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2008 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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A deterministic Boltzmann equation solver for two-dimensional semiconductor devices 二维半导体器件的确定性玻尔兹曼方程求解器
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648295
Sung-Min Hong, C. Jungemann, M. Bollhofer
{"title":"A deterministic Boltzmann equation solver for two-dimensional semiconductor devices","authors":"Sung-Min Hong, C. Jungemann, M. Bollhofer","doi":"10.1109/SISPAD.2008.4648295","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648295","url":null,"abstract":"We have developed a Boltzmann equation solver for two-dimensional (2D) semiconductor devices based on the spherical harmonics expansion and the maximum entropy dissipation scheme for stabilization. The large system of equations is partitioned according to the order of the spherical harmonics and solved by a memory efficient blockwise Gauss-Seidel method. Results are presented for a 2D NPN Si bipolar junction transistor.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128905874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Air-spacer Self-Aligned Contact MOSFET for future dense memories 空气间隔自对准触点MOSFET用于未来的密集存储器
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648300
Jemin Park, C. Hu
{"title":"Air-spacer Self-Aligned Contact MOSFET for future dense memories","authors":"Jemin Park, C. Hu","doi":"10.1109/SISPAD.2008.4648300","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648300","url":null,"abstract":"An air-spacer SAC (self-aligned contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130003775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Operational PRAM analysis with PVT variations using process-aware compact model 使用过程感知紧凑模型分析PVT变化的可操作PRAM
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648289
Y. Kim, Y.G. Kim, G.Y. Yang, K. Lee, H. Horii, H.G. An, J.H. Kong, K.J. Lee, M.H. Park, Y. Park, M.H. Yoo
{"title":"Operational PRAM analysis with PVT variations using process-aware compact model","authors":"Y. Kim, Y.G. Kim, G.Y. Yang, K. Lee, H. Horii, H.G. An, J.H. Kong, K.J. Lee, M.H. Park, Y. Park, M.H. Yoo","doi":"10.1109/SISPAD.2008.4648289","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648289","url":null,"abstract":"In this paper, we present for the first time a process-aware compact model to describe cell characteristics of PRAM. Applying this model, we have performed hierarchical sensitivity analysis on the process, voltage, and temperature (PVT) variations and studied impacts on the sensing margin.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130120158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green’s function formalism 用非平衡格林函数形式化的高k金属栅极堆模型
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648310
O. Baumgartner, M. Karner, H. Kosina
{"title":"Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green’s function formalism","authors":"O. Baumgartner, M. Karner, H. Kosina","doi":"10.1109/SISPAD.2008.4648310","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648310","url":null,"abstract":"A high-k-metal-gate stack has been investigated using an open boundary model based on the non-equilibrium Greenpsilas function formalism. The numerical energy integration, which is crucial because of the very narrow resonant states, is pointed out in detail. The model has been benchmarked against the established classical and closed boundary Schrodinger-Poisson model. In contrast to the established models, the solution covers distinct resonant states with a realistic broadening and results in a major difference in the current density spectrum.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114144002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A complete charge based compact model for silicon nanowire FETs including doping and advanced physical effects 一个完整的基于电荷的硅纳米线场效应管紧凑模型，包括掺杂和先进的物理效应
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648261
Feng Liu, Jin He, Lining Zhang, Jian Zhang, Jinhua Hu, Xing Zhang, M. Chan
{"title":"A complete charge based compact model for silicon nanowire FETs including doping and advanced physical effects","authors":"Feng Liu, Jin He, Lining Zhang, Jian Zhang, Jinhua Hu, Xing Zhang, M. Chan","doi":"10.1109/SISPAD.2008.4648261","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648261","url":null,"abstract":"A charge-based silicon nanowire FET (SNWT) compact model has been developed. For the first time, inversion charge of SNWT with arbitrary doping concentration is described by an accurate equation including the effects of doping and volume inversion. Analytic drain current, transconductance, output conductance, terminal charges and capacitance are all physically derived and compared with numerical simulation. It shows that the core model is valid for all operation regions and a wide range of physical configuration including channel doping concentrations and geometrical dimensions. Moreover, advanced physical effects have been included in the model self-consistently.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131884028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A new unified compact model for quasi-ballistic transport: Application to the analysis of circuit performances of a Double-Gate architecture 准弹道输运的一种新的统一紧凑模型:在双栅结构电路性能分析中的应用
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648316
S. Martinie, D. Munteanu, G. Le Carval, J. Autran
{"title":"A new unified compact model for quasi-ballistic transport: Application to the analysis of circuit performances of a Double-Gate architecture","authors":"S. Martinie, D. Munteanu, G. Le Carval, J. Autran","doi":"10.1109/SISPAD.2008.4648316","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648316","url":null,"abstract":"We present here a new unified analytic model for ballistic and quasi-ballistic transport. Starting from the classical approach of Natori, we enhanced it by taking into account degeneracy and adding consistently an original modelling of short channel effect (SCE) and drain induced barrier lowering (DIBL) by including quantum confinement. Our model has been validated by comparisons with TCAD simulations and results from literature. Finally, we applied our model to simple circuit elements to evaluate potential performance of a double-gate architecture in a Verilog-A environment.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130175165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Reduction of discrete-dopant-induced high-frequency characteristic fluctuations in nanoscale CMOS circuit 纳米级CMOS电路中离散掺杂诱导高频特性波动的减小
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648274
Yiming Li, Chih-Hong Hwang, Ta-Ching Yeh, Hsuan-Ming Huang, Tien-Yeh Li, Hui-Wen Cheng
{"title":"Reduction of discrete-dopant-induced high-frequency characteristic fluctuations in nanoscale CMOS circuit","authors":"Yiming Li, Chih-Hong Hwang, Ta-Ching Yeh, Hsuan-Ming Huang, Tien-Yeh Li, Hui-Wen Cheng","doi":"10.1109/SISPAD.2008.4648274","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648274","url":null,"abstract":"As the dimension of semiconductor device shrunk into nanoscale, characteristic fluctuation is more pronounced, and become crucial for circuit design. Diverse approaches have been reported to investigate and suppress the random-dopant-induced fluctuations in devices. However, attention is seldom drawn to the existence of high-frequency characteristic fluctuations of active device. In this paper, intrinsic high-frequency characteristic fluctuations of the nanoscale MOSFET circuit induced by random dopants are intensively explored using an experimentally validated simulation methodology, where fluctuation suppression technique is further examined. The circuit gain, the 3 db bandwidth and the unity-gain bandwidth of the tested circuit are estimated concurrently capturing the discrete-dopant-number-and discrete-dopant-position-induced fluctuations. This study provides an insight into discrete-dopant-induced intrinsic high-frequency characteristic fluctuations and examines the potential fluctuation suppression technique for nanoscale transistor circuit.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117225990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Unusually strong temperature dependence of graphene electron mobility 石墨烯电子迁移率异常强烈的温度依赖性
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648265
A. Akturk, N. Goldsman
{"title":"Unusually strong temperature dependence of graphene electron mobility","authors":"A. Akturk, N. Goldsman","doi":"10.1109/SISPAD.2008.4648265","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648265","url":null,"abstract":"We report unusually strong temperature dependence of graphene electron mobility, obtained using full-band Monte Carlo (MC) simulations and experiment. The electron-phonon scattering limited intrinsic graphene electron mobility changes by as much as the fourth power of temperature, Tn (2 < n < 4), in the 200 K to 350 K range. This is in contradiction with the generally observed approximately linear T dependence around room temperature. This linear dependence arises due to the phonon equipartition approximation that gives rise to a linear temperature versus scattering rate relation. The highly nonlinear temperature dependence is reminiscent of transport in the Bloch-Gruneisen temperature range, where phonon energies assisting emissions and absorptions are less than or comparable to thermal energies. In addition, graphene has a conic dispersion relation around its K points or conduction band minima, setting it apart from other materials with parabolic energy-momentum curves around their conduction band minima, and consequently well-defined effective masses.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126656024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Modeling bias temperature instability during stress and recovery 模拟应力和恢复过程中的偏置温度不稳定性
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648238
T. Grasser, W. Goes, B. Kaczer
{"title":"Modeling bias temperature instability during stress and recovery","authors":"T. Grasser, W. Goes, B. Kaczer","doi":"10.1109/SISPAD.2008.4648238","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648238","url":null,"abstract":"Bias temperature instability has attracted a lot of attention as a dominant degradation mechanism in modern MOS transistors. Despite considerable effort, the exact physics behind this mechanisms are still controversial. We discuss some numerical aspects of our recently presented model which is capable of reproducing the main features of the phenomenon. Furthermore, we demonstrate how the model can be applied to understand variations in nominally identically stressed devices which have become important in the small area limit.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121629289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mobility enhancement in thin silicon films: Strain and thickness dependences of the effective masses and non-parabolicity parameter 硅薄膜的迁移率增强:有效质量和非抛物性参数对应变和厚度的依赖性
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648258
V. Sverdlov, T. Windbacher, S. Selberherr
{"title":"Mobility enhancement in thin silicon films: Strain and thickness dependences of the effective masses and non-parabolicity parameter","authors":"V. Sverdlov, T. Windbacher, S. Selberherr","doi":"10.1109/SISPAD.2008.4648258","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648258","url":null,"abstract":"A two-band kmiddotp model is used to describe the subband structure in strained thin silicon films. The model provides the dependence of the conductivity effective mass on both strain and film thickness simultaneously. The shear strain induced decrease of the conductivity effective mass is more pronounced in stressed thin silicon films. This conductivity mass decrease ensures the mobility enhancement in MOSFETs even with extremely thin silicon films. The two-band kmiddotp model also describes the non-parabolicity dependence on film thickness and on strain. The dependence of the non-parabolicity parameter on both film thickness and strain reduces the mobility enhancement due to the conductivity mass modification in advanced MOSFETs with strained ultra-thin silicon body.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121624478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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