纵向电场和通道自热对蓝宝石上AlGaN/GaN HEMT线性度和增益的影响(0001)

Proceedings of the 2014 IEEE Students' Technology Symposium Pub Date : 2014-02-01 DOI:10.1109/TECHSYM.2014.6808083

A. Bag, P. Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, S. M. Dinara, S. Kabi, A. Chakraborty, D. Biswas

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引用次数: 2

摘要

研究了蓝宝石衬底上AlGaN/GaN HEMT的线性度和增益随漏极偏置和栅极偏置的变化。随着漏极偏置的增加，线性度增加，器件的最大增益降低。更多声子的产生及其相关的电子散射降低了载流子的迁移率。进一步减小了2DEG通道上高纵场的漏极电流。

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Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.

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Proceedings of the 2014 IEEE Students' Technology Symposium

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