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2008 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Investigation of noise in silicon nanowire transistors through quantum simulations 基于量子模拟的硅纳米线晶体管噪声研究
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648240
Hong-hyun Park, S. Park, H. Min, Y. Park, Seonghoon Jin
{"title":"Investigation of noise in silicon nanowire transistors through quantum simulations","authors":"Hong-hyun Park, S. Park, H. Min, Y. Park, Seonghoon Jin","doi":"10.1109/SISPAD.2008.4648240","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648240","url":null,"abstract":"A theoretical analysis of the drain current and its fluctuation in silicon nanowire transistors is proposed. We also suggest a general approach to the electronic noise calculation in the presence of a continuous distribution of phase-breaking scattering. Through our approach, the drain current noise characteristics with and without electron-phonon interactions are obtained at various bias conditions, and their physical origins are investigated. The non-equilibrium Greenpsilas function formalism is employed within the effective-mass and Hartree approximations. In addition, the intravalley and intervalley electron-phonon scattering mechanisms are included using the deformation potential theory and the self-consistent Born approximation.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115308744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Wigner Monte Carlo approach to quantum transport in nanodevices 纳米器件中量子输运的维格纳-蒙特卡罗方法
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648291
P. Dollfus, D. Querlioz, J. Saint-Martin, V. Do, A. Bournel
{"title":"Wigner Monte Carlo approach to quantum transport in nanodevices","authors":"P. Dollfus, D. Querlioz, J. Saint-Martin, V. Do, A. Bournel","doi":"10.1109/SISPAD.2008.4648291","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648291","url":null,"abstract":"The Wigner Monte Carlo approach is shown to provide an efficient way to study quantum transport in the presence of scattering and to connect semi-classical to quantum transport. The study of resonant tunneling diodes highlights the physics of the impact of scattering on resonant tunneling, and on electron decoherence and localization. The simulation of nano-MOSFET evidences a mixed regime, where both quantum transport and scattering play a significant role.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127143004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ultra high performance insulator channel transistor 超高性能绝缘体沟道晶体管
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648257
Dawei Zhang, M. Ferrier, P. Griffin, Y. Nishi, T. Skotnicki
{"title":"Ultra high performance insulator channel transistor","authors":"Dawei Zhang, M. Ferrier, P. Griffin, Y. Nishi, T. Skotnicki","doi":"10.1109/SISPAD.2008.4648257","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648257","url":null,"abstract":"In this paper, an insulator channel planar transistor with ultra-high on-current, steep sub-threshold slope and superior scalability is presented. This device concept is proven by Sen Taurus device simulator with a quantum mechanic tunneling model and by a home made model utilizing transmission matrix theory.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114253564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green’s function 基于非平衡格林函数的n-MOSFET准束缚态直接隧穿电流分析
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648277
Satoru Muraoka, S. Souma, M. Ogawa
{"title":"Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green’s function","authors":"Satoru Muraoka, S. Souma, M. Ogawa","doi":"10.1109/SISPAD.2008.4648277","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648277","url":null,"abstract":"Gate-leakage current from quasi-bound states in highly scaled metal-oxide-semiconductor devices has been investigated by using a non-equilibrium Greenpsilas function method. We have taken account of the realistic band structure of Si with anisotropic effective masses. This study also presents a model for the efficient simulation of gate-leakage current with open boundaries where no escape time or life time has been assumed contrary to the conventional analysis [1]. We have added optical potential to the on-site energies only above the conduction band edge in the substrate electrode. The optical potential induces energy broadening in the triangle potential to calculate the density of states properly.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129141271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Band-engineering of novel channel materials for high performance nanoscale MOSFETs 高性能纳米mosfet新型沟道材料的能带工程
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648246
T. Krishnamohan
{"title":"Band-engineering of novel channel materials for high performance nanoscale MOSFETs","authors":"T. Krishnamohan","doi":"10.1109/SISPAD.2008.4648246","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648246","url":null,"abstract":"In order to continue the scaling of silicon-based CMOS and maintain the historic progress in information processing and transmission, innovative device structures and new materials have to be created. A channel material with high mobility and therefore high injection velocity can increase on current and reduce delay. Currently, strained-Si is the dominant technology for high performance MOSFETs and increasing the strain provides a viable solution to scaling. However, looking into future scaling of nanoscale MOSFETs it becomes important to look at higher mobility materials, like Ge and III-V materials together with innovative device structures and strain, which may perform better than even very highly strained Si. For both Ge and III-V devices problems of leakage need to be solved. Novel heterostructure quantum-well (QW) FETs will be needed to exploit the promised advantages of Ge and III-V based devices.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129473076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Transport masses in strained silicon MOSFETs with different channel orientations 应变硅mosfet中不同沟道取向的输运质量
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648248
D. Rideau, M. Feraille, M. Michaillat, C. Tavernier, H. Jaouen
{"title":"Transport masses in strained silicon MOSFETs with different channel orientations","authors":"D. Rideau, M. Feraille, M. Michaillat, C. Tavernier, H. Jaouen","doi":"10.1109/SISPAD.2008.4648248","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648248","url":null,"abstract":"The confined states in [001]-oriented strained silicon layers embedded in oxide are investigated using dasiafull-zonepsila k.p analysis within the envelop function approximation and Tight-Binding (TB) model. Calculations of important transport parameters - energy band shifts and transport masses - show new results, rising the issues of the limit of simple models like the Effective Mass Approximation (EMA).","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"833 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120930353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Coupling of non-equilibrium Green’s function and Wigner function approaches 非平衡格林函数与Wigner函数方法的耦合
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648308
O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr
{"title":"Coupling of non-equilibrium Green’s function and Wigner function approaches","authors":"O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr","doi":"10.1109/SISPAD.2008.4648308","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648308","url":null,"abstract":"We propose a coupling scheme, where the advantages of the coherent Greenpsilas function formalism are combined with the ability of the Wigner formalism to account for phase-breaking processes of interaction with phonons and other lattice imperfections. The Greenpsilas function formalism is used to calculate the coherent Wigner function which provides the initial condition in an equation, from which corrections due to phonon interactions can be calculated. A variety of possible approaches to the obtained equation are considered, and the case where the initial condition is small is investigated numerically.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121614682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs 量子约束对4H-SiC mosfet中界面阱占用的影响
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648267
S. Potbhare, A. Akturk, N. Goldsman, A. Lelis
{"title":"Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs","authors":"S. Potbhare, A. Akturk, N. Goldsman, A. Lelis","doi":"10.1109/SISPAD.2008.4648267","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648267","url":null,"abstract":"SiC MOSFETs suffer from an excessively high density of interface traps. Here, we present physical models to quantify the effect of quantum confinement in the channel of 4H-SiC MOSFETs on the occupation of interface traps. Quantum confinement in the MOSFET channel is solved for using the density gradient approach. Models for estimating the Fermi level at the interface, and thereby evaluating the occupation probability of interface traps are presented in the quantum confined scenario, and the results are compared to classical models. Significant difference is observed in trap occupation, especially at large gate biases, between the classical and quantum cases. This argues for the need for accurate modeling of confinement effects on interface trap occupation in 4H-SiC MOSFETs.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132107690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A unified approach for the reliability modeling of MOSFETs mosfet可靠性建模的统一方法
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648237
C. Baek, Seongwook Choi, Hong-hyun Park, Jun-Myung Woo, Y. Park, Sung-Min Hong, C. Park
{"title":"A unified approach for the reliability modeling of MOSFETs","authors":"C. Baek, Seongwook Choi, Hong-hyun Park, Jun-Myung Woo, Y. Park, Sung-Min Hong, C. Park","doi":"10.1109/SISPAD.2008.4648237","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648237","url":null,"abstract":"Modeling capabilities and considerations to achieve a unified reliability model (URM) are addressed. The causes of the trap generation and their effects on the device characteristics serve the unified reliability model. A strategy taken in the SNU group based on the CLESICO system is introduced, where the hydrogen transport and trapping in the gate dielectric to form active carrier trapping sites and their effects on the device characteristics such as the current degradation are treated in a systematic and statistical manner. The treatment of the discrete nature of the trapped charges to model the RTS and 1/f noises are also introduced.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131301572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analytical model and Monte Carlo Simulations for Phosphorus implantation in Germanium including ion channeling 含离子通道的锗中磷注入的解析模型和蒙特卡罗模拟
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648285
G. Hellings, G. Eneman, M. Meuris, K. De Meyer
{"title":"Analytical model and Monte Carlo Simulations for Phosphorus implantation in Germanium including ion channeling","authors":"G. Hellings, G. Eneman, M. Meuris, K. De Meyer","doi":"10.1109/SISPAD.2008.4648285","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648285","url":null,"abstract":"A Monte Carlo simulator for dopant implantation (TaurusMC) was successfully calibrated for the implantation of phosphorus in germanium, based on both SIMS measurements and TEM. To avoid time-consuming Monte Carlo simulations, an analytical model was proposed based on the description of as-implanted profiles with a dual Pearson curve. This model covers a large range of energy (15-180 keV) and doses (1012-1016 cm-2), of interest to the ongoing scaling efforts of Ge MOSFETs.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115707541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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