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The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters d模AlGaN/GaN mishemt刻蚀深度对输入10v直接耦合FET (DCFL)逆变器直流和交流特性的影响
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790909
Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, H. Wen, I. Mitrovic, Stephen Taylor, P. Chalker, Cezhou Zhao
{"title":"The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters","authors":"Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, H. Wen, I. Mitrovic, Stephen Taylor, P. Chalker, Cezhou Zhao","doi":"10.1109/ICICDT.2019.8790909","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790909","url":null,"abstract":"Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 °C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 °C to 250 °C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129390833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An Application-Specific Microprocessor for Energy Metering Based on RISC-V 基于RISC-V的电能计量专用微处理器
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790918
Yajie Wang, N. Tan
{"title":"An Application-Specific Microprocessor for Energy Metering Based on RISC-V","authors":"Yajie Wang, N. Tan","doi":"10.1109/ICICDT.2019.8790918","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790918","url":null,"abstract":"This paper presents an application-specific 32-bit micro-processor for energy metering based on RISC-V Instruction Set Architecture (ISA). The proposed processor features a three-stage pipeline with separate write-back ports and has low complexity in control. We also propose novel instructions for energy accumulation of energy metering. Compared with other designs, using the instructions can improve the performance of energy accumulation. The design is implemented on Xilinx Kintex-7 (xc7k410t-3fbg676) FPGA.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125233061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices Al+注入对Al2O3/La2O3/Al2O3多层RRAM器件开关特性的影响
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790907
Hongxia Liu, Xing Wang
{"title":"Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices","authors":"Hongxia Liu, Xing Wang","doi":"10.1109/ICICDT.2019.8790907","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790907","url":null,"abstract":"Resistive Random Access Memory (RRAM) devices were designed using Al<inf>2</inf>O<inf>3</inf>/La<inf>2</inf>O<inf>3</inf>/Al<inf>2</inf>O<inf>3</inf> multilayer structure grown by atomic layer deposition as functional layers. The impact of Al<sup>+</sup> ions implantation on the resistive switching performances was investigated. Compared with the control sample, the Al<sup>+</sup> implanted devices exhibit significantly enhanced memory performances including the forming-free behavior, improved uniformity, stability, enlarged ON/OFF resistance ratio, and good data retention characteristics. The stable resistive switching behavior with an acceptable resistance ratio enable the Al<sup>+</sup> implanted Al<inf>2</inf>O<inf>3</inf>/La<inf>2</inf>O<inf>3</inf>/Al<inf>2</inf>O<inf>3</inf> multilayer RRAM device for its application in the future nonvolatile memory devices.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116159928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer 具有低位错密度漂移层的高性能准垂直GaN肖特基势垒二极管
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790866
Yue Li, R. Yin, M. Tao, Y. Hao, C. Wen, Maojun Wang, Jie Zhang, Xuelin Yang, B. Shen
{"title":"High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer","authors":"Yue Li, R. Yin, M. Tao, Y. Hao, C. Wen, Maojun Wang, Jie Zhang, Xuelin Yang, B. Shen","doi":"10.1109/ICICDT.2019.8790866","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790866","url":null,"abstract":"In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 1010, the lowest specific on-resistance of 0.95 mΩ·cm2, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127279982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator AlGaN/GaN高电子迁移率晶体管比较器的设计与评价
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790910
Bangbo Sun, H. Wen, Qingling Bu, Wen Liu
{"title":"Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator","authors":"Bangbo Sun, H. Wen, Qingling Bu, Wen Liu","doi":"10.1109/ICICDT.2019.8790910","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790910","url":null,"abstract":"As one key building block for mixed-signal IC applications, AlGaN/GaN high electron mobility transistor (HEMT) voltage comparator shows obvious advantages. This paper aims to study on the dc and dynamic characterization of AlGaN/GaN HEMT voltage comparator by simulation under different conditions. In this paper three characteristics of the AlGaN/GaN HEMT comparator are simulated by Advanced Design System (ADS) software: the DC characteristics of discrete E and D mode AlGaN/GaN HEMTs, the voltage transfer characteristics of the HEMTs voltage comparator and the propagation delay time. These results show that the AlGaN/GaN HEMT comparator has the features of a good voltage transfer characteristics and a small propagation delay time.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"38-40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116768005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-healing Control and Auto-measurement Technique for Smart Distribution Grid 智能配电网自愈控制与自动测量技术
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790904
Zai-xin Yang, Rubi Han, Yun-min Wang, Yuan Gao
{"title":"Self-healing Control and Auto-measurement Technique for Smart Distribution Grid","authors":"Zai-xin Yang, Rubi Han, Yun-min Wang, Yuan Gao","doi":"10.1109/ICICDT.2019.8790904","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790904","url":null,"abstract":"Summarizing the key technologies of distribution grid is of great importance for improving the reliability and intelligence. The core researches of distribution automation system are analyzed, including centralized FA and intelligent distributed FA, and self-healing control algorithms are described in detail. Auto-measurement methods of system-level and device-level are applied to test the performance of the master station and the terminals. A RTDS simulation test-bed of distribution grid is evaluated with great practicability. Moreover, this paper prospected the direction of smart distribution grid in fault detection of small current, flexible AC/DC interconnection and power Cyber-physical System (CPS).","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"62 20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120859327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Miniaturized and High Precision Monitoring System for Natural Waters Using a Microflow Analyzer 使用微流量分析仪的小型高精度自然水体监测系统
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790916
Lin-Lin Ren, Jun Ren, Fu-Hua Jin, Tianyu Jiang, Jun Fu, Yezhou Yang, T. Ren
{"title":"Miniaturized and High Precision Monitoring System for Natural Waters Using a Microflow Analyzer","authors":"Lin-Lin Ren, Jun Ren, Fu-Hua Jin, Tianyu Jiang, Jun Fu, Yezhou Yang, T. Ren","doi":"10.1109/ICICDT.2019.8790916","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790916","url":null,"abstract":"In this work, we fabricated a miniaturized water quality monitoring system with microfluidic analysis chip to meet the high density and network requirements of wide area water system monitoring. The framework of the system is a layered tower structure, including human-computer interaction module, micro-control module, microfluidic chip and master control module. The miniaturized water quality monitoring system optimizes the integration of microfluidic technology and absorption photometric detection methods, and the design of the micro control system ensures automatic analysis of water quality. Experiments show that the system has excellent detection performance while achieving miniaturization. The detection limit (LOD) of the miniatured analyzer was 3.4 μM, and the reaction time was between 100 s and 300 s. The reagent consumption is only 6 μL per sample.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129351082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cost-Effective Reliable EEPROM Cell Based on Single-poly Structure 基于单聚结构的高性价比可靠EEPROM电池
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790902
Peiying Song, Quan Sun, M. Qi, Donghai Qiao, Chunfeng Bai
{"title":"Cost-Effective Reliable EEPROM Cell Based on Single-poly Structure","authors":"Peiying Song, Quan Sun, M. Qi, Donghai Qiao, Chunfeng Bai","doi":"10.1109/ICICDT.2019.8790902","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790902","url":null,"abstract":"A novel single-poly EEPROM cell composed of two PMOS transistors is presented in this paper. A PMOS tunneling transistor is utilized to enhance the reliability of the memory cell during the erase operation, and the other one is used as the coupling transistor. A minimum-sized PMOS is used to improve the capacitance coupling coefficient and saves area consumption. An additional PMOS transistor is added to each array cell to ensure high efficiency and safety. The memory cell is fabricated in a 0.5μm CMOS process. The test results show that the proposed structure can be cycled for more than 20k times under the write and erase potential of 15V with 10ms operation pulse.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125231582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters 基于增强模式AlGaN/GaN mis_hemt的GaN功率变换器全GaN集成锯齿发生器
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790928
Xueteng Li, Miao Cui, Wen Liu
{"title":"A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters","authors":"Xueteng Li, Miao Cui, Wen Liu","doi":"10.1109/ICICDT.2019.8790928","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790928","url":null,"abstract":"AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have superior advantages like low leakage current and large gate swing. To fully use those advantages, this paper proposes a monolithic sawtooth generator circuit, which can generate a 100 kHz sawtooth waveform with a peak-to-peak voltage of around 3.5 V under 10 V power supply. The integrated circuit is calibrated and simulated by Advanced Design System (ADS). Good agreement between simulations and experimental results indicates the feasibility of GaN MIS-HEMTs on high power electronics application.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130480805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High-Voltage Driver for Fully-Integrated Piezoelectric Inkjet Printhead Module 全集成压电喷墨打印头模块的高压驱动器
2019 International Conference on IC Design and Technology (ICICDT) Pub Date : 2019-06-17 DOI: 10.1109/ICICDT.2019.8790879
Zhuoqi Guo, Rui Xu, Li Geng, Baoxia Li
{"title":"High-Voltage Driver for Fully-Integrated Piezoelectric Inkjet Printhead Module","authors":"Zhuoqi Guo, Rui Xu, Li Geng, Baoxia Li","doi":"10.1109/ICICDT.2019.8790879","DOIUrl":"https://doi.org/10.1109/ICICDT.2019.8790879","url":null,"abstract":"With the help of the MEMS technology, printhead arrays can be integrated in a piezoelectric inkjet printhead (PIP) module. In this work, a fully-integrated PIP module is proposed. The 3D-packaged module connects the MEMS PIP arrays and the high-voltage driver IC by Through Silicon Via (TSV) technology. The high-voltage driver with the distributed model of TSV is designed and the joint simulations of high-voltage driver, TSV and PIP are carried out to ensure the performance of the 3D-packaged module. The prototype of the driver is designed with a high-voltage 0.18 μm CMOS technology. The maximum driving voltage is 50 V and the driving capacity is 8 channels (0.8 nF) with the slew rate of 37 V/μs.","PeriodicalId":270097,"journal":{"name":"2019 International Conference on IC Design and Technology (ICICDT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133345059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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