采用0.13 μm SiGe技术实现+1dBm OP1dB的71-86GHz多槽上转换混频器

Run Levinger, B. Sheinman, O. Katz, R. Ben-Yishay, R. Carmon, N. Mazor, Avi Bruetbrat, D. Elad, E. Socher
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引用次数: 9

摘要

采用IBM 0.13 μm SiGe技术设计和制造了一款高输出1dB压缩上转换混频器,适用于71-76 GHz和81-86 GHz的整个E频段频率范围。混频器由双平衡吉尔伯特单元和多钽三晶体管混合跨导级组成,用于提高混频器的线性度。在71GHz时,转换增益和输出1dB压缩分别为3.9dB和+1dBm,在整个15GHz范围内分别在3dB和4dB内变化。本品漏损小于-30dB,噪声系数小于9dB。该电路从2.7V电源消耗80mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 71–86GHz multi-tanh up-conversion mixer achieving +1dBm OP1dB in 0.13 μm SiGe technology
A high output 1dB compression up-conversion mixer for the entire E band frequency range, 71-76 GHz and 81-86 GHz, is designed and fabricated in IBM 0.13 μm SiGe technology. The mixer is comprised of a double balanced Gilbert cell and a multi-tanh three transistor hybrid transconductance stage, used to enhance the mixer linearity. The conversion gain and output 1dB compression are 3.9dB and +1dBm, respectively at 71GHz and vary within 3dB and 4dB respectively over the entire 15GHz range. LO leakage is less then -30dB and noise figure is under 9dB. The circuit consumes 80mW from a 2.7V supply.
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