges for InP HBTs and highlights the critical role modeling plays in the technology development cycle.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
With InP HBT technologies rapidly scaling into the deep submicron regime and the rise of new heterogeneously integrated technologies, the ability to model InP HBTs from device concept to device development and on through to IC production has grown significantly. This work highlights the key modeling challenges for InP HBTs and highlights the critical role modeling plays in the technology development cycle.