{"title":"Design of 38-GHz branch-line coupler in glass-substrate integrated passive device technology","authors":"Chih-Lin Chang, C. Tseng","doi":"10.1109/RFIT.2016.7578176","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578176","url":null,"abstract":"This paper presents 38-GHz branch-line coupler designed in the glass-substrate integrated passive device (GIPD) technology. To retain a similar return loss bandwidth as that of the conventional one and reduce the circuit size, the asymmetrical coplanar-waveguide (CPW) T-structures are employed to implement the developed coupler. Using the proposed design approach can achieve comparable performances as those using the CMOS or GaAs integrated circuit process, and provide an effective technique to synthesize millimeter-wave GIPD passive components.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115974912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Polarization-reconfigurable slot loop antenna based on a novel varactor-loaded feeding network","authors":"Shih-An Yang, Shih-Chia Chiu, Chien-Pai Lai, Shih-Yuan Chen","doi":"10.1109/RFIT.2016.7578170","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578170","url":null,"abstract":"A polarization-reconfigurable slot loop antenna is realized based on a novel reconfigurable feeding circuit, which consists of two varactor diodes, two inductors, and two transmission line sections. The polarization of the proposed antenna can be adjusted to be linear, right- or left-handed circular or even elliptical polarization with arbitrary axial ratio. Meanwhile, the resultant impedance response remains nearly unchanged. The simulated and measured results of the impedance and radiation performances are presented for verification.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130163122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Base station assisted communication system for achieving local-oscillator-less mobile stations","authors":"A. Fukuda, H. Okazaki, S. Narahashi","doi":"10.1109/RFIT.2016.7578121","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578121","url":null,"abstract":"This paper proposes a novel system concept in which has base stations (BSs) assist in part of mobile station (MS) functions for future mobile communications in the fifth generation era. In the proposed system, two BSs provide different signals: one transmits a modulated signal with the bandwidth and the other transmits a continuous wave (CW) signal at a different frequency. The CW signal is utilized as a local signal to detect the received modulated signal at the MSs. An advantage of this scheme is that the radio frequency frontend configuration of the MS is simplified because it is not necessary to implement a local oscillator with a high frequency and high purity. However, since the CW signal is received with the modulated signal at the MS, its receiver must appropriately extract the CW signal from the received signals. Therefore, this paper also presents a novel receiver that has a CW extraction function. To confirm the feasibility of the proposals, a transmission system including the proposed receiver is constructed and tested at around 3.9 GHz. Measurement results show that an adequate quality level with the EVM degradation of approximately 0.1% is achieved using the extracted CW signal from the received signals.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115470546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Hadi, Yan Zhao, Mau-Chung Frank Chang, Xuanhong Cheng, James C. M. Hwang
{"title":"On-chip terahertz signal generators for near-field biosensor arrays","authors":"R. Hadi, Yan Zhao, Mau-Chung Frank Chang, Xuanhong Cheng, James C. M. Hwang","doi":"10.1109/RFIT.2016.7578190","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578190","url":null,"abstract":"This paper assesses the feasibility of an on-chip array of terahertz generators/detectors for near-field sensing of a biological cell. With the prototype design, signal generation around 0.55 THz was measured and near-field sensing across the surface of a flat silicon wafer was demonstrated.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127226018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ching-Yun Chu, Shao-Ting Tseng, Jing-Zhi Gao, Yuan-Pu Chen, Yu‐Chen Chang, Chien-Wei Tseng, Tzu-Yuan Huang, Bo-Syun Hu, B. Su, Ta-Shun Chu, Yu-Jiu Wang
{"title":"A fully-integrated Ka-band 4TX/4RX phased-array transceiver IC in 65nm CMOS","authors":"Ching-Yun Chu, Shao-Ting Tseng, Jing-Zhi Gao, Yuan-Pu Chen, Yu‐Chen Chang, Chien-Wei Tseng, Tzu-Yuan Huang, Bo-Syun Hu, B. Su, Ta-Shun Chu, Yu-Jiu Wang","doi":"10.1109/RFIT.2016.7578153","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578153","url":null,"abstract":"This paper presents a fully-integrated Ka-band 4RX/4TX phased-array transceiver IC. The four transceiver channels are synchronized by an I/Q standing wave oscillator (SWO). Their signal phases are shifted by hybrid analog IF and LO phase interpolators, and can be controlled digitally and independently. The SWO further composes an on-chip PLL, and is locked to a 1.09 GHz off-chip global reference to scale to a large array at board level. Each receiver channel achieves 66 dB maximum conversion gain and 4.4 dB minimum noise figure. Each transmitter channel achieves 18 dBm maximum output power. The chip is mounted on a high-frequency laminate, inside which embedded cables connect its RF pads to Vivaldi antennas also inside the same PCB. With the PCB, each channel achieves 360° phase shifting capability under a maximum calibrated 3.7° phase errors. The PCB module presents successful beam steering with 23° measured four-channel 3-dB beamwidth. This chip consumes a peak 5 W power at transmit mode, and is fabricated in TSMC 65nm CMOS technology with a 4 × 2.5 mm2 chip area.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132406923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 1–5 GHz frequency-to-voltage converter using limiting amplifier","authors":"Han-Bo Lin, Tzu-Chao Yan, C. Kuo","doi":"10.1109/RFIT.2016.7578114","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578114","url":null,"abstract":"A frequency-to-voltage converter (FVC) is designed for directly converting an input radio-frequency to a dc output voltage over a wide microwave frequency range. The proposed circuit consists of a limiting amplifier (LA) for converting input frequency to correspond ac magnitude and a power detector for ac magnitude to dc voltage conversion. Consequently, the circuit converts the signal frequency of 1-5 GHz to the measured dc voltage of 0.25-1.39 V under the input power level at +5 dBm. The RMS error is below 1.37 %. Implemented in 0.18 μm CMOS technology, the dc power consumption varies from 17.4 to 19.4 mW with 1.8 V supply voltage, depending on the input frequency. The fabricated chip occupies the size of 860 × 500 μm2.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132044027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"24 GHz phase-tunable resistively-coupled VCO","authors":"Jaecheol Oh, Cheol So, Songcheol Hong","doi":"10.1109/RFIT.2016.7578137","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578137","url":null,"abstract":"In this paper, a 24 GHz phase-tunable resistively-coupled VCO is presented. The proposed VCO consists of two identical VCOs which are coupled through resistors. By differentiating free-running frequencies of two VCOs by controlling variable capacitances of their respective resonators, continuous phase difference between the VCOs upto 90° could be established. This shows the phase noise of -95.3 dBc/Hz and tuning range of 11.8 % with 18 mW DC power consumption. This is fabricated using 0.13 um CMOS process with its chip area of 1×1 mm2. The phase difference tuning capability of coupled oscillators can be used in some applications.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122559282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-efficiency silicon RF power amplifier design – current status and future outlook","authors":"D. Lie, J. Tsay, T. Hall, T. Nukala, J. Lopez","doi":"10.1109/RFIT.2016.7578181","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578181","url":null,"abstract":"Silicon RF power amplifiers (PAs) are in various RF front end modules (FEMs) today for handset and WLAN applications. Even though III-V semiconductor-based RF PAs can still offer superior frequency and breakdown performance with higher Pout and power-added-efficiency (PAE) and faster time-to-market, silicon-based RF PAs do have the advantages in offering higher monolithic integration with added functionalities (e.g., on-chip digital control and selection on power level, modulation, frequency band, matching, predistortion, etc.), which can translate to lower cost and smaller sizes attractive for broadband multi-mode multi-band handset transmitters. Therefore, some key techniques for designing high-efficiency 4G/5G/WLAN broadband wireless silicon PAs will be discussed.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131186711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Equivalent circuit model of multi-layered coils for integrated sensor applications in medium-wave frequencies","authors":"Kaiji Nakahara, F. Kuroki","doi":"10.1109/RFIT.2016.7578133","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578133","url":null,"abstract":"Representation of an accurate equivalent circuit model of sensor coil is an important issue, an operational frequency being higher. Generally, the coil is represented by an inductance element connected with a resistance in series and a capacitance in parallel. In use of multi-layered coils at medium wave frequencies, it is however considered that the correction of the model should be needed to make the accurate equivalent circuit model. Having this fact in minds, inductances, resistances, and capacitances of the multi-layered coils were extracted by the electromagnetic field simulator and a new type of equivalent circuit of the multilayered coil was evaluated by comparing the calculated results with the measured ones. And the validity was confirmed in this paper.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115158532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Q-band LNA with 55.7% bandwidth for radio astronomy applications in 0.15-μm GaAs pHEMT process","authors":"Yu-Ting Chou, Chau-Ching Chiong, Huei Wang","doi":"10.1109/RFIT.2016.7578197","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578197","url":null,"abstract":"In this paper, we present a broadband Q-band LNA for radio astronomy applications using 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. With bandwidth enhancement techniques, the LNA achieves relatively broadband performance. The LNA attains 23 dB small signal gain from 28.5 to 50.5 GHz and shows a measured noise figure of 3.8 dB from 35 to 50 GHz with 62.6-mW dc power consumption. The figure-of-merit (FOM) of the LNA is 3.5 (GHz/mW), which is competitive compared with other published Q-band LNAs.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132836755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}