准分子激光退火提高多晶硅Tft再结晶迁移率的新方法

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664674

H. Kuriyama, S. Kiyama, T. Kuwahara, S. Noguchi, S. Nakano

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引用次数: 1

摘要

只提供摘要形式。对准分子激光退火再结晶的多晶硅薄膜进行了干法刻蚀后的扫描电镜研究。结果表明，采用低温(400℃)衬底加热方法，晶粒尺寸可扩大到300 nm左右。作者提出了一种低温(>)

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A New Method to Enhance Mobility of Poly-Si Tft Recrystallized by Excimer Laser Annealing

Summary form only given. A SEM study after dry etching was conducted for poly-Si films recrystallized by excimer laser annealing. It was found that the grain size could be enlarged to about 300 nm using the low-temperature (400 degrees C) substrate heating method. The authors propose a low-temperature ( >

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[1991] 49th Annual Device Research Conference Digest

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