Light-trapping improvement of limited-quality silicon wafers for silicon heterojunction solar cell applications

R. Barrio, D. Canteli, N. González, I. Torres, A. Márquez, C. Molpeceres, J. J. Gandía
{"title":"Light-trapping improvement of limited-quality silicon wafers for silicon heterojunction solar cell applications","authors":"R. Barrio, D. Canteli, N. González, I. Torres, A. Márquez, C. Molpeceres, J. J. Gandía","doi":"10.1109/CDE52135.2021.9455743","DOIUrl":null,"url":null,"abstract":"Laser-based surface texturing treatments have been investigated as a promising option for innovative low-cost concepts to improve the light absorption of silicon heterojunction solar cells manufactured from unconventional silicon wafers. A great advantage of using a laser as a processing tool is its high precision, which lead to selected and well-controlled morphologies. This is a particularly interesting feature for multicrystalline silicon wafers, where the large number of grain boundaries makes it difficult to obtain high light-trapping morphologies by other methods. The investigations described in this work include testing different patterns on the wafer surface in order to define the best morphology to improve the light absorption. A significant decrease in reflectance (R<9%) has been achieved by direct-laser texturization and has been compared with acid-chemical etching with average reflectance above 20%. This result suggests the enormous potential of direct laser texturization for this type of wafers, without chemical residues and its easy incorporation to the manufacturing of low-cost silicon heterojunction solar cells.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 13th Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE52135.2021.9455743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Laser-based surface texturing treatments have been investigated as a promising option for innovative low-cost concepts to improve the light absorption of silicon heterojunction solar cells manufactured from unconventional silicon wafers. A great advantage of using a laser as a processing tool is its high precision, which lead to selected and well-controlled morphologies. This is a particularly interesting feature for multicrystalline silicon wafers, where the large number of grain boundaries makes it difficult to obtain high light-trapping morphologies by other methods. The investigations described in this work include testing different patterns on the wafer surface in order to define the best morphology to improve the light absorption. A significant decrease in reflectance (R<9%) has been achieved by direct-laser texturization and has been compared with acid-chemical etching with average reflectance above 20%. This result suggests the enormous potential of direct laser texturization for this type of wafers, without chemical residues and its easy incorporation to the manufacturing of low-cost silicon heterojunction solar cells.
应用于硅异质结太阳能电池的有限质量硅片的光捕获改进
基于激光的表面纹理处理已经被研究作为一种有前途的低成本创新概念的选择,以改善由非常规硅片制造的硅异质结太阳能电池的光吸收。使用激光作为加工工具的一个很大的优点是它的高精度,这导致选择和良好控制的形态。对于多晶硅晶圆来说,这是一个特别有趣的特征,其中大量的晶界使得通过其他方法难以获得高的光捕获形态。本研究包括在晶圆表面测试不同的图案,以确定最佳的形貌,以提高光吸收。与平均反射率在20%以上的酸化学蚀刻相比,直接激光织构可以显著降低材料的反射率(R<9%)。这一结果表明,这种类型的硅片的直接激光纹理化具有巨大的潜力,没有化学残留物,并且易于与低成本硅异质结太阳能电池的制造相结合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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