A full GaN-Integrated Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters

Abstract

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have superior advantages like low leakage current and large gate swing. To fully use those advantages, this paper proposes a monolithic sawtooth generator circuit, which can generate a 100 kHz sawtooth waveform with a peak-to-peak voltage of around 3.5 V under 10 V power supply. The integrated circuit is calibrated and simulated by Advanced Design System (ADS). Good agreement between simulations and experimental results indicates the feasibility of GaN MIS-HEMTs on high power electronics application.