基于65纳米CMOS的6.5/17.5 ghz双通道干涉仪电容式传感器,用于高速流式细胞术

Jun-Chau Chien, M. Anwar, E. Yeh, Luke P. Lee, A. Niknejad
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引用次数: 22

摘要

本文设计了一种基于双通道干涉仪的高灵敏度电容式传感器。这种结构促进了利用生物细胞固有的EM特征的高通量流式细胞术应用。为了提高信噪比,利用注入锁定振荡器对电容频移进行相位放大。片上QVCO的噪声通过I/Q插值进一步降低。测量结果表明,该传感器在250 khz等效噪声带宽下的灵敏度优于1.5 aF。借助三维流体动力聚焦技术,用聚苯乙烯珠进行了流式细胞术检测。所提出的双通道传感器在1v电源下消耗30mw。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 6.5/17.5-GHz dual-channel interferometer-based capacitive Sensor in 65-nm CMOS for high-speed flow cytometry
In this paper, a dual-channel interferometer-based capacitive sensor with high sensitivity is implemented in 65nm CMOS. Such architecture facilitates high throughput flow cytometry applications using intrinsic EM signatures of biological cells. To enhance SNR, injection-locked oscillator is utilized to perform phase amplification with regard to capacitance-induced frequency shift. Noise from on-chip QVCO is further reduced through I/Q interpolation. Measurements show that the sensor achieves better than 1.5 aF of sensitivity at 250-kHz equivalent noise-bandwidth. With the aid of 3D hydrodynamic focusing, flow cytometry is tested with polystyrene beads. The proposed dual-channel sensor consumes 30 mW under 1 V supply.
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