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2008 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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An analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs 双栅肖特基势垒mosfet的二维解析电流模型
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648255
Yu Ning Zhao, G. Du, J. Kang, Xiao Yan Liu, R. Han
{"title":"An analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs","authors":"Yu Ning Zhao, G. Du, J. Kang, Xiao Yan Liu, R. Han","doi":"10.1109/SISPAD.2008.4648255","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648255","url":null,"abstract":"In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114755303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electronic and transport properties of GaN/AlGaN quantum dot-based p-i-n diodes GaN/AlGaN量子点p-i-n二极管的电子和输运特性
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648266
F. Sacconi, Giuseppe Romano, G. Penazzi, Michael Povolotskyi, M. Maur, A. Pecchia, A. D. Carlo
{"title":"Electronic and transport properties of GaN/AlGaN quantum dot-based p-i-n diodes","authors":"F. Sacconi, Giuseppe Romano, G. Penazzi, Michael Povolotskyi, M. Maur, A. Pecchia, A. D. Carlo","doi":"10.1109/SISPAD.2008.4648266","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648266","url":null,"abstract":"Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AlN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114655520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
First-principles calculations for effects of Fluorine impurity in GaN 氮化镓中氟杂质影响的第一性原理计算
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648280
Jing Lu, M. Gao, Jinyu Zhang, Yan Wang, Zhiping Yu
{"title":"First-principles calculations for effects of Fluorine impurity in GaN","authors":"Jing Lu, M. Gao, Jinyu Zhang, Yan Wang, Zhiping Yu","doi":"10.1109/SISPAD.2008.4648280","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648280","url":null,"abstract":"Fluoride-based plasma treatment has been approved to be an effective technique to make E-Mode GaN-based HEMT by experiments. However, the detailed effect of Fluorine doping in GaN and AlGaN is still unclear and has never been studied theoretically. In this paper, F impurity in GaN material is firstly studied by First Principle Calculations. Sound explanations for the experimental phenomenon are derived from the results and further discuss is presented.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128218986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A self-consistent calculation of band structure in silicon nanowires using a tight-binding model 基于紧密结合模型的硅纳米线能带结构自洽计算
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648309
E. Sarrazin, S. Barraud, F. Triozon, A. Bournel
{"title":"A self-consistent calculation of band structure in silicon nanowires using a tight-binding model","authors":"E. Sarrazin, S. Barraud, F. Triozon, A. Bournel","doi":"10.1109/SISPAD.2008.4648309","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648309","url":null,"abstract":"The properties of silicon nanowire (SNW), resulting from the band structure calculation using a four-orbital sp3 tight-binding method, are discussed in this paper. A number of intrinsic properties including band gap, density of states and parabolic effective masses have been derived from the computed electronic structure for different SNW widths. A self-consistent solver of coupled 3D Poisson-Schrodinger equations using the tight-binding model has been developed to analyze the effect of gate bias on the SNW band structure at room temperature. The spatial distribution of carriers in the nanowire is calculated and the impact of gate bias on subbands is discussed. Finally, effective mass model is compared to tight-binding model to assess the validity of this approximation in narrow SNW.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128647301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
2D simulation of gate currents in MOSFETs: Comparison between S-Device and the quantum mechanical simulator GreenSolver mosfet中栅极电流的二维模拟:S-Device与量子力学模拟器GreenSolver的比较
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648297
A. Schenk, M. Luisier
{"title":"2D simulation of gate currents in MOSFETs: Comparison between S-Device and the quantum mechanical simulator GreenSolver","authors":"A. Schenk, M. Luisier","doi":"10.1109/SISPAD.2008.4648297","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648297","url":null,"abstract":"The gate leakage current caused by direct tunneling in a double-gate n-type MOSFET with a physical gate length of 22 nm is studied. Two approaches are compared: a one-dimensional (1D) Schrodinger-Poisson solver coupled to the common drift-diffusion model and a two-dimensional (2D), full quantum mechanical computation of the current. In the first approach, the tunnel probability through the gate dielectric is obtained on straight lines that connect points in the channel with the gate. The second method uses a 2D Schrodinger-Poisson solver with open boundary conditions where carriers are injected from the source, drain, and gate terminals. The dielectric layer has an equivalent oxide thickness of 1.2 nm and is either composed of pure SiO2 or of a high-K SiOx-HfO2 stack. It is found that the leakage currents calculated with the 2D approach are significantly larger due to diffraction of the electron waves at both edges of the gate contact.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128900370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Non-quasi-static carrier dynamics of MOSFETs under low-voltage operation 低压工作下mosfet的非准静态载流子动力学
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1587/TRANSELE.E92.C.608
M. Miyake, D. Hori, N. Sadachika, U. Feldmann, M. Miura-Mattausch, H. Mattausch, T. Iizuka, K. Matsuzawa, Y. Sahara, T. Hoshida, T. Tsukada
{"title":"Non-quasi-static carrier dynamics of MOSFETs under low-voltage operation","authors":"M. Miyake, D. Hori, N. Sadachika, U. Feldmann, M. Miura-Mattausch, H. Mattausch, T. Iizuka, K. Matsuzawa, Y. Sahara, T. Hoshida, T. Tsukada","doi":"10.1587/TRANSELE.E92.C.608","DOIUrl":"https://doi.org/10.1587/TRANSELE.E92.C.608","url":null,"abstract":"We analyze the carrier dynamics in MOSFETs under low voltage operation for a 90 nm CMOS technology. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. The switching frequency is found to decrease with reduced voltage due to diminished inversion condition and thus driving capability, which can be modeled with increased transit delay.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116061916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of fixed charge at MOSFETs’ SiO2/Si interface on Vth variation mosfet的SiO2/Si界面固定电荷对Vth变化的影响
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648228
A. T. Putra, T. Tsunomura, A. Nishida, S. Kamohara, K. Takeuchi, T. Hiramoto
{"title":"Impact of fixed charge at MOSFETs’ SiO2/Si interface on Vth variation","authors":"A. T. Putra, T. Tsunomura, A. Nishida, S. Kamohara, K. Takeuchi, T. Hiramoto","doi":"10.1109/SISPAD.2008.4648228","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648228","url":null,"abstract":"Randomness of discrete fixed charges at SiO2/Si interface of NMOS, which is thought to be one of the possible origins of threshold voltage (Vth) variation, is investigated using 3D device simulation. Three cases of fixed charge types are assumed; (i) both negative and positive sheet charges exist with zero net charge (mix charges), (ii) only negative sheet charges exist, and (iii) only positive sheet charges exist. BVT is used as a Vth variation indicator. It is found that, even if high concentration of fixed charge (1012 cm-2) is assumed, the difference of Vth variation between measured NMOS and random dopant fluctuation model by 3D TCAD still can not be explained, which reveals that other fluctuated parameters exists.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"339 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124775921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors 纳米ocmos晶体管中随机掺杂诱导阈值电压波动的预测
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648227
D. Reid, C. Millar, G. Roy, S. Roy, R. Sinnott, G. Stewart, A. Asenov
{"title":"Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors","authors":"D. Reid, C. Millar, G. Roy, S. Roy, R. Sinnott, G. Stewart, A. Asenov","doi":"10.1109/SISPAD.2008.4648227","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648227","url":null,"abstract":"The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of random discrete dopant induced threshold voltage fluctuations to be constructed based on underlying physical processes. The construction may also be statistically enhanced, allowing a significant reduction in the computational effort necessary to accurately model random discrete dopant induced variability.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132171058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A robust parallel delaunay mesh generation approach suitable for three-dimensional TCAD 一种适用于三维TCAD的鲁棒并行delaunay网格生成方法
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648288
F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr
{"title":"A robust parallel delaunay mesh generation approach suitable for three-dimensional TCAD","authors":"F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr","doi":"10.1109/SISPAD.2008.4648288","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648288","url":null,"abstract":"A new approach for mesh generation has been developed to fulfill the requirements of three-dimensional TCAD with respect to a full utilization of the available upcoming computational power of multi-core CPUs. Parallelization and robustness of the meshing algorithm are facilitated by employing a rigorous surface treatment, which not only enforces prescribed quality criteria such as the Delaunay property, but also allows to decouple the subsequent parallel meshing steps. The presented approach is especially applicable for modern TCAD applications through the combination with the constructive solid geometry method, state of the art programming techniques and programming paradigms.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"82 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131516248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Simulation of self gating effect of a liquid gate carbon nanotube field effect transistor 液态栅极碳纳米管场效应晶体管自门效应的模拟
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648262
Gyudae Choe, Dong Wan Kim, J. Cheon, S. Seo, Young June Park
{"title":"Simulation of self gating effect of a liquid gate carbon nanotube field effect transistor","authors":"Gyudae Choe, Dong Wan Kim, J. Cheon, S. Seo, Young June Park","doi":"10.1109/SISPAD.2008.4648262","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648262","url":null,"abstract":"A simulation of the carbon nanotube network (CNN) based FET device is proposed. The device structure has two concentric electrodes used as source and drain, which are connected by a CNN as a semiconductor channel layer and merged into aqueous solution for sensor application. The simulation system is based on the transport equation in the CNN, the Poisson equation in the insulator, CNN, and aqueous solution with appropriate auxiliary equations for carrier statistics in the various regions. Current versus voltage relationships were obtained and compared with the measurements. The new phenomenon, hereafter called the self gating effect, has been observed.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133036908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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