2021 13th Spanish Conference on Electron Devices (CDE)最新文献

Study of magnetoelastic resonance for chemical sensors: Ribbons vs microwires 化学传感器的磁弹性共振研究:带与微线

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455747

Álvaro Peña, D. Matatagui, C. Cruz, P. de la Presa, P. Marín, Carmen Horrillo

引用次数: 1

Analysis of traps-related effects hindering GFETs performance 阻碍gfet性能的陷阱相关效应分析

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455722

A. Pacheco-Sánchez, N. Mavredakis, P. C. Feijoo, D. Jiménez

{"title":"Analysis of traps-related effects hindering GFETs performance","authors":"A. Pacheco-Sánchez, N. Mavredakis, P. C. Feijoo, D. Jiménez","doi":"10.1109/CDE52135.2021.9455722","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455722","url":null,"abstract":"The effect of traps on DC and high-frequency behavior of a short channel single-layer graphene field-effect transistor (GFET) is discussed thoroughly in the present work. Trap-induced hysteresis is evident when a standard staircase measurement technique is applied while it is diminished when an opposing-pulse method is used. In both cases, forward and backward gate voltage (VGS) sweeps are utilized. A recently proposed analytical compact model accounting for traps activated both by vertical electric field and high-lateral electric field enabled by hot carriers, is accurately validated with both trap-affected and trap-reduced data. Important high-frequency figures of merit (FoM) such as cut-off and maximum oscillation frequencies as well as the intrinsic gain of the GFET under test, are also derived from the model, and exhibit a strong trap dependence through the DC operating point of the device. These FoM not only demonstrate VGS shifts, but also, they exhibit magnitude alterations due to traps impact even when the Dirac voltage of the GFET under test coincides in both forward and backward staircase measurement schemes.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114922280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Light-trapping improvement of limited-quality silicon wafers for silicon heterojunction solar cell applications 应用于硅异质结太阳能电池的有限质量硅片的光捕获改进

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455743

R. Barrio, D. Canteli, N. González, I. Torres, A. Márquez, C. Molpeceres, J. J. Gandía

{"title":"Light-trapping improvement of limited-quality silicon wafers for silicon heterojunction solar cell applications","authors":"R. Barrio, D. Canteli, N. González, I. Torres, A. Márquez, C. Molpeceres, J. J. Gandía","doi":"10.1109/CDE52135.2021.9455743","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455743","url":null,"abstract":"Laser-based surface texturing treatments have been investigated as a promising option for innovative low-cost concepts to improve the light absorption of silicon heterojunction solar cells manufactured from unconventional silicon wafers. A great advantage of using a laser as a processing tool is its high precision, which lead to selected and well-controlled morphologies. This is a particularly interesting feature for multicrystalline silicon wafers, where the large number of grain boundaries makes it difficult to obtain high light-trapping morphologies by other methods. The investigations described in this work include testing different patterns on the wafer surface in order to define the best morphology to improve the light absorption. A significant decrease in reflectance (R<9%) has been achieved by direct-laser texturization and has been compared with acid-chemical etching with average reflectance above 20%. This result suggests the enormous potential of direct laser texturization for this type of wafers, without chemical residues and its easy incorporation to the manufacturing of low-cost silicon heterojunction solar cells.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Proton Low Gain Avalanche Detector (pLGAD) for Low Energy Particles Detection 质子低增益雪崩探测器(pLGAD)用于低能粒子探测

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455752

A. Doblas, W. Khalid, D. Flores, S. Hidalgo, G. Pellegrini, M. Valentan

引用次数: 0

eHealth system with ISFET-based immunosensor for heart failure biomarker detection in saliva 基于isfet免疫传感器的唾液心力衰竭生物标志物检测电子健康系统

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455749

A. Alcacer, Hamdi Ben Halima, Marie Hangouet, Hamid Elaissari, A. Errachid, J. Bausells

引用次数: 0

Energy Based Analysis of ReRAM Reset Transition Memristive Devices 基于能量的ReRAM复位过渡记忆器件分析

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455732

M. M. Al Chawa, R. Tetzlaff, S. Stavrinides, C. de Benito, R. Picos

引用次数: 0

Resistive gas sensors based on MoS2 nanosheets with high response to low NO2 concentrations 基于二硫化钼纳米片的电阻式气体传感器，对低NO2浓度具有高响应

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455718

I. Sayago, C. Sánchez-Vicente, J. Sanjurjo, J.P. Santos, S. Ogilvie, H. J. Wood, A. A. Graf, M. Large, A. Dalton, R. Garriga, E. Muñoz

引用次数: 0

ZnO Nanorods and Their Modification with Au Nanoparticles for UV-light Activated Gas Sensing 紫外光活化气体传感用氧化锌纳米棒及其金纳米颗粒修饰

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455726

M. Tomić, I. Gràcia, E. Figueras, C. Cané, S. Vallejos

引用次数: 0

Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes 氮化镓自开关二极管低温下表面电荷的偏置依赖性

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455737

E. Pérez-Martín, I. Íñiguez-de-la-Torre, T. González, C. Gaquière, J. Mateos

引用次数: 0

Laser Fired Contacts in multicrytalline silicon solar cells 多晶硅太阳能电池中的激光发射触点

2021 13th Spanish Conference on Electron Devices (CDE) Pub Date : 2021-06-09 DOI: 10.1109/CDE52135.2021.9455742

R. Barrio, D. Canteli, I. Torres, S. Fernández, Marina de la Cruz, C. Molpeceres, J. J. Gandía

{"title":"Laser Fired Contacts in multicrytalline silicon solar cells","authors":"R. Barrio, D. Canteli, I. Torres, S. Fernández, Marina de la Cruz, C. Molpeceres, J. J. Gandía","doi":"10.1109/CDE52135.2021.9455742","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455742","url":null,"abstract":"The roadmap for the development of silicon solar cells requires the introduction of passivating contacts to obtain higher efficiencies as well as to reduce the cost of production to be industrially implemented. In this context, Laser Fired Contact (LFC) on p-type silicon wafers have been shown to be an effective technique to improve efficiencies, due to their ability to reduce recombination losses on the back surface of crystalline silicon solar cells. These studies have mainly focused on high quality monocrystalline silicon wafers and there are not enough developments made with multicrystalline silicon (mc-Si) wafers. Therefore, in this work, we present the optimization of the LFC process on p-type mc-Si and its application to two types of silicon devices: diffusion and heterojunction solar cells. These rear contacts have led to improved efficiencies for both types of solar cells over similar devices with thermalized aluminum rear contacts and without back passivation. These results illustrate the enormous potential of these localized laser-contacts created for mc-Si solar cells, perfectly compatible with a lower cost industrial production.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114249385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0