T. Tokumitsu, M. Kubota, S. Fujita, A. Sahashi, M. Imagawa
{"title":"A novel stacked amplifier scheme for expansion of 1-dB compression output power level","authors":"T. Tokumitsu, M. Kubota, S. Fujita, A. Sahashi, M. Imagawa","doi":"10.1109/RFIT.2016.7578157","DOIUrl":null,"url":null,"abstract":"A three-stage current-reuse PHEMT amplifier with a stacked scheme in it (Stacked Triple-HEMT amplifier) is newly proposed. The output voltages of the second (lower) PHEMT and the source-line-connected third (upper) one are designed to be in phase for the best series power combining. Due to this reason, the proposed Triple-HEMT amplifier (Vd = 7.5V) potentially increases the output power level by more than 3dB compared with non-stacked Dual-HEMT amplifier (Vd = 5V). When the gate width of each PHEMT is same, the achieved Pmb improvement was nearly 5dB. Because the circuit area can be same as the non-stacked one, this series-combining technique is also effective to save the area of amplifier MMIC by more than 50% compared to the parallel-combining one.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2016.7578157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A three-stage current-reuse PHEMT amplifier with a stacked scheme in it (Stacked Triple-HEMT amplifier) is newly proposed. The output voltages of the second (lower) PHEMT and the source-line-connected third (upper) one are designed to be in phase for the best series power combining. Due to this reason, the proposed Triple-HEMT amplifier (Vd = 7.5V) potentially increases the output power level by more than 3dB compared with non-stacked Dual-HEMT amplifier (Vd = 5V). When the gate width of each PHEMT is same, the achieved Pmb improvement was nearly 5dB. Because the circuit area can be same as the non-stacked one, this series-combining technique is also effective to save the area of amplifier MMIC by more than 50% compared to the parallel-combining one.