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[1991] 49th Annual Device Research Conference Digest最新文献

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Heterodyne Measurement of Linewidth, Tunability and Frequency Synthesis of Vertical-Cavity Surface-Emitting Laser Diode Arrays 垂直腔面发射激光二极管阵列线宽、可调性和频率合成的外差测量
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664684
G. Olbright, R. Bryan, W. S. Fu, R. Apte, D. Bloom
{"title":"Heterodyne Measurement of Linewidth, Tunability and Frequency Synthesis of Vertical-Cavity Surface-Emitting Laser Diode Arrays","authors":"G. Olbright, R. Bryan, W. S. Fu, R. Apte, D. Bloom","doi":"10.1109/DRC.1991.664684","DOIUrl":"https://doi.org/10.1109/DRC.1991.664684","url":null,"abstract":"Summary form only given. The linewidth of vertical-cavity surface-emitting lasers (VCSELs) (65 MHz), the tunability of their lasing wavelength (20 AA), and the tunability of the heterodyne beat frequency (65 MHz to 150 GHz) were measured by varying the drive current to the lasers. The ability to control the output wavelength of VCSELs by current and location on the wafer makes it possible to extrapolate tunability over a range from 65 MHz to 3 THz. While the spatial tunability of 3 THz is of interest for wavelength-division multiplexing schemes, the current tunability of 150 GHz is attractive for frequency control and stabilization. The observation of narrow VCSEL linewidths is encouraging for their potential applications in communications. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117160861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology 基于AlInAs-Gainas Hbt技术的36ghz静态数字分频器
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664725
J. Jensen, W. Stanchina, R. A. Metzger, T. Liu, T. V. Kargodorian, M. W. Pierce, L. McCray
{"title":"36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology","authors":"J. Jensen, W. Stanchina, R. A. Metzger, T. Liu, T. V. Kargodorian, M. W. Pierce, L. McCray","doi":"10.1109/DRC.1991.664725","DOIUrl":"https://doi.org/10.1109/DRC.1991.664725","url":null,"abstract":"Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE). >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128804467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy 分子束外延生长的高增益谐振Ingaaias/ingaas异质结双极光电晶体管
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664697
A. Dodabalapur, T. Chang
{"title":"High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy","authors":"A. Dodabalapur, T. Chang","doi":"10.1109/DRC.1991.664697","DOIUrl":"https://doi.org/10.1109/DRC.1991.664697","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132996864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the Investigation of Degradation Mechanisms in Ultra-High Performance Gaas Heterojunction Bipolar Transistors 超高性能Gaas异质结双极晶体管退化机理研究
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664724
Yang-Hua Chang, G. Li, A. Oki, D. Streit, M. Hafizi, M.E. Kim
{"title":"On the Investigation of Degradation Mechanisms in Ultra-High Performance Gaas Heterojunction Bipolar Transistors","authors":"Yang-Hua Chang, G. Li, A. Oki, D. Streit, M. Hafizi, M.E. Kim","doi":"10.1109/DRC.1991.664724","DOIUrl":"https://doi.org/10.1109/DRC.1991.664724","url":null,"abstract":"Summary form only given. Recently, current-induced degradation in the form of V/sub BE/ shifts has been reported when the heterojunction is stressed under high-level forward current injection. Although the V/sub BE/ shift is an indication of device parameter change, the degradation mechanisms cannot be readily identified. An approach is presented that uncovers the device degradation mechanisms by measuring the inverted mode I/sub C/ at room temperature and the forward mode I/sub B/ at low temperature. The correlation between the change in the inverted I/sub C/ and an anomalous component (tunneling current) of I/sub B/ is observed and attributed to beryllium interstitial diffusion into substitutional sites. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"17 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132748102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduction of Low-Frequency Noise in Npn Aigaas/gaas HBTs Npn Aigaas/gaas HBTs中低频噪声的降低
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664723
D. Costa, W.U. Liu, J. Harris
{"title":"Reduction of Low-Frequency Noise in Npn Aigaas/gaas HBTs","authors":"D. Costa, W.U. Liu, J. Harris","doi":"10.1109/DRC.1991.664723","DOIUrl":"https://doi.org/10.1109/DRC.1991.664723","url":null,"abstract":"","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Development of an Interactive Design Environment for Heterostructure and Quantum-Well Devices 异质结构和量子阱器件交互设计环境的开发
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664696
W. Frensley
{"title":"Development of an Interactive Design Environment for Heterostructure and Quantum-Well Devices","authors":"W. Frensley","doi":"10.1109/DRC.1991.664696","DOIUrl":"https://doi.org/10.1109/DRC.1991.664696","url":null,"abstract":"Summary form only given. Heterostructures provide so many design parameters that it is impractical to adequately explore the design space empirically. The ability to evaluate the effects of changes to any design parameter rapidly is needed. A program, BandProf, that implements a one-dimensional, zero-current model to determine the self-consistent electrostatic potential and thus the energy-band profile is discussed. Realistic physical models are employed, including multiple-band extrema and full impurity statistics. This approach to device simulation, demanding results in a few seconds for structures of arbitrary design, requires that elegant and robust techniques be applied to every task performed by the program. Two such innovations embodied in BandProf are described. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114792746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser Annealing 准分子激光退火提高多晶硅Tft再结晶迁移率的新方法
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664674
H. Kuriyama, S. Kiyama, T. Kuwahara, S. Noguchi, S. Nakano
{"title":"A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser Annealing","authors":"H. Kuriyama, S. Kiyama, T. Kuwahara, S. Noguchi, S. Nakano","doi":"10.1109/DRC.1991.664674","DOIUrl":"https://doi.org/10.1109/DRC.1991.664674","url":null,"abstract":"Summary form only given. A SEM study after dry etching was conducted for poly-Si films recrystallized by excimer laser annealing. It was found that the grain size could be enlarged to about 300 nm using the low-temperature (400 degrees C) substrate heating method. The authors propose a low-temperature ( >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133749046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra-Compact Monolithic Integration of Polarization Diversity Waveguide/Photodiodes 偏振分集波导/光电二极管的超紧凑单片集成
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664715
R. J. Den, E. Pennings, R. Hawkins, C. Caneau
{"title":"Ultra-Compact Monolithic Integration of Polarization Diversity Waveguide/Photodiodes","authors":"R. J. Den, E. Pennings, R. Hawkins, C. Caneau","doi":"10.1109/DRC.1991.664715","DOIUrl":"https://doi.org/10.1109/DRC.1991.664715","url":null,"abstract":"Summary form only given. A description is given of a device which consists of an input rib waveguide, a vertically defined coupler, a vertically coupled mesa p-i-n photodiode (PD), a second coupler, and a second PD, all serially connected. A gold cover on the first coupler ensures that only TE-polarized light is coupled into the first PD; the second coupler/PD pair collects the remaining TM light. Component lengths are 79 and 54 mu m for couplers and 21 and 31 mu m for PDs, for approximately 200- mu m total detector length. The device consists of p-InGaAsP/i-InGaAs/n-InGaAsP PD layers above semi-insulating coupler layers (two GaAsP:Fe guides, InP:Fe cladding). The vertically integrated coupler/detectors are more than an order of magnitude smaller than conventional couplers, and of comparable size to electronic components (e.g. FET gate widths). >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125598191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optical Confinement Factor Dependence of K-factor, Differential Gain and Nonlinear Gain in 1.55/spl mu/m Mqw and Strained Mqw Lasers 1.55/spl μ m Mqw和应变Mqw激光器中k因子、差分增益和非线性增益的光约束因子依赖性
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664683
J. Shimizu, H. Yamada, S. Murata, A. Tomita, M. Kitamura, A. Suzuki
{"title":"Optical Confinement Factor Dependence of K-factor, Differential Gain and Nonlinear Gain in 1.55/spl mu/m Mqw and Strained Mqw Lasers","authors":"J. Shimizu, H. Yamada, S. Murata, A. Tomita, M. Kitamura, A. Suzuki","doi":"10.1109/DRC.1991.664683","DOIUrl":"https://doi.org/10.1109/DRC.1991.664683","url":null,"abstract":"Summary form only given. Systematic studies on the optical confinement factor dependence of the K-factor, differential gain, and nonlinear gain coefficient in 1.55- mu m MQW and strained MQW lasers are reported. The most important conclusion of these studies is that the K-factors in the MQW and strained MQW lasers are reduced as the optical confinement factor is increased. This mainly results from the increase in the differential gain. Strained MQW lasers with large optical confinement factors are expected to achieve small K-factors and large modulation bandwidths. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High Speed Single Quantum Well Ingaas/gaas Laser Design and Experiment 高速单量子阱Ingaas/gaas激光器设计与实验
[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI: 10.1109/DRC.1991.664665
R. Nagarajan, T. Fukushima, J. Bowers, R. Geels, L. Coldren
{"title":"High Speed Single Quantum Well Ingaas/gaas Laser Design and Experiment","authors":"R. Nagarajan, T. Fukushima, J. Bowers, R. Geels, L. Coldren","doi":"10.1109/DRC.1991.664665","DOIUrl":"https://doi.org/10.1109/DRC.1991.664665","url":null,"abstract":"Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of 15 GHz obtained in SQW (single quantum well) lasers as a result of proper design of the quantum-well structure. The laser samples were grown on","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114423775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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