High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

Abstract

In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 1010, the lowest specific on-resistance of 0.95 mΩ·cm2, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.