A 290-GHz CMOS heterodyne integrated imager

Abstract

A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.