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2008 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Phase-change memory simulations using an analytical phase space model 用分析相空间模型模拟相变存储器
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648236
B. Schmithusen, P. Tikhomirov, E. Lyumkis
{"title":"Phase-change memory simulations using an analytical phase space model","authors":"B. Schmithusen, P. Tikhomirov, E. Lyumkis","doi":"10.1109/SISPAD.2008.4648236","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648236","url":null,"abstract":"In this paper, an analytical phase transition model is coupled self-consistently with the electro-thermal transport model. The phase space model and the transition dynamic is described. The resulting phase-electro-thermal simulation model is applied to an illustrative example structure. The self-consistency of the approach and its resulting simulation speed and robustness provide a useful TCAD tool for design studies of phase change memory devices.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121838476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Quasi-ballistic transport in nanowire field-effect transistors 纳米线场效应晶体管的准弹道输运
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648223
G. Baccarani, E. Gnani, A. Gnudi, S. Reggiani
{"title":"Quasi-ballistic transport in nanowire field-effect transistors","authors":"G. Baccarani, E. Gnani, A. Gnudi, S. Reggiani","doi":"10.1109/SISPAD.2008.4648223","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648223","url":null,"abstract":"In this work we investigate quasi-ballistic transport in nanowire field-effect transistors (NW-FETs) by addressing the 1D Boltzmann transport equation. First, we find its exact analytical solution for any potential profile within the constraint of dominant elastic scattering. Next, we calculate the I-V characteristics of the NW-FET, which differ from the Landauer expression for the inclusion of a transmission coefficient smaller than one. Our approach provides a methodology for the calculation of the transmission and backscattering coefficients directly from the scattering probabilities. These coefficients turn out to be functions of the ratio between the device length and a suitably-averaged momentum-relaxation distance. One of the main conclusions of the paper is that, so long as inelastic collisions are neglected, the so-called kT-layer plays no role in 1D devices.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117131764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Monte Carlo investigation of potential fluctuation in 3D device structure 三维器件结构电位波动的蒙特卡罗研究
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648230
Y. Ohkura, C. Suzuki, N. Mise, T. Matsuki, T. Eimori, M. Nakamura
{"title":"Monte Carlo investigation of potential fluctuation in 3D device structure","authors":"Y. Ohkura, C. Suzuki, N. Mise, T. Matsuki, T. Eimori, M. Nakamura","doi":"10.1109/SISPAD.2008.4648230","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648230","url":null,"abstract":"The motions of particles are calculated in 3D structure to evaluate potential fluctuation. The results of homogeneous and thermal equilibrium systems are in good agreement with theoretical results. In 3D MOSFET, the potential fluctuation extends towards the depletion layer and deviation of the amplitude from theoretical value is observed and ascribed to hot electron energy distribution, so the conventional plasmon scattering model should be modified in non-uniform and non-equilibrium carrier distribution.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115503370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computational electronics in the 21st century: Challenges, opportunities, issues 21世纪的计算电子学:挑战、机遇和问题
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648225
M. Lundstrom
{"title":"Computational electronics in the 21st century: Challenges, opportunities, issues","authors":"M. Lundstrom","doi":"10.1109/SISPAD.2008.4648225","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648225","url":null,"abstract":"Semiconductor electronics transformed the 20th century, and computational electronics played an important role in its success. As we embark on a new century, it is worth reflecting on where electronics is heading and on how computational electronics can continue to play a vital role. This talk presents that authorpsilas personal reflections on this topic and will, he hopes, spark a discussion within the community.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126113045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs 单轴和双轴应变In(x)Ga(1−x)As NMOS dgfet的性能评价
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648247
Donghyun Kim, T. Krishnamohan, K. Saraswat
{"title":"Performance evaluation of uniaxial- and biaxial-strained In(x)Ga(1−x)As NMOS DGFETs","authors":"Donghyun Kim, T. Krishnamohan, K. Saraswat","doi":"10.1109/SISPAD.2008.4648247","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648247","url":null,"abstract":"For the first time, the performance of uniaxial- and biaxial- strained InxGa1-xAs NMOS double gate FETs (DGFET) with (111) and (001) orientations are thoroughly investigated under ballistic transport, taking into account non-parabolic full band structure, quantum effects, band-to-band tunneling (BTBT) and short-channel effects (SCE). The real and complex band structures for different composition, uniaxial and biaxial (tensile and compressive) strain are calculated using the local empirical pseudo-potential method (LEPM). In this paper, by varying strain conditions and orientations for the different materials, the best performing strained InxGa1-xAs materials are identified.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128054398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of electromigration in redundant vias 冗余过孔中的电迁移分析
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648281
R. Lacerda de Orio, H. Ceric, S. Carniello, S. Selberherr
{"title":"Analysis of electromigration in redundant vias","authors":"R. Lacerda de Orio, H. Ceric, S. Carniello, S. Selberherr","doi":"10.1109/SISPAD.2008.4648281","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648281","url":null,"abstract":"We analyze the electromigration material transport and stress build-up in dual-damascene interconnect structures with single and double vias. Two cases are studied: in the first, an effective diffusion coefficient is considered, representing the case where grain boundary diffusion is the dominant mechanism and the adhesion between the copper and the capping layer is strong. In the second, the effect of interfaces, based on the assumption that the copper/capping layer interface is the main path for diffusion, is considered. It is shown that the diffusion mechanism has a significant impact on the behavior of the redundant via structure. The influence of the via spacing is also discussed.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127201767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Synthetic soft error rate simulation considering neutron-induced single event transient from transistor to LSI-chip level 考虑中子诱导单事件瞬态从晶体管到lsi芯片级的综合软错误率仿真
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648313
M. Hane, H. Nakamura, K. Tanaka, K. Watanabe, Y. Tosaka, K. Ishikawa, S. Kumashiro
{"title":"Synthetic soft error rate simulation considering neutron-induced single event transient from transistor to LSI-chip level","authors":"M. Hane, H. Nakamura, K. Tanaka, K. Watanabe, Y. Tosaka, K. Ishikawa, S. Kumashiro","doi":"10.1109/SISPAD.2008.4648313","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648313","url":null,"abstract":"Soft error phenomena induced by the Sea-level cosmic neutron have been investigated by using a simulation system that covers from an individual MOSFET device level to an LSI-chip level. This system consists of the several kinds of simulation codes/tools, such as a mixed-mode 3D device simulator, SPICE circuit simulator, and analyzing tools of gate-level net-lists. A comprehensive practical simulation flow is demonstrated in this paper on commercial 90 nm generation logic devices and standard-cells.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133190717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A surface potential based poly-Si TFT model for circuit simulation 基于表面电位的多晶硅TFT电路仿真模型
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648315
S. Miyano, Y. Shimizu, T. Murakami, M. Miura-Mattausch
{"title":"A surface potential based poly-Si TFT model for circuit simulation","authors":"S. Miyano, Y. Shimizu, T. Murakami, M. Miura-Mattausch","doi":"10.1109/SISPAD.2008.4648315","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648315","url":null,"abstract":"We have developed a compact model of poly-Si TFTs based on complete surface-potential descriptions, including carrier trapping. The model was shown to be reliable for predicting high-speed circuit performances.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124846511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Numerical study of carbon nanotube infra-red photo-detectors 碳纳米管红外探测器的数值研究
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648242
M. Pourfath, H. Kosina
{"title":"Numerical study of carbon nanotube infra-red photo-detectors","authors":"M. Pourfath, H. Kosina","doi":"10.1109/SISPAD.2008.4648242","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648242","url":null,"abstract":"Carbon nanotubes have been considered in recent years for future opto-electronic applications because of their direct band-gap and the tunability of the band-gap with the tube diameter. The numerical challenges for the analysis of carbon nanotube based photo-detectors are studied. The performance of infra-red photo-detectors based on carbon nanotube field-effect transistors is analyzed, using the non-equilibrium Greenpsilas function formalism. The relatively low ratio of the photo-current to the dark current limits the performance of such devices. We show that by employing a double gate structure this ratio can be significantly increased.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123704083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of microstructure impact on electromigration 微观结构对电迁移的影响分析
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648282
H. Ceric, R. L. de Orio, J. Červenka, S. Selberherr
{"title":"Analysis of microstructure impact on electromigration","authors":"H. Ceric, R. L. de Orio, J. Červenka, S. Selberherr","doi":"10.1109/SISPAD.2008.4648282","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648282","url":null,"abstract":"The standard electromigration model is extended by introducing an anisotropic diffusivity which depends on the general stress tensor and a new model of grain boundaries which describes dynamics of mobile vacancies and vacancies trapped in grain boundaries. The application scenario for electromigration simulation is presented. The new calibration and usage concept takes into account microstructural diversity of interconnect inputs. A simulation example illustrating the effect of microstructural variation is presented and discussed.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115403891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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