A novel stacked amplifier scheme for expansion of 1-dB compression output power level

T. Tokumitsu, M. Kubota, S. Fujita, A. Sahashi, M. Imagawa
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引用次数: 0

Abstract

A three-stage current-reuse PHEMT amplifier with a stacked scheme in it (Stacked Triple-HEMT amplifier) is newly proposed. The output voltages of the second (lower) PHEMT and the source-line-connected third (upper) one are designed to be in phase for the best series power combining. Due to this reason, the proposed Triple-HEMT amplifier (Vd = 7.5V) potentially increases the output power level by more than 3dB compared with non-stacked Dual-HEMT amplifier (Vd = 5V). When the gate width of each PHEMT is same, the achieved Pmb improvement was nearly 5dB. Because the circuit area can be same as the non-stacked one, this series-combining technique is also effective to save the area of amplifier MMIC by more than 50% compared to the parallel-combining one.
一种扩展1db压缩输出功率的新型堆叠放大器方案
提出了一种采用堆叠方式的三相电流复用PHEMT放大器(堆叠三重hemt放大器)。第二个(下)PHEMT和第三个(上)PHEMT的输出电压被设计成相一致,以实现最佳的串联功率组合。由于这个原因,与非堆叠的双hemt放大器(Vd = 5V)相比,所提出的Triple-HEMT放大器(Vd = 7.5V)的输出功率水平可能增加3dB以上。当每个PHEMT的栅极宽度相同时,实现的Pmb改进接近5dB。由于电路面积可以与非堆叠电路相同,因此与并联电路相比,串联组合技术可以有效地节省放大器MMIC面积的50%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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