{"title":"A vital sign radar receiver with integrated A/D converter and dynamic clutter cancellation","authors":"T. Tsai, Bo-Yu Shiu, Chieh-Lin Ho, Jenshan Lin","doi":"10.1109/RFIT.2016.7578142","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578142","url":null,"abstract":"A 5.8 GHz radar receiver for non-contact vital sign detection system is designed and implemented in a TSMC CMOS 0.18 μm process technology. The radar receiver integrates variable gain amplifiers and A/D converters on a single chip. In order to make sure the output signal is within the optimal dynamic range, a clutter cancellation mechanism is implemented in the system. Also, null points can be avoided by using I/Q demodulation. Experimental results show that respiration and heartbeats of human subjects are successfully detected in the laboratory environments. The overall power consumption is about 55 mW.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125047234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On-chip liquid detector using synthesized transmission line on integrated passive device process","authors":"H. Chen, H. Chu, T. Ma","doi":"10.1109/RFIT.2016.7578143","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578143","url":null,"abstract":"In this paper, we investigate a compact on-chip liquid detector fabricated by integrated passive device (IPD) process. The on-chip detector simply consists of a section of dual-operation mode synthesized transmission line, whose electrical properties are highly depended on the material medium surrounding the chip. Specifically, the capacitance of the line changes in accordance with the dielectric constant of that medium, which in turn shapes the transmission response of the line. The synthesis equations are first introduced, followed by its application to extracting the complex dielectric constant of unknown liquid such as the alcoholic solutions.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"271 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134065456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"5–6 GHz CMOS low-noise direct conversion receiver using a differential RF VGA with a differential inductor load","authors":"Wei-Ling Chang, C. Meng, Chih-Kai Chang, G. Huang","doi":"10.1109/RFIT.2016.7578129","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578129","url":null,"abstract":"A low-noise low-power direct conversion receiver with a differential RF VGA is demonstrated using 0.18um CMOS technology. A topology that uses a differential inductor load for a differential RF VGA is employed for the single-to-differential conversion. Since the common-mode rejection ratio of a differential variable gain amplifier is increased by the mutual magnetic coupling in a differential inductor load, this work achieves noise floor less than 5 dB covering the 5-6 GHz band. Moreover, the conversion gain is around 50 dB and the total current consumption is 4.75 mA at 1.8 V supply voltage.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134502217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wireless powering system with backside metallic plates using electric- and magnetic-coupling mechanisms","authors":"Chong-Yi Liou, Chi-Jung Kuo, Shau-Gang Mao","doi":"10.1109/RFIT.2016.7578158","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578158","url":null,"abstract":"This study proposes a novel high-efficiency wireless powering system using the electric- and magnetic-coupling mechanisms to improve the proximity effect of metal plates. The hybrid resonator consisting of the patch and coil is employed in the wireless powering system. A good agreement among the equivalent-circuit model, simulation, and measurement of the proposed wireless powering system is observed by verifying power transmission, impedance matching, resonant frequency, and eddy current distribution. The proposed wireless powering system using the electric- and magnetic-coupling mechanisms with the backside metallic plates increases the power transmission from -14.2 dB to -0.5 dB as compared to the conventional wireless powering system using the magnetic-coupling mechanism.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128914076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An all-transmission-line 220 GHz differential LNA in SiGe BiCMOS","authors":"Y. Mao, E. Shiju, K. Schmalz, C. Scheytt","doi":"10.1109/RFIT.2016.7578132","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578132","url":null,"abstract":"This paper presents a four stage all-transmission-line 220 GHz differential LNA in SiGe BiCMOS technology. Cascode topology is chosen for each stage. The amplifier takes advantage of microstrip transmission lines to realize the inductive load, Marshand balun, input, output, and inter-stage matching of the LNA. The LNA has a gain of 21 dB at 224 GHz, a 3 dB bandwidth of more than 6 GHz. It has a supply voltage of 3V and power dissipation of 234 mW. The amplifier is intended for the use in communication, security scanning, imaging and remote sensing at 220 GHz.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131046985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuh-Jing Hwang, Chau-Ching Chiong, Shou-Shien Weng, Yau-De Huang, Y. Kuo, Hong-Yeh Chang, Yo-Shen Lin, Zuo‐Min Tsai, Huei Wang
{"title":"Broadband radio-frequency integrated circuits and modules for astronomical instruments in Taiwan","authors":"Yuh-Jing Hwang, Chau-Ching Chiong, Shou-Shien Weng, Yau-De Huang, Y. Kuo, Hong-Yeh Chang, Yo-Shen Lin, Zuo‐Min Tsai, Huei Wang","doi":"10.1109/RFIT.2016.7578203","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578203","url":null,"abstract":"Various kinds of broadband radio frequency integrated circuits for astronomical instrument were developed in Taiwan during past 18 years. In this paper the key technology and results, including the circuit design, testing, packaging and system integration are described.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126434031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chieh-Hsun Hsiao, T. Horng, K. Peng, Chan-Hung Lee
{"title":"A low-noise CMOS frequency synthesizer with an ultra-short settling time","authors":"Chieh-Hsun Hsiao, T. Horng, K. Peng, Chan-Hung Lee","doi":"10.1109/RFIT.2016.7578154","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578154","url":null,"abstract":"In this work, a novel self-injection-locked (SIL) loop is incorporated into a CMOS frequency synthesizer for fast frequency switching. The proposed SIL loop is based on an injection-locked oscillator (ILO) which behaves as an active delay unit to suppress the excess phase noise produced owing to the large phase-locked loop (PLL) bandwidth. Consequently, the synthesizer with the ILO-based SIL loop can achieve an ultrashort settling time of 2.3 μs and simultaneously a low phase noise of -123 dBc/Hz at 1 MHz offset frequency.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115253706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 220–320 GHz single-pole single-throw switch","authors":"Younghwan Kim, Hyunkyu Lee, S. Jeon","doi":"10.1109/RFIT.2016.7578184","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578184","url":null,"abstract":"This paper presents a single-pole single-throw (SPST) switch operating over the entire WR-3 band. The SPST switch is composed of two shunt transistors and transmission lines in between to resonate the off capacitance of the transistors. The switch is implemented using a 250-nm InP DHBT technology. The measured insertion loss and isolation are no more than 2.9 dB and 13.1 dB, respectively, from 220 to 320 GHz. The return loss is better than 10.2 dB over the same bandwidth.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114699611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yen-Liang Yeh, Xiang Lin, Hong-Yeh Chang, Kevin Chen
{"title":"A V-band 65 nm CMOS low DC power low phase noise PLL using divide-by-three injection-locked frequency divider","authors":"Yen-Liang Yeh, Xiang Lin, Hong-Yeh Chang, Kevin Chen","doi":"10.1109/RFIT.2016.7578116","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578116","url":null,"abstract":"A K-band 65 nm CMOS low dc power low phase noise phase-locked loop (PLL) using divide-by-three injection-locked frequency divider (ILFD) is presented in this paper. Based on the injection-locked technique for the first stage of the frequency divider chain, the proposed PLL can be operated up to K-band with low dc power consumption. The ILFD features high division, high speed, and low power. With a total dc power consumption of 43.4 mW, the proposed PLL demonstrates a phase noise of -83.5 dBc/Hz at 1 MHz offset, a reference spur suppression of -66 dBc, and a maximum operation frequency of up to 58.9 GHz. This work can be compared to the reported advanced K-band CMOS PLLs and suitable for the local oscillator chain of the millimeter-wave frontends.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126154615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultra low power Colpitts VCO with body-bias voltage controled technique","authors":"W. Lai, S. Jang, Shyh-Shyang Su, C. Hsue","doi":"10.1109/RFIT.2016.7578127","DOIUrl":"https://doi.org/10.1109/RFIT.2016.7578127","url":null,"abstract":"This letter presents a 0.6V low power Voltage Control Oscillator (VCO) which designed and implemented in TSMC 0.18μm CMOS 1P6M process. This circuit using Colpitts structure and body-bias controlled technique that can reduce power consumption. At the supply voltage 0.6V, the output frequency is 1.24GHz and the phase noise is -121.62dBc/Hz at 1MHz offset. Excluding output buffers the VCO consumes the power 0.12mW under a standard supply of 0.6 V and Current only 0.2mA. The FOM of this VCO is -192.67Bc/Hz.","PeriodicalId":273434,"journal":{"name":"2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121864123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}