2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)最新文献_第9页

The impact of minority carrier lifetime and carrier concentration on the efficiency of CIGS solar cell 少数载流子寿命和载流子浓度对CIGS太阳能电池效率的影响

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920786

M. Fathil, M. K. Md Arshad, U. Hashim, A. R. Ruslinda, R. Ayub, A. H. Azman, M. Nurfaiz, M. Z. Kamarudin, M. Aminuddin, A. Munir

引用次数: 12

Structural damage of Si-implanted in the In0.53Ga0.47As thin film si注入In0.53Ga0.47As薄膜的结构损伤

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920842

Muhammad Zulkhairi Roslan, D. Berhanuddin, M. A. Mohamed, M. F. Mohd Razip Wee, F. Larki, B. Majlis

引用次数: 0

An ultra-low power and area efficient 10 bit digital to analog converter architecture 超低功耗、面积效率高的 10 位数模转换器架构

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920858

Iffa Binti Sharuddin, L. Lee

引用次数: 8

Gold-free Cu-metallized III-V solar cell 无金铜金属化III-V型太阳能电池

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920866

Ching-Hsiang Hsu, Hsun-Jui Chang, H. Yu, Hong-Quan Nguyen, J. Ma, E. Chang

引用次数: 2

Dispersion characteristics of twisted clad chiral nihility fibers 扭曲包层手性纤维的色散特性

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920852

N. Iqbal, M. Baqir, P. Choudhury

引用次数: 0

Fabrication of a CMOS-compatible surface acoustic wave device for application in pathogen sensing 用于病原体传感的cmos兼容表面声波器件的制造

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920878

S. T. Ten, U. Hashim, F. Malek, W. Liu, K. L. Foo, C. Voon, F. H. Wee, Y. S. Lee, H. Hisham, A. Sudin, M. S. Nur Humaira

{"title":"Fabrication of a CMOS-compatible surface acoustic wave device for application in pathogen sensing","authors":"S. T. Ten, U. Hashim, F. Malek, W. Liu, K. L. Foo, C. Voon, F. H. Wee, Y. S. Lee, H. Hisham, A. Sudin, M. S. Nur Humaira","doi":"10.1109/SMELEC.2014.6920878","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920878","url":null,"abstract":"Surface acoustic waves (SAW) devices have been initially developed and used for the high-volume low-cost TV component. Due to the ultra-sensitivity to the surface perturbation, SAW based devices have been modified to be sensors. Initially, SAW based sensors were developed for gas detection and recently they have been moving towards biological detection. Shear horizontal surface acoustic wave (SHSAW), one of the SAW based type is most suitable for the application in liquid based condition. Ultra sensitive pathogen sensors are needed to improve the food security and quality of life as well. Hence, the ultra-high sensitive biosensor has been designed in this research towards the low concentration pathogen detection. One of the main SHSAW components is the interdigital transducer (IDT). Currently, there are variety of techniques to fabricate the accurate size electrodes, Electron beam lithography and X-ray lithography. However, these methods are very costly. Therefore, this paper is presenting the more economical fabrication process which is using complementary metal-oxide-semiconductor method to fabricate inter-digital transducers on 640 YX LiNbO3 piezoelectric substrate. Comparisons were made for the theoretical calculation and fabricated measurement resonant frequency of the 3μm, 8 μm, 12 μm, 25 μm and 20μm width IDTs and the differences obtained are less than 5%.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132594937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application 用于超灵敏生物传感器的垂直应变SiGe冲击电离MOSFET的表征

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920819

I. Saad, H. M. Zuhir, C. B. Seng, A. M. Khairul, B. Ghosh, N. Bolong, R. Ismail

{"title":"Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application","authors":"I. Saad, H. M. Zuhir, C. B. Seng, A. M. Khairul, B. Ghosh, N. Bolong, R. Ismail","doi":"10.1109/SMELEC.2014.6920819","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920819","url":null,"abstract":"This paper venture into prospective ideas of finding viable solution of nanoelectronics device design by an assessment of incorporating vertical impact-ionization MOSFET (IMOS) with strained SiGe technology into a formation of an emerging device structure with elevated performance and reliable outcomes for future bio-based sensor application. Impact Ionization FET biosensors can be extremely promising for applications where ultra-high sensitivity and fast response is desirable. An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Impact ionization MOSFET (IMOS) is expected to have a subthreshold swing (S) down to 20 mV/dec which is much lower compared to Conventional MOSFET (CMOS). This will eventually enhanced the switching behavior of the transistor and enhancing its electrical performance and response time particularly when scaled down into nanometre regime. However, vertical IMOS experience parasitic bipolar transistors (PBT) effect and low breakdown voltage. Parasitic Bipolar Transistor effect is a phenomenon where the MOSFET act as a minority carrier device like BJT instead of majority carrier device. This is not favorable for any power device or sensor. Dielectric Pocket (DP) is believed to be able to minimize the PBT effect while improving the performance of the device. Eventually, this device will prolong the increase density of transistor in a chip for future application of biosensor nanoelectronics.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125222746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electrical and optical properties characterization of MEH-PPV thin film using sol-gel method 溶胶-凝胶法表征MEH-PPV薄膜的电学和光学性质

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920897

H. Hashim, S. S. Shariffudin, A. Khairuddin, M. Sarah, M. Rusop

{"title":"Electrical and optical properties characterization of MEH-PPV thin film using sol-gel method","authors":"H. Hashim, S. S. Shariffudin, A. Khairuddin, M. Sarah, M. Rusop","doi":"10.1109/SMELEC.2014.6920897","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920897","url":null,"abstract":"Light-emitting diode (LED) applications consist of various materials. One of the materials used is polymer. In this study, MEH-PPV known as poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1, 4-phenylenevinylene] was used. The objective of this paper is to characterize the electrical and optical properties of MEH-PPV thin film by using sol-gel method. The scope is to study only the MEH-PPV thin film without implementation to any device. The MEH-PPV thin film thicknesses were varied from 10 to 100 nm. The experiment was started by stirring the sol-gel solution with toluene. The spin-coating technique was used to deposit the MEH-PPV thin film on a glass substrate. All samples were characterized using Atomic Force Microscopy (AFM), Surface Profiler, Two-point Probe, Raman PL Dispersive and UV-Vis Spectroscopy for the surface morphologies, thin film thickness, electrical and optical properties respectively. From the current-voltage (I-V) measurement, it show that symmetrical line plotted at low-voltage ranges. Moreover, the calculated conductivity was inversely proportional with the thin film thickness. The results from photoluminescence (PL) spectra showed that the intensity reached optimum peak at 38nm thickness and quenched for other samples. At 108 nm of thickness, absorption reached the highest peak compared to other samples of different thickness. The film was non-uniformed for the thickness at 134 nm, due to aggregation phenomenon.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127089320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A field-effect device based on an exfoliated thin film of few-layer graphene 一种基于少层石墨烯剥离薄膜的场效应装置

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920874

S. R. Kasjoo, M. M. Ramli, M. Zakaria, M. Arshad, R. Ayub, R. A. Rahim, U. Hashim

引用次数: 1

Electronic state transition in cooperatively interacting point-defects in semiconductor crystals 半导体晶体中协同作用点缺陷的电子态跃迁

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) Pub Date : 2014-10-13 DOI: 10.1109/SMELEC.2014.6920844

M. A. Mohamed, B. Majlis, M. Ani

引用次数: 0