Ceramics International最新文献

{"title":"Boosting thermoelectric performance of higher manganese silicide through Hf incorporation","authors":"Guangshu Li,&nbsp;Fuyuan Liu,&nbsp;Zhifeng Liu,&nbsp;Erkuo Yang,&nbsp;Huijun Kang,&nbsp;Zongning Chen,&nbsp;Enyu Guo,&nbsp;Tongmin Wang","doi":"10.1016/j.ceramint.2025.04.404","DOIUrl":"10.1016/j.ceramint.2025.04.404","url":null,"abstract":"<div><div>Higher manganese silicide (HMS, or MnSi_1.73, with <em>x</em> = 1.67–1.75) is a promising thermoelectric (TE) material renowned for its eco-friendly and cost-effective attributes. However, the TE performance of pristine HMS (<em>zT</em> ≈ 0.4) remains insufficient for practical applications due to its excessively high thermal conductivity. In this work, Hf-incorporated HMS (Mn_1-<em>x</em>Hf_<em>x</em>Si_1.73, with <em>x</em> = 0, 0.006, 0.007, and 0.008) was prepared by combining induction melting with spark plasma sintering. The Hf-rich phase formed in situ is identified as HfSi₂ using Cs-corrected high-resolution scanning transmission electron microscopy (HRSTEM). HRSTEM micrographs further reveal distinct intensity modulation of atomic columns in the HMS matrix. The enhanced power factor may result from the energy-filtering effect induced by the dispersed HfSi₂ inclusions, which selectively filter out low-energy carriers. The high interfacial thermal resistance, resulting from the significant difference in Debye temperatures between HfSi₂ inclusions and the HMS matrix, leads to a reduction in thermal conductivity from 3.10 W m⁻¹ K⁻¹ in pristine HMS to 2.22 W m⁻¹ K⁻¹ in the <em>x</em> = 0.007 sample at 823 K, representing a 28 % decrease. Owing to the decoupling of electronic and thermal transport properties, a <em>zT</em> of 0.63 at 823 K is realized for the <em>x</em> = 0.007 sample.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 32168-32174"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144748897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel ultra-broadband cyan phosphor with excellent thermal stability for full-spectrum WLED","authors":"Nana Jia ,&nbsp;Chengyu Cai ,&nbsp;Jianhao Li ,&nbsp;Qirui Zhu ,&nbsp;Cheng Gong ,&nbsp;Chuang Wang ,&nbsp;Shuangyu Xin","doi":"10.1016/j.ceramint.2025.04.407","DOIUrl":"10.1016/j.ceramint.2025.04.407","url":null,"abstract":"<div><div>Developing highly efficient cyan-emitting luminescent materials is essential to address the cyan gap in phosphor-converted white light-emitting diodes. In this paper, the cyan phosphors obtained by doping Eu²⁺ into Ba₅P₆O₂₀ matrix are used to bridge the gap. The distinct 5d-4f transitions in Eu²⁺ ions result in a wide cyan-emission spectrum (FWHM = 174 nm) under 350 nm radiation, achieving a high quantum efficiency. The best doping concentration within the Ba₅P₆O₂₀ is established at 1%, and the energy transfer mechanism is proved to be dipole-dipole interactions. Additionally, the emission intensity of the phosphor exhibits robust resistance to the temperature, maintaining 87.5% of the original intensity at 145 °C compared to its value at room temperature. In full-spectrum phosphor-converted white LEDs (WLEDs), the Ba₅P₆O₂₀: Eu²⁺ phosphor shines as a powerful blue-cyan component, transforming the way we experience light. Replacing blue and green light elements not only enhances illumination but also reduces harmful high-energy blue light, safeguarding our eye health for a brighter future. These findings indicate that Ba₅P₆O₂₀: Eu²⁺ has great potential as a cyan phosphor for full-spectrum WLEDs.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 32184-32191"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144748899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The impact of gamma irradiation on Cr-doped NiO:ITO thin films used in dielectric and optoelectronic applications","authors":"K. Jouini,&nbsp;A. Raouafi,&nbsp;M. Daoudi,&nbsp;W. Dridi","doi":"10.1016/j.ceramint.2025.04.359","DOIUrl":"10.1016/j.ceramint.2025.04.359","url":null,"abstract":"<div><div>This study investigates the effect of chromium doping and ionizing radiation on the physical properties of NiO thin films, which were sprayed onto ITO substrates at a temperature of 500 °C. The chromium doping effect was analyzed through structural, morphological, and optical measurements. Specifically, the X-ray diffraction (XRD) analysis showed that both irradiated and un-irradiated Cr-doped NiO exhibited a preferential orientation along the (111) plane. Notably, the incorporation of chromium demonstrated a decrease in crystallite size from 4.1932 Å to 4.1679 Å. Furthermore, the experimental results revealed that adding chromium reduced the intensity of diffraction peaks. In addition, gamma-ray irradiation induced a slight shift in XRD peaks. To complement these findings, Raman characterization indicated the emergence of a secondary phase, NiCr₂O₄. Additionally, the Cr-doped NiO thin films exhibited direct band gap energy values ranging from 3.49 to 3.93 eV. Interestingly, the band gaps of the irradiated Cr-doped NiO thin films were observed to be lower than those of un-irradiated films. Photoluminescence (PL) measurements proved the presence of peaks associated with electronic transitions of Ni²⁺ ions. Moreover, these measurements also revealed additional peaks corresponding to defects in the crystalline structure of NiO that were influenced by the Cr concentration. After irradiation, the PL spectra showed an ultraviolet activation region. Moreover, the improvement in PL intensity and dielectrics constants contributed to enhanced optoelectronic sensing properties of the films, thus opening up intriguing possibilities for their application in various fields.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31678-31691"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of trivalent acceptor ions size on the dielectric properties of donor-acceptor co-doped TiO2 single crystals","authors":"Lei Wang ,&nbsp;Yilin Wu ,&nbsp;Jinsheng Li ,&nbsp;Fengxu Li ,&nbsp;Xudong Liu ,&nbsp;Mu Zhang ,&nbsp;Xiaoguo Bi ,&nbsp;Xiaodong Li ,&nbsp;Mengjia Xu ,&nbsp;Xudong Sun","doi":"10.1016/j.ceramint.2025.04.332","DOIUrl":"10.1016/j.ceramint.2025.04.332","url":null,"abstract":"<div><div>Donor-acceptor co-doped TiO₂-based materials have attracted consideration attention because of their excellent dielectric properties, however, the effect of different acceptor ions on the dielectric properties of TiO₂ single crystals has been the subject of little study. In this paper, (Nb_0.5A_0.5)_{0.5 %}Ti_{99.5 %}O₂ (A = Ga, Sc, La, Nd) single crystals were prepared by the Verneuil method, and their dielectric properties were investigated. It was found that the dielectric properties of co-doped single crystals do not become superior with increasing radius of the doped ions as in the case of TiO₂ ceramic samples. In contrast, as the radius of the acceptor ion increases, the ions encounter greater difficulty in entering the TiO₂ lattice. In addition to electron-pinned defect-dipole (EPDD) polarization, hopping polarization occurs in (Nb_0.5Sc_0.5)_{0.5 %}Ti_{99.5 %}O₂ single crystal, while interfacial polarization occurs in (Nb_0.5La_0.5)_{0.5 %}Ti_{99.5 %}O₂ and (Nb_0.5Nd_0.5)_{0.5 %}Ti_{99.5 %}O₂ single crystals, both of which adversely affect the dielectric properties. In the (Nb_0.5Ga_0.5)_{0.5 %}Ti_{99.5 %}O₂ single crystal, the defect clusters of triangular structure <span><math><mrow><msup><msub><mtext>Ga</mtext><mn>2</mn></msub><mrow><mn>3</mn><mo>+</mo></mrow></msup><msup><msub><mi>V</mi><mi>O</mi></msub><mrow><mo>·</mo><mo>·</mo></mrow></msup><msup><mtext>Ti</mtext><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math></span> and diamond structure <span><math><mrow><msup><msub><mtext>Nb</mtext><mn>2</mn></msub><mrow><mn>5</mn><mo>+</mo></mrow></msup><msup><mtext>Ti</mtext><mrow><mn>3</mn><mo>+</mo></mrow></msup><msub><mi>X</mi><mtext>Ti</mtext></msub></mrow></math></span> (X = A³⁺/Ti³⁺/Ti⁴⁺) are interspersed with each other. This results in the formation of large defect dipole clusters, where EPDD polarization is the primary polarization mechanism and the optimal dielectric properties are obtained (ε′ = 1.003 × 10⁵, tanδ = 0.0342 under 1 kHz). This work contributes to a better understanding of the effects of diverse polarization mechanisms on the dielectric properties of TiO₂-based materials, thereby facilitation a more scientific design of TiO₂-based giant dielectric materials.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31430-31441"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Developing lightweight C/(Zr, Hf)C-SiC composite with broadband EMI shielding performance and structural stability using recycled carbon fibers","authors":"Xiangbao Lin ,&nbsp;Lei Zheng ,&nbsp;Xiaodong Wang ,&nbsp;Ping Xu ,&nbsp;Guobo Shen ,&nbsp;Dingrong Guo ,&nbsp;Ze Zhang ,&nbsp;Haonan Sun ,&nbsp;Yang Li ,&nbsp;Mingyu Zhang ,&nbsp;Qizhong Huang","doi":"10.1016/j.ceramint.2025.04.335","DOIUrl":"10.1016/j.ceramint.2025.04.335","url":null,"abstract":"<div><div>The latest generation of aerospace technologies demands more functional and structural capabilities from electromagnetic interference (EMI) shielding materials to cope with the issues of electromagnetic radiation and harsh environments. However, the large-scale production of multi-functional structural EMI shielding materials with superior load-bearing and oxidation resistance remains a significant challenge. In this work, the lightweight C/(Zr, Hf)C-SiC composite with EMI shielding performance and structural stability was fabricated by recycled carbon fibers (rCFs) combining carbide ceramics using precursor infiltration and pyrolysis method. The obtained composite exhibits a broadband EMI shielding effectiveness, primarily through absorption, achieving an EMI shielding of 85.81 dB in the X-band (thickness of 2 mm). The conductive network formed by rCFs contributes to more conductivity loss. Meanwhile, the (Zr, Hf)C-SiC hybrid nanocrystallines, serving as EMW absorbers without disrupting the conductive network, adjust the pore microstructure of the composite, thereby enhancing internal reflection, interfacial polarization, and dielectric loss. Moreover, the composite maintains a low density (1.08 g cm⁻³) and excellent structural stability, especially with a mass retention rate of 63.00 % after oxidation at RT-1400 °C. The filling and encapsulation of (Zr, Hf)C-SiC hybrid nanocrystallines are believed to contribute to enhanced stability. These findings demonstrate that C/(Zr, Hf)C-SiC EMI shielding materials are suitable for promising aerospace applications, providing several advantages such as lightweight, low-cost, and simple manufacturing processes.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31456-31465"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights into the effect of polishing tool patterns on surface integrity of 4H-SiC substrates in photoelectrochemical mechanical polishing","authors":"Yang Zhao,&nbsp;Renke Kang,&nbsp;Jiajian Feng,&nbsp;Yuewen Sun,&nbsp;Zhigang Dong,&nbsp;Shang Gao","doi":"10.1016/j.ceramint.2025.04.395","DOIUrl":"10.1016/j.ceramint.2025.04.395","url":null,"abstract":"<div><div>To balance the dual demands of high-quality, high-efficiency polishing and the preparation of ultra-smooth, damage-free surfaces for 4H-SiC substrates, a novel photoelectrochemical mechanical polishing (PECMP) method utilizing a polishing tool with through-holes is proposed. A kinematic model is developed to characterize the motion of the polishing tool relative to the substrate, and the influence of different through-hole distribution patterns on surface illumination uniformity is analyzed. Polishing experiments and surface/subsurface quality detection are conducted to evaluate the performance of PECMP employing a polishing tool with through-holes. The results demonstrate that the polishing tool with a phyllotactic through-hole arrangement enables uniform illumination across the 4H-SiC surface. After PECMP, the surface roughness of the 4H-SiC reaches approximately 0.13 nm, at a material removal rate of around 3.2 μm/h. Furthermore, surface/subsurface residual stresses are eliminated and no subsurface damage is observed. This work provides a novel approach for obtaining high-quality, efficient polishing of 4H-SiC, offering a promising solution for advanced semiconductor processing.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 32060-32072"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced fluorescence and stability of CsPbBr3 perovskite nanocrystals via MOF-5 encapsulation with hierarchical pore structures","authors":"Yiyuan Peng ,&nbsp;Mengbiao Liang ,&nbsp;Ting Chen ,&nbsp;Mengdi Zhao ,&nbsp;Zhixiang Xie ,&nbsp;Chunxian Guo","doi":"10.1016/j.ceramint.2025.04.374","DOIUrl":"10.1016/j.ceramint.2025.04.374","url":null,"abstract":"<div><div>All-inorganic perovskite nanocrystals (CsPbX₃ NCs, X = Cl, Br, I) have emerged as promising candidates for applications in light-emitting diodes (LEDs), solar cells, photodetectors, and backlight displays, owing to their exceptional optoelectronic properties, including high photoluminescence quantum yield (PLQY), long carrier lifetimes, and narrow emission bandwidths. However, the intrinsic ionic nature of these nanocrystals renders them highly susceptible to environmental degradation, limiting their practical applications. Herein, we report the synthesis of CsPbBr₃@MOF-5 composites through a physical mixing method: room-temperature supersaturated recrystallization of CsPbBr₃ NCs, followed by encapsulation within a hierarchical porous zinc-based metal-organic framework (MOF-5). By incorporating poly(ethylene oxide)-block-poly(propyleneoxide)-block-poly(ethylene oxide) Pluronic (P123) and 1,3,5-trimethylbenzene (TMB) as structure-directing agents, the pore architecture of MOF-5 was tailored to exhibit hierarchical porosity (2–35 nm), significantly enhancing both the PLQY and stability of CsPbBr₃ NCs. The CsPbBr₃@MOF-5 composites achieved a remarkable PLQY improvement from 22 % to 56 %, retained 55 % of their initial PL intensity after 60 days of ambient storage, and maintained 65 % of PL emission under thermal stress (298–498 K). In contrast, pristine CsPbBr₃ NCs experienced complete quenching under identical conditions. Additionally, the composite exhibited superior resistance to anion exchange when combined with CsPbBr_xI_3-x NCs. A white LED (WLED) device fabricated using CsPbBr₃@MOF-5 composite and K₂SiF₆:Mn²⁺ (KSF) red phosphor exhibited a luminous efficiency of 20.71 lm/W, a correlated color temperature (CCT) of 5486 K, and a broad color gamut covering 133.3 % of the National Television Standards Committee (NTSC) standard, underscoring its potential for advanced lighting and display technologies.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31818-31827"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Significantly enhanced energy storage performance of BaTiO3-based amorphous thin films through the synergistic function of variable valence ions","authors":"Yiming Yao ,&nbsp;Cheng Tao ,&nbsp;Rui Huang ,&nbsp;Jian Zhang ,&nbsp;Tianyu Zhang ,&nbsp;Hua Hao ,&nbsp;Zhonghua Yao ,&nbsp;Hanxing Liu ,&nbsp;Minghe Cao","doi":"10.1016/j.ceramint.2025.04.375","DOIUrl":"10.1016/j.ceramint.2025.04.375","url":null,"abstract":"<div><div>Amorphous thin films have been widely studied due to the excellent breakdown strength in recent years. However, their practical application faces significant challenges primarily caused by low polarization and energy density. Herein, we propose a multi-variable valence ions doping strategy to enhance the energy storage performance of BaTiO₃-based amorphous thin films. The Ba_0.92Bi_0.08Ti_1-x(Ni_0.5Mn_0.5)_xO₃(BBTNM) amorphous thin films were fabricated by chemical solution deposition method. In addition, the synergistic effects of variable valence ions (Ni, Mn) on the microstructure, dielectric and energy storage properties of the films were systematically studied. Compared with the undoped Ba_0.92Bi_0.08TiO₃(BBT) film, the polarization and energy storage performance of the BBTNM film have been significantly improved owing to the defect dipoles generated by the incorporation of variable valence ions. Notably, a high discharge energy density of 93.3 J/cm³ together with an energy efficiency of 83 % could be achieved in the x = 0.08 film at 7.05 MV/cm. Simultaneously, the film exhibits excellent thermal stability within the range of 20 °C–160 °C, and still maintains favorable performance after 10⁵ cycles. Overall, this work introduces a new approach for designing BaTiO₃-based thin film materials.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31828-31835"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Selective leaching of metal components from the spent LiFePO4 cathode material using (NH4)2S2O8","authors":"Yucai Zhang ,&nbsp;Ziwei Gao ,&nbsp;Zhi Su","doi":"10.1016/j.ceramint.2025.04.384","DOIUrl":"10.1016/j.ceramint.2025.04.384","url":null,"abstract":"<div><div>With the massive use of electric vehicles, spent electrode materials with no application value pose a serious threat to resource reserves and ecosystems. Consequently, recycling the spent electrode materials appears to be imminent. This study considered that lithium iron phosphate (LiFePO₄) within a water-stabilized voltage could undergo ionic leaching. Ammonium persulfate [(NH₄)₂S₂O₈], which has a high electrode potential, was used for selective leaching of the metal components from the spent LiFePO₄ material. The effects of leaching temperature, time, and the solid-liquid ratio on the leaching effect were investigated. Under optimized conditions, 99.2 % of Li in the spent LiFePO₄ could be leached effectively. The leaching reaction belonged to the typical chemical reaction control, and LiFePO₄ was converted to FePO₄ as Li⁺ was continuously leached into the solution. The leaching of the spent LiFePO₄ using (NH₄)₂S₂O₈ did not require additional acids or bases to adjust the acidity of the solution, ensuring that the solution had a stable voltage. This strategy predicted that the selective leaching of metal components from the spent LiFePO₄ material could be enhanced using (NH₄)₂S₂O₈, providing a certain basis for wet recovery in aqueous systems.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31941-31948"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144749335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-pressure synthesis via glass and photoluminescence properties of BaGe2O5 III-type SrSi2O5:Eu2+ with 12-coordinated Sr2+ site","authors":"Takumi Kitahara ,&nbsp;Takuya Sasaki ,&nbsp;Genki Saito ,&nbsp;Ken Niwa ,&nbsp;Masashi Hasegawa","doi":"10.1016/j.ceramint.2025.04.317","DOIUrl":"10.1016/j.ceramint.2025.04.317","url":null,"abstract":"<div><div>BaGe₂O₅ III-type SrSi₂O₅:Eu²⁺ in which the Sr²⁺ site is 12-coordinated, the highest coordination number among strontium silicates, has been successfully synthesized under high pressure and temperature, 16 GPa and 900 °C for 60 min using an almost glassy starting sample. It is found that the glassy state of the starting sample is much more useful to form SrSi₂O₅:Eu²⁺ under high temperature and pressure compared to conventional solid-state reaction using a crystalline multiphase starting sample. Photoluminescence and cathodoluminescence of the SrSi₂O₅:Eu²⁺ major-phase sample have been investigated in the ambient temperature and pressure conditions. SrSi₂O₅:Eu²⁺ exhibits an emission peak at 379 nm which is shorter than those of the reported Eu²⁺-activated strontium silicate phosphors such as Sr₃SiO₅:Eu²⁺, Sr₂SiO₄:Eu²⁺, and SrSiO₃:Eu²⁺. This is attributable to the cuboctahedral coordination of SrO₁₂, i.e., EuO₁₂ in the BaGe₂O₅ III-type SrSi₂O₅:Eu²⁺, which is more isotropic due to the higher coordination number of the Eu²⁺-site than those of other phosphors and results in reducing the crystal field splitting of the 5d level of Eu²⁺.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 20","pages":"Pages 31299-31304"},"PeriodicalIF":5.6,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144748548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}