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2014 IEEE MTT-S International Microwave Symposium (IMS2014)最新文献

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A 250W LDMOS Doherty PA with 31% of fractional bandwidth for DVB-T applications 250W LDMOS Doherty PA，带宽为DVB-T应用的31%
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848331
N. Giovannelli, A. Cidronali, P. Singerl, S. Maddio, C. Schuberth, Andrea Del Chiaro, G. Manes
{"title":"A 250W LDMOS Doherty PA with 31% of fractional bandwidth for DVB-T applications","authors":"N. Giovannelli, A. Cidronali, P. Singerl, S. Maddio, C. Schuberth, Andrea Del Chiaro, G. Manes","doi":"10.1109/MWSYM.2014.6848331","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848331","url":null,"abstract":"We discuss the development of a wideband LDMOS Doherty PA (DPA) with optimized peak power and efficiency over 550 MHz to 770 MHz of bandwidth. The design was enabled by a wideband output combiner which involves multisection impedance transformation. The DPA delivers more than 46% average efficiency across the band at 48 dBm average power supporting DVB-T signal with 8 MHz bandwidth and PAPR of 10.5 dB. The DPA prototype achieves the target ACPR of - 50 dBc at the upper limit of the bandwidth if digital predistortion is applied.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115417161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Design and analysis of a low-profile 28 GHz beam steering antenna solution for Future 5G cellular applications 面向未来5G蜂窝应用的低姿态28ghz波束转向天线解决方案设计与分析
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848377
W. Hong, K. Baek, Youngju Lee, Yoongeon Kim
{"title":"Design and analysis of a low-profile 28 GHz beam steering antenna solution for Future 5G cellular applications","authors":"W. Hong, K. Baek, Youngju Lee, Yoongeon Kim","doi":"10.1109/MWSYM.2014.6848377","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848377","url":null,"abstract":"A first-of-the-kind 28 GHz antenna solution for the upcoming 5G cellular communication is presented in detail. Extensive measurements and simulations ascertain the proposed 28 GHz antenna solution to be highly effective for cellular handsets operating in realistic propagating environments.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121017648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 150
Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end 采用可重构射频前端的相变材料开发大功率1欧姆以下DC-67 GHz射频开关
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1117/12.2059323
J. Moon, H. Seo, D. Le
{"title":"Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end","authors":"J. Moon, H. Seo, D. Le","doi":"10.1117/12.2059323","DOIUrl":"https://doi.org/10.1117/12.2059323","url":null,"abstract":"We report GeTe-based phase change material RF switches with on-state resistance of 0.07 ohm*mm and off-state capacitance of 20 fF/mm. The RF switch figure-of-merit, Ron*Coff is comparable to RF MEMS ohmic switches. The PCM RF shunt and series switches were fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. In a shunt switch configuration, isolation of 30 dB was achieved up to 67 GHz with return loss of 15 dB. RF power handling was tested with ~10 W for series and 3 W for shunt configurations. Harmonic powers were suppressed more than 100 dBc at fundamental power of 1 W, for future tunable and reconfigurable RF technology.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127305383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Modeling RF behavior of graphene up to 67GHz 高达67GHz的石墨烯射频行为建模
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848365
Zhijian Pan, X. Ji, Miao Li, Ye Zuochang, Yan Wang
{"title":"Modeling RF behavior of graphene up to 67GHz","authors":"Zhijian Pan, X. Ji, Miao Li, Ye Zuochang, Yan Wang","doi":"10.1109/MWSYM.2014.6848365","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848365","url":null,"abstract":"Carbon-based materials have emerged as next generation electronic materials for device applications. In this work, radio-frequency behavior of square graphene is studied and characterized up to 67GHz. After an elaborate de-embedding process in which four dummy structures and three steps are employed, a new two-port physical-based equivalent circuit model is proposed and verified. It is estimated that square graphene has about 200 times larger inductance than square metal with nearly the same quality factor and thus a graphene ribbon consisting of pieces of square graphene aligning is a promising material for future on chip inductors.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124811388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rudy Henning, the Academician 鲁迪·亨宁院士
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848680
A. Snider
{"title":"Rudy Henning, the Academician","authors":"A. Snider","doi":"10.1109/MWSYM.2014.6848680","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848680","url":null,"abstract":"Summary form only given. Dr. Henning joined the Department of Electrical Engineering at USF soon after its inception, and over the course of his tenure he served in the roles of Professor, Director of Microwave Studies, IEEE Branch Counselor, Department Chair, and Assistant Dean. His concern and compassion for students and his sense of fairness to his colleagues won the respect and devotion of all who came into contact with him. This presentation surveys the highlights of his tenure and includes some warm remembrances of our friend.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123792571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic FET model - DynaFET - for GaN transistors from NVNA active source injection measurements 动态场效应管模型- DynaFET -从NVNA有源注入测量GaN晶体管
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848293
Jianjun Xu, Rob D. Jones, S. Harris, T. Nielsen, D. Root
{"title":"Dynamic FET model - DynaFET - for GaN transistors from NVNA active source injection measurements","authors":"Jianjun Xu, Rob D. Jones, S. Harris, T. Nielsen, D. Root","doi":"10.1109/MWSYM.2014.6848293","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848293","url":null,"abstract":"A complete nonlinear characterization and modeling flow for modern GaN transistors is presented. Features include a new active-source injection based waveform measurement HW/SW system built around an NVNA, an extended artificial neural network (ANN) training infrastructure for coupled electro-thermal and trap-dependent model constitutive relations, and the native implementation in a commercial simulator. The model is validated by detailed comparisons to measured data for an advanced mm-wave 150 nm 6×60μm GaN HFET manufactured by Raytheon Integrated Defense Systems. Excellent results are achieved for DC, S-parameters, harmonic and intermodulation distortion, and load-pull figures of merit, over a very wide range of bias conditions, complex loads, powers, and frequencies.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125434866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 67
A microwave interferometer based contactless quasi-TEM waveguide position encoder with micrometer accuracy 基于微波干涉仪的非接触式准瞬变电磁法波导位置编码器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848655
S. Mann, S. Lindner, F. Lurz, F. Barbon, S. Linz, R. Weigel, A. Koelpin
{"title":"A microwave interferometer based contactless quasi-TEM waveguide position encoder with micrometer accuracy","authors":"S. Mann, S. Lindner, F. Lurz, F. Barbon, S. Linz, R. Weigel, A. Koelpin","doi":"10.1109/MWSYM.2014.6848655","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848655","url":null,"abstract":"Position measurement plays an important role in industrial process technology. Hereby, a waveguide based position sensor system for industrial applications is described. The proposed system features a Phase Locked Loop controlled 24 GHz signal source, an interferometric Six-Port receiver structure, a radar coupler, and a terminated quasi-TEM parallel plate waveguide structure. Furthermore, the system concept comprises a target, which can be applied both touching and contactless in the waveguide's fringing field, reflecting a part of the transmitted wave. To obtain the target's position information, the reflected wave is compared to a reference signal with respect to the relative phase difference. Hence, this phase shift is directly related to the position information.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115525348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Directional coupler with high isolation bandwidth using electrical balance 使用电平衡的高隔离带宽定向耦合器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848434
Abhishek Kumar, S. Aniruddhan, R. Ganti
{"title":"Directional coupler with high isolation bandwidth using electrical balance","authors":"Abhishek Kumar, S. Aniruddhan, R. Ganti","doi":"10.1109/MWSYM.2014.6848434","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848434","url":null,"abstract":"A directional coupler using edge coupled lines is designed and fabricated on a two-layer PCB with isolation being achieved through electrical balance. Measured results show 4dB coupling and 34dB isolation at a frequency of 2.5GHz with 16% matching bandwidth (-10dB). Isolation varies between 31dB to 36dB in the 2.3GHz to 3GHz frequency range.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"733 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116072969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 71–86GHz multi-tanh up-conversion mixer achieving +1dBm OP1dB in 0.13 μm SiGe technology 采用0.13 μm SiGe技术实现+1dBm OP1dB的71-86GHz多槽上转换混频器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848282
Run Levinger, B. Sheinman, O. Katz, R. Ben-Yishay, R. Carmon, N. Mazor, Avi Bruetbrat, D. Elad, E. Socher
{"title":"A 71–86GHz multi-tanh up-conversion mixer achieving +1dBm OP1dB in 0.13 μm SiGe technology","authors":"Run Levinger, B. Sheinman, O. Katz, R. Ben-Yishay, R. Carmon, N. Mazor, Avi Bruetbrat, D. Elad, E. Socher","doi":"10.1109/MWSYM.2014.6848282","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848282","url":null,"abstract":"A high output 1dB compression up-conversion mixer for the entire E band frequency range, 71-76 GHz and 81-86 GHz, is designed and fabricated in IBM 0.13 μm SiGe technology. The mixer is comprised of a double balanced Gilbert cell and a multi-tanh three transistor hybrid transconductance stage, used to enhance the mixer linearity. The conversion gain and output 1dB compression are 3.9dB and +1dBm, respectively at 71GHz and vary within 3dB and 4dB respectively over the entire 15GHz range. LO leakage is less then -30dB and noise figure is under 9dB. The circuit consumes 80mW from a 2.7V supply.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116129643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 6.5/17.5-GHz dual-channel interferometer-based capacitive Sensor in 65-nm CMOS for high-speed flow cytometry 基于65纳米CMOS的6.5/17.5 ghz双通道干涉仪电容式传感器，用于高速流式细胞术
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848507
Jun-Chau Chien, M. Anwar, E. Yeh, Luke P. Lee, A. Niknejad
{"title":"A 6.5/17.5-GHz dual-channel interferometer-based capacitive Sensor in 65-nm CMOS for high-speed flow cytometry","authors":"Jun-Chau Chien, M. Anwar, E. Yeh, Luke P. Lee, A. Niknejad","doi":"10.1109/MWSYM.2014.6848507","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848507","url":null,"abstract":"In this paper, a dual-channel interferometer-based capacitive sensor with high sensitivity is implemented in 65nm CMOS. Such architecture facilitates high throughput flow cytometry applications using intrinsic EM signatures of biological cells. To enhance SNR, injection-locked oscillator is utilized to perform phase amplification with regard to capacitance-induced frequency shift. Noise from on-chip QVCO is further reduced through I/Q interpolation. Measurements show that the sensor achieves better than 1.5 aF of sensitivity at 250-kHz equivalent noise-bandwidth. With the aid of 3D hydrodynamic focusing, flow cytometry is tested with polystyrene beads. The proposed dual-channel sensor consumes 30 mW under 1 V supply.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116161324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
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