Proceedings of the 2014 IEEE Students' Technology Symposium最新文献_第8页

Single access point based indoor localization technique for augmented reality gaming for children 基于单接入点的儿童增强现实游戏室内定位技术

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 2014-02-01 DOI: 10.1109/TECHSYM.2014.6808052

C. P. Kumar, R. Poovaiah, Ajanta Sen, Priya Ganadas

{"title":"Single access point based indoor localization technique for augmented reality gaming for children","authors":"C. P. Kumar, R. Poovaiah, Ajanta Sen, Priya Ganadas","doi":"10.1109/TECHSYM.2014.6808052","DOIUrl":"https://doi.org/10.1109/TECHSYM.2014.6808052","url":null,"abstract":"In this paper we discuss our attempt to solve the problem of Indoor Localization for a game intended to enhance learning among children by involving them in `learning' along with `play'. The first part of the paper describes our methodology towards the construction of the Augmented Reality Game for enhancing astronomy learning in children, emphasizing the experiential nature of tangible interactions and the remote dimension which the game can take, due to the available social media tools, by bringing people into a virtual 3D space to interact with each other. To keep the game simple and less complicated, we employ Single Access Point based Indoor Localization technique for tracking players. In the latter part of the paper we discuss the Indoor Localization system being implemented to track real time location of the player in his/her physical environment and the same being mapped on a virtual game arena for facilitating remote play dimension. Technologies used for early prototype: - basic optics for creating a device that gives 3D illusion of celestial objects appearing on 2D screen, a Kinect-sensor environment, and potentiometer for interactions. Technologies for the game being currently developed: augmented and virtual reality elements, indoor position tracking using Kalman filter implemented inertial navigation system, with Wi-Fi RSSI data, onboard sensory data, geo-tagging.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129420226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 35

Effective approach for iris localization in nonideal imaging conditions 非理想成像条件下虹膜定位的有效方法

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 2014-02-01 DOI: 10.1109/TECHSYM.2014.6808054

Yogita Parikh, U. Chaskar, Harshal Khakole

引用次数: 11

Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001) 纵向电场和通道自热对蓝宝石上AlGaN/GaN HEMT线性度和增益的影响(0001)

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 2014-02-01 DOI: 10.1109/TECHSYM.2014.6808083

A. Bag, P. Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, S. M. Dinara, S. Kabi, A. Chakraborty, D. Biswas

引用次数: 2

Weak GNSS signal acquisition using prolate spheroid wave function based compressive sensing 基于压缩感知的长球面波函数微弱GNSS信号采集

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 2014-02-01 DOI: 10.1109/TECHSYM.2014.6808053

Tamesh Halder, A. Bhattacharya

引用次数: 1

Analog circuit performance of high mobility ultrathin-body InAsSb-on-insulator MOSFETs 高迁移率超薄体InAsSb-on-insulator mosfet模拟电路性能

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 2014-02-01 DOI: 10.1109/TECHSYM.2014.6808084

S. Bhattacherjee, A. Biswas

引用次数: 2

Cluster-based Myopic and Non-myopic scheduling for Wireless Sensor Network 基于集群的无线传感器网络近视与非近视调度

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 1900-01-01 DOI: 10.1109/TECHSYM.2014.6807925

D. Mantri, P. Pawar, N. Prasad, R. Prasad

引用次数: 5

Parameters optimization of Lateral impact ionization MOS (LIMOS) 横向碰撞电离MOS (LIMOS)参数优化

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 1900-01-01 DOI: 10.1109/TechSym.2014.6808079

Ankit Dixit, Sangeeta Singh, P. Kondekar, Pankaj Kumar

{"title":"Parameters optimization of Lateral impact ionization MOS (LIMOS)","authors":"Ankit Dixit, Sangeeta Singh, P. Kondekar, Pankaj Kumar","doi":"10.1109/TechSym.2014.6808079","DOIUrl":"https://doi.org/10.1109/TechSym.2014.6808079","url":null,"abstract":"Impact Ionization MOSFET (IMOS), has emerged to combat one of the most critical and fundamental problem of sub-threshold slope (SS) which cannot be lower than 60mV/decade at room temperature for conventional MOSFET, as conventional MOSFET works on the principle of diffusion of charge carrier for the current flow in the device. Whereas, the IMOS devices work on the principle of avalanche breakdown to switch from the `OFF' state to `ON' state. In this paper, we have optimized the device performance of the Lateral impact ionization MOSFET (LIMOS) by varying the device dimensional parameters, such as gate length Lg, intrinsic length Lin, gate dielectric thickness tox and biasing voltages Vg and Vs. Simulation results claims that the ratio of Lg/Lin has to be properly tuned for the optimum device performance. If this ratio approaches to one LIMOS performance are optimized, whereas if it is very higher than one it behaves as Tunnel Field Effect Transistor (TFET) and if it is very less than one it effectively behaves as gated PIN diode. Simulation results show the sub-threshold slope SS to be 1.373mV/dec for our optimized LIMOS. Considerable improvement in other device performance parameters namely Ion, Ioff, Ion/Ioff ratio, threshold voltage V th, breakdown voltage Vbr, drain induced current enhancement DICE, and gate induced barrier lowering GIBL has been reported.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123466295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0