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2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits最新文献

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Real time identification of contaminants in assembly and test 实时识别组装和测试中的污染物
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306261
C. Basilio
{"title":"Real time identification of contaminants in assembly and test","authors":"C. Basilio","doi":"10.1109/IPFA.2012.6306261","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306261","url":null,"abstract":"The accuracy and speed of identification of organic foreign contaminants has always been a major challenge faced by every Assembly and Test factory. The current method of analyzing this failure through FTIR (Fourier Transform Infrared (spectroscopy) analysis is a tedious and difficult process. Interpretation of the FTIR result is also complicated. Alternative method using visual analysis is subjective and inaccurate. These challenges apparently impact the through put time of analysis and the accuracy of result. The best known method described on this paper involved the creation of assembly and test materials infrared spectrum library through the use of FTIR. Improvement in the Yield and accuracy of FM (foreign material) identification, analysis TPT (through put time) and effective root cause fix were achieved using this new technique.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126551409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Capacitor dendrite failure analysis for lidless CPU testing 无盖CPU测试电容器枝晶失效分析
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306253
H. Weidong, Yu Changhong, Cui Cimi, Dolphin Zuo, G. Hongwei, Chris Xie, A. Majed
{"title":"Capacitor dendrite failure analysis for lidless CPU testing","authors":"H. Weidong, Yu Changhong, Cui Cimi, Dolphin Zuo, G. Hongwei, Chris Xie, A. Majed","doi":"10.1109/IPFA.2012.6306253","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306253","url":null,"abstract":"One lidless CPU product failed more than 20% of visual inspections due to foreign material near the capacitor electrodes during testing production. This paper presents the analysis method for the foreign material, formation mechanism of dendrites, verification experiment by DOE, root cause for this case, and corrective solutions.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121954068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of failure mechanisms of ESD GGNFET subjected to VFTLP robustness and reliability tests ESD GGNFET在VFTLP鲁棒性和可靠性试验中的失效机理比较
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306320
W. H. Lai, C. K. Koh, B. S. Khoo, Y. Chen, S. Y. Chow
{"title":"Comparison of failure mechanisms of ESD GGNFET subjected to VFTLP robustness and reliability tests","authors":"W. H. Lai, C. K. Koh, B. S. Khoo, Y. Chen, S. Y. Chow","doi":"10.1109/IPFA.2012.6306320","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306320","url":null,"abstract":"An ESD GGNFET was swept with increasing voltage to failure using VFTLP. Another sample was stressed to 65% of the Vt2 obtained in the first test. The second sample failed after a large enough number of sweeps. The difference in the failure mechanisms for these two samples is reported for the first time.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115909165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fault isolation challenges and opportunities for proximal-probe imaging 近端探针成像的故障隔离挑战和机遇
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306328
D. Vallett
{"title":"Fault isolation challenges and opportunities for proximal-probe imaging","authors":"D. Vallett","doi":"10.1109/IPFA.2012.6306328","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306328","url":null,"abstract":"This paper will discuss how continued resolution scaling of present far-field optical, thermal and magnetic fault isolation methods applied through backside silicon is unsustainable. The `search areas' resulting remain too large for the high-resolution electrical characterization and physical imaging required for conclusively identifying defects at advanced technology nodes. The need for improved nanoscale fault isolation is presented based on a growing class of proximal probe measurements operating in or approximating the near-field.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133891916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of electrochemical migration on fine pitch BGA package 小间距BGA封装的电化学迁移研究
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306272
Yi Heng Chen, M. Hsiao
{"title":"Investigation of electrochemical migration on fine pitch BGA package","authors":"Yi Heng Chen, M. Hsiao","doi":"10.1109/IPFA.2012.6306272","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306272","url":null,"abstract":"Electrochemical migration (ECM) is proved from electrochemical phenomenon involving the transport of metal ions under voltage and an electrolyte. We studied metal migration phenomenon, generation mechanism and root cause on fine pitch BGA package product. Electrical detection failures caused by excessive leakage current phenomenon after HAST stress. The leakage current result caused by electrochemical migration between two solder bumps that are with respect to surface of package substrate from ionic contamination. We considered that moisture combined with particular ion impurities causing electrochemical migration phenomenon during HAST stress. Both failure analyses and repeatability experiment results of HAST are reported.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115767592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
TID characterization of 0.13µm SONOS cell in 4Mb NOR flash memory 4Mb NOR闪存中0.13µm SONOS单元的TID表征
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306287
Fengying Qiao, Xiao Yu, L. Pan, Haozhi Ma, Dong Wu, Jun Xu
{"title":"TID characterization of 0.13µm SONOS cell in 4Mb NOR flash memory","authors":"Fengying Qiao, Xiao Yu, L. Pan, Haozhi Ma, Dong Wu, Jun Xu","doi":"10.1109/IPFA.2012.6306287","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306287","url":null,"abstract":"In this paper, we investigate the TID response of 0.13μm SONOS cell with different charge states up to 2 Mrad(Si) and propose an improved model. Additionally, radiation experiment results show that IRD increase is the main reason for read error in the fabricated 4Mb flash memory chip.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"11 s2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120835774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Advanced SEM/SPM microscopy 先进的SEM/SPM显微镜
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306335
R. Heiderhoff
{"title":"Advanced SEM/SPM microscopy","authors":"R. Heiderhoff","doi":"10.1109/IPFA.2012.6306335","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306335","url":null,"abstract":"Advanced SEM/SPM microscopy will expand the application fields in failure analysis and reliability investigation, because the recognition of defects and their subsequent characterization have to be carried out with highest spatial resolution to ensure that even smallest structures with modified material properties can be evaluated. Promising for future applications is the fact that the used probes simultaneously can either be used as sensors, giving access to a vast variety of material properties, or as actuators, which can deliberately modify samples properties.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128460395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Copper wirebond package decapsulation technique using mixed acid chemistry 混合酸化学铜线键封装解封装技术
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306250
S. W. Ng, Hong Bo Zhang, K. Liew, W. Lee, R. Lin
{"title":"Copper wirebond package decapsulation technique using mixed acid chemistry","authors":"S. W. Ng, Hong Bo Zhang, K. Liew, W. Lee, R. Lin","doi":"10.1109/IPFA.2012.6306250","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306250","url":null,"abstract":"Copper (Cu) wirebond technology in IC packaging has become popular these days due to its better characteristic and cost compare to Gold (Au). Nonetheless, failure analysis remains to be very challenging as Cu is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. Hence, by utilizing enhanced manual decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at low temperature, successful Cu wire package decapsulation happen to be reproducible mainly for die level failure analysis purposes.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131725386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Failure analysis on multilayer ceramic capacitor (MLCC) with leakage failure caused by silver (Ag) migration in molded plastic package 银(Ag)在模塑封装中迁移引起的多层陶瓷电容器(MLCC)泄漏失效分析
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306260
K. K. Ng, M. Rajaratnam
{"title":"Failure analysis on multilayer ceramic capacitor (MLCC) with leakage failure caused by silver (Ag) migration in molded plastic package","authors":"K. K. Ng, M. Rajaratnam","doi":"10.1109/IPFA.2012.6306260","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306260","url":null,"abstract":"Various analysis techniques inclusive cross section, parallel grinding, package decapsulation, SEM and EDX had been performed to determine the cause of high leakage on MLCC samples. At the end, analysis method combining the mechanical cracking and laser ablation was successfully pin point the failure was due to Ag migration at the external package of MLCC.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126229770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Phase and microstructure analysis by electron diffraction in semiconductor failure analysis 半导体失效分析中的电子衍射相与微观结构分析
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2012-07-02 DOI: 10.1109/IPFA.2012.6306252
Binghai Liu, Zhiqiang Mo, Q. Lei, S. S. Seah, Chen Ye, Lee Gek Li, C. Changqing, C. K. Oh
{"title":"Phase and microstructure analysis by electron diffraction in semiconductor failure analysis","authors":"Binghai Liu, Zhiqiang Mo, Q. Lei, S. S. Seah, Chen Ye, Lee Gek Li, C. Changqing, C. K. Oh","doi":"10.1109/IPFA.2012.6306252","DOIUrl":"https://doi.org/10.1109/IPFA.2012.6306252","url":null,"abstract":"In this work, electron diffraction techniques were employed for the physical failure analysis of two fab issues. Together with other TEM imaging and microanalysis techniques, electron diffraction techniques enabled us to successfully characterize the phase and microstructures of the defective structures. For the first issue, the identification of tungsten oxide by selected-area electron diffraction analysis revealed the issue with the oxidation of N+ W contact due to the galvanic corrosion effects during CMP processes. For the second one, power MOS Vramp issue, STEM-NBD (nanobeam electron diffraction) line scan analysis showed the evidence of defective microstructure in the abnormal active region, which was further verified by HRTEM analysis. The dislocation arrays in the abnormal active may account for the early breakdown the failed device.","PeriodicalId":267457,"journal":{"name":"2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126019173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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