基于AlInAs-Gainas Hbt技术的36ghz静态数字分频器

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664725

J. Jensen, W. Stanchina, R. A. Metzger, T. Liu, T. V. Kargodorian, M. W. Pierce, L. McCray

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引用次数: 11

摘要

只提供摘要形式。采用AlInAs-GaInAs异质结双极晶体管(HBT) IC技术，分别处理110 GHz和73 GHz的f/sub / t/和f/sub max/，制备了工作频率高达36 GHz的静态四分频电路。所使用的晶体管由一个突然的发射极-基底结设计组成，该设计将低温p-GaInAs间隔层作为基底的一部分，以抑制铍的扩散。采用固体源分子束外延技术(MBE)在半绝缘InP衬底上生长出晶格匹配的AlInAs-GaInAs HBT器件层。>

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36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology

Summary form only given. Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE). >

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[1991] 49th Annual Device Research Conference Digest

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