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2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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5-GHz gm-boosted transformer cross-coupled current-reused colpitts VCO 5ghz ghz升压变压器交叉耦合电流重用colpit压控振荡器
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-09-27 DOI: 10.1109/RFIT.2016.7578194
Boon-Eu Seow, Ming-Hong Lin, Tzuen-Hsi Huang, H. Chuang
{"title":"5-GHz gm-boosted transformer cross-coupled current-reused colpitts VCO","authors":"Boon-Eu Seow, Ming-Hong Lin, Tzuen-Hsi Huang, H. Chuang","doi":"10.1109/RFIT.2016.7578194","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578194","url":null,"abstract":"This paper presents the design of a 5 GHz gm-boosted transformer cross-coupled current-reused Colpitts voltage-controlled oscillator (VCO). The gm-boosting techniques of transformer cross-coupling is adopted to make the oscillation startup condition much easier with a lower current consumption. This Colpitts VCO is implemented in TSMC 0.18μm 1P6M CMOS process with a chip area of 0.655 mm2. The measured frequency tuning range is from 4.63 to 5.04 GHz, and the phase noise is -116.79 dBc/Hz at 1 MHz offset. The VCO core dissipates 3.74 mW from a 1.8 V supply.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133191646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 290-GHz CMOS heterodyne integrated imager 290 ghz CMOS外差集成成像仪
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-09-27 DOI: 10.1109/RFIT.2016.7578141
Daekeun Yoon, Jungsoo Kim, J. Rieh
{"title":"A 290-GHz CMOS heterodyne integrated imager","authors":"Daekeun Yoon, Jungsoo Kim, J. Rieh","doi":"10.1109/RFIT.2016.7578141","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578141","url":null,"abstract":"A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122286202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
14.4-dB CMOS D-band low-noise amplifier with 22.6-mW power consumption utilizing bias-optimization technique 采用偏置优化技术的14.4 db CMOS d波段低噪声放大器，功耗为22.6 mw
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-09-27 DOI: 10.1109/RFIT.2016.7578218
K. Katayama, K. Takano, S. Amakawa, T. Yoshida, M. Fujishima
{"title":"14.4-dB CMOS D-band low-noise amplifier with 22.6-mW power consumption utilizing bias-optimization technique","authors":"K. Katayama, K. Takano, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/RFIT.2016.7578218","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578218","url":null,"abstract":"In this paper, we propose a method of reducing the number of measurements when a bias optimization of an amplifier is required. We also provide a method of reconstructing an entire model of the amplifier from the reduced number of measurement results. We fabricated an eight-stage D-band low-noise amplifier (LNA) using a 65-nm CMOS technology. Applying these methods to this LNA to maximize a figure of merit, we obtained a 14.4-dB gain with ultra-low power consumption of 22.6 mW.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124543359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Approaches to enhance the performance of SiGe imagers operating near 130 GHz and 300 GHz 提高近130 GHz和300 GHz SiGe成像仪性能的方法
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-09-27 DOI: 10.1109/RFIT.2016.7578163
J. Rieh, Daekeun Yoon, J. Yun, Kiryong Song, Jungsoo Kim, Sooyeon Kim, Junghwan Yoo, M. Kaynak, B. Tillack
{"title":"Approaches to enhance the performance of SiGe imagers operating near 130 GHz and 300 GHz","authors":"J. Rieh, Daekeun Yoon, J. Yun, Kiryong Song, Jungsoo Kim, Sooyeon Kim, Junghwan Yoo, M. Kaynak, B. Tillack","doi":"10.1109/RFIT.2016.7578163","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578163","url":null,"abstract":"A comparison is made on high-frequency SiGe imagers to investigate the performance enhancement with circuit-level approaches: employing a front-end low noise amplifier (LNA) and employing heterodyne topology. Two imagers operating near 130 GHz, one with and the other without an LNA, were compared for the responsivity and the noise equivalent power (NEP). Also, two imagers operating near 300 GHz, one in direct and the other in heterodyne topology, were compared for the same parameters. Inserting a front-end LNA has led to changes in the peak responsivity and the minimum NEP with a factor of 63.5 and 0.011, respectively, near 130 GHz. Employing heterodyne topology for the 300 GHz imager resulted in changes with a factor of 52.8 and 0.18 for the same parameters.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117069089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A sub-2 dB noise-figure 2.4 GHz LNA employing complementary current reuse and transformer coupling 采用互补电流复用和变压器耦合的低于2 dB噪声系数2.4 GHz LNA
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-09-27 DOI: 10.1109/RFIT.2016.7578198
Cheng-Ming Chou, Kuang-Wei Cheng
{"title":"A sub-2 dB noise-figure 2.4 GHz LNA employing complementary current reuse and transformer coupling","authors":"Cheng-Ming Chou, Kuang-Wei Cheng","doi":"10.1109/RFIT.2016.7578198","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578198","url":null,"abstract":"A complementary current-reuse inductive source-degeneration common-source low noise amplifier (LNA) is presented for low-power and low noise-figure (NF) applications. A transformer-coupling technique is employed to improve the current efficiency and minimize the chip area. The LNA operates at 2.4 GHz and consumes 3 mW from a 1.2-V supply voltage, with a power gain of 13 dB, a NF of 1.8 dB, and an IIP3 of -8.9 dBm. A prototype device is designed and fabricated in 90-nm CMOS technology with a chip area of 1.0 × 0.75 mm2.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":" 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113949769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A decade-bandwidth low-noise mixer RFIC with a distortion-canceling output amplifier 带有消失真输出放大器的十频宽低噪声混频器RFIC
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-08-08 DOI: 10.1109/RFIT.2016.7578140
A. El-Gabaly, Hao Li, C. Saavedra
{"title":"A decade-bandwidth low-noise mixer RFIC with a distortion-canceling output amplifier","authors":"A. El-Gabaly, Hao Li, C. Saavedra","doi":"10.1109/RFIT.2016.7578140","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578140","url":null,"abstract":"This paper presents a 1-10 GHz low-noise down-convert mixer RFIC suitable for wideband receivers. A switched transconductor mixing core is adopted to reduce noise at high frequencies. By adding a series inductor to the RF transconductor, a flat 4-5 dB noise figure (NF) and a high gain of 26.5 dB can be achieved over a broad bandwidth out to 10 GHz. A CMOS output amplifier is also integrated on-chip, employing derivative superposition (DS) for high linearity and an OIP3 of 16.5 dBm. The circuit consumes less than 20 mW of dc power and occupies an active chip area of less than 0.2 mm2.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"32 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115671903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaN-on-silicon devices and technologies for RF and microwave applications 用于射频和微波应用的硅基氮化镓器件和技术
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-08-01 DOI: 10.1109/RFIT.2016.7578151
S. Hsu, Chuan-Wei Tsou, Y. Lian, Yu-Syuan Lin
{"title":"GaN-on-silicon devices and technologies for RF and microwave applications","authors":"S. Hsu, Chuan-Wei Tsou, Y. Lian, Yu-Syuan Lin","doi":"10.1109/RFIT.2016.7578151","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578151","url":null,"abstract":"This paper presents our recent studies on GaN-on-Si devices and technologies for RF and microwave applications. The considerations of layer structure and fabrication technology are reviewed including two different GaN-based heterostructures and optimization of ohmic and Schottky contacts. Also, the proposed novel approaches for achieving high speed GaN-on-Si HEMTs are addressed such as the hybrid-drain structure and silicon substrate removal technology. Finally, the small-signal equivalent circuit model is employed to analyze the parasitic effects of silicon substrate for the device at high frequencies.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122441070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A novel stacked amplifier scheme for expansion of 1-dB compression output power level 一种扩展1db压缩输出功率的新型堆叠放大器方案
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-08-01 DOI: 10.1109/RFIT.2016.7578157
T. Tokumitsu, M. Kubota, S. Fujita, A. Sahashi, M. Imagawa
{"title":"A novel stacked amplifier scheme for expansion of 1-dB compression output power level","authors":"T. Tokumitsu, M. Kubota, S. Fujita, A. Sahashi, M. Imagawa","doi":"10.1109/RFIT.2016.7578157","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578157","url":null,"abstract":"A three-stage current-reuse PHEMT amplifier with a stacked scheme in it (Stacked Triple-HEMT amplifier) is newly proposed. The output voltages of the second (lower) PHEMT and the source-line-connected third (upper) one are designed to be in phase for the best series power combining. Due to this reason, the proposed Triple-HEMT amplifier (Vd = 7.5V) potentially increases the output power level by more than 3dB compared with non-stacked Dual-HEMT amplifier (Vd = 5V). When the gate width of each PHEMT is same, the achieved Pmb improvement was nearly 5dB. Because the circuit area can be same as the non-stacked one, this series-combining technique is also effective to save the area of amplifier MMIC by more than 50% compared to the parallel-combining one.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114152913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Architectures of millimeter wave RF subsystems for 5G applications and their characteristics 面向5G应用的毫米波射频子系统架构及其特性
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-08-01 DOI: 10.1109/RFIT.2016.7578180
H. Chou, Kai-Hao Bai, Chaing-Chyuan Lin, Ming-Hui Lai, Chien-Te Yu
{"title":"Architectures of millimeter wave RF subsystems for 5G applications and their characteristics","authors":"H. Chou, Kai-Hao Bai, Chaing-Chyuan Lin, Ming-Hui Lai, Chien-Te Yu","doi":"10.1109/RFIT.2016.7578180","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578180","url":null,"abstract":"This paper presents the architectures of millimeter waves (mmW) RF subsystems under development by NTU and NCSIST joint team for the 5G applications. Based on the application scenario and link budget estimation, the specification of RF subsystem is defined, which has eight I/O ports to excite the antenna arrays. The concepts of beam switching links and multi-beam sector coverage are separately implemented to investigate their characteristics in the radio propagation. The target of system design aims to achieve 1GHz frequency bandwidth for 3~5 Gbps data rate in a coverage area of 50m. Characteristics of RF components will be presented with a taped system demonstration in the conference presentation.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130656303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide upper stopband and nonorthogonal I/O feed dual-mode LTCC filter 宽上阻带和非正交输入/输出双模LTCC滤波器
2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2016-08-01 DOI: 10.1109/RFIT.2016.7578130
Bo Zhou, Chonghu Cheng, Liwei Yan, Na Zhou, Yujie Cao, Qi Tang, Qianjian Li, Q. Ma, Zhengrong Song, Sizheng Li, Zixuan Wang, Shanwen Hu
{"title":"Wide upper stopband and nonorthogonal I/O feed dual-mode LTCC filter","authors":"Bo Zhou, Chonghu Cheng, Liwei Yan, Na Zhou, Yujie Cao, Qi Tang, Qianjian Li, Q. Ma, Zhengrong Song, Sizheng Li, Zixuan Wang, Shanwen Hu","doi":"10.1109/RFIT.2016.7578130","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578130","url":null,"abstract":"A wide upper stopband and nonorthogonal input/output (I/O) feed dual-mode bandpass filter (BPF) is proposed. The BPF is implemented in a 2-layer low temperature co-fired ceramic (LTCC) substrate and the wide upper stopband is achieved using broadside parallel-coupled lines with stepped impedance feed lines. 40 dB suppression of a 2nd harmonic (2f0) and a prediction of 20 dB suppression up to 2.4f0 are achieved. Furthermore, yield analysis, performance comparisons and discussions are also implemented.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"26 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123462003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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