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2008 International Conference on Simulation of Semiconductor Processes and Devices最新文献

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Progress in modeling of SMT “stress memorization technique” and prediction of stress enhancement by a novel PMOS SMT process SMT“应力记忆技术”建模及新型PMOS SMT工艺应力增强预测研究进展
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648251
Xin Wang, J. Wu
{"title":"Progress in modeling of SMT “stress memorization technique” and prediction of stress enhancement by a novel PMOS SMT process","authors":"Xin Wang, J. Wu","doi":"10.1109/SISPAD.2008.4648251","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648251","url":null,"abstract":"In this paper, we report progress in the modeling of stress memorization technique (SMT). We show that source/drain deformation plays a critical role in providing enhanced channel stress during SMT process. Stress enhancement as a function of the distance to gate edge of the amorphized source/drain regions is studied. We also propose a novel PMOS SMT process and demonstrate in simulation significant drive current gain additive to that of embedded SiGe process.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133000807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Three-dimensional topography simulation using advanced level set and ray tracing methods 三维地形模拟采用先进的水平集和光线追踪方法
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648303
O. Ertl, S. Selberherr
{"title":"Three-dimensional topography simulation using advanced level set and ray tracing methods","authors":"O. Ertl, S. Selberherr","doi":"10.1109/SISPAD.2008.4648303","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648303","url":null,"abstract":"We present new techniques for three-dimensional topography simulation of processes for which ballistic transport can be assumed at feature-scale. The combination of algorithms and data structures lent from the area of computer graphics allows a fast and memory saving solution of various deposition and etching processes.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115074089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Analysis and modeling of capacitance-voltage characteristics of poly-Si TFTs using device simulation 基于器件仿真的多晶硅TFTs电容电压特性分析与建模
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648268
H. Tsuji, T. Kuzuoka, Y. Kamakura, K. Taniguchi
{"title":"Analysis and modeling of capacitance-voltage characteristics of poly-Si TFTs using device simulation","authors":"H. Tsuji, T. Kuzuoka, Y. Kamakura, K. Taniguchi","doi":"10.1109/SISPAD.2008.4648268","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648268","url":null,"abstract":"The C-V characteristics of short-channel poly-Si thin-film transistors containing only a single grain boundary (GB) were investigated using a two-dimensional device simulator. It was found that the GB can cause differences in the characteristics of the gate-to-source and gate-to-drain capacitances as a function of the gate voltage, even if no bias is applied between the source and drain. A new equivalent circuit model is proposed to explain the differences in the characteristics due to the GB.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129241928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Full 3D string-level simulation of NAND flash device 全三维串级模拟NAND闪存器件
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648231
U. Kwon, M. Nakamura, Y. Ohkura, H. Ishikawa, Y. Ohji
{"title":"Full 3D string-level simulation of NAND flash device","authors":"U. Kwon, M. Nakamura, Y. Ohkura, H. Ishikawa, Y. Ohji","doi":"10.1109/SISPAD.2008.4648231","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648231","url":null,"abstract":"We present results of full 3D sting-level process and device simulation for a typical 60nm NAND flash device, whose read/program/erase characteristics are successfully simulated using the quasi-steady state simulation method. Self boosting and local-self boosting phenomena are also successfully simulated in string-level applying realistic pulse waves to the entire wordlines and string select line in a fully transient manner. The comparison between the simulation results and the experiments in various bias conditions shows the capability of our simulation methodology for the design optimization of NAND flash device in string level.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129431389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A theoretical study of electron mobility reduction due to acoustic phonon modulation in a free-standing semiconductor nanowire 独立半导体纳米线中声子调制导致电子迁移率降低的理论研究
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648294
J. Hattori, S. Uno, N. Mori, K. Nakazato
{"title":"A theoretical study of electron mobility reduction due to acoustic phonon modulation in a free-standing semiconductor nanowire","authors":"J. Hattori, S. Uno, N. Mori, K. Nakazato","doi":"10.1109/SISPAD.2008.4648294","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648294","url":null,"abstract":"Impacts of modulated acoustic phonons on electron transport in a free-standing cylindrical semiconductor nanowire are theoretically studied. We formulate the electron scattering rate and mobility limited by the intra-valley acoustic phonon scattering mechanism, using bulk and modulated acoustic phonons in a [001]-directed Si nanowire. The scattering rate calculated using modulated acoustic phonons is larger than that with bulk phonons, and therefore the mobility is smaller when modulated acoustic phonons are incorporated. These results are attributed to an increase of the form factor due to acoustic phonon modulation. The form factor increase has a universality independent of wire material and radius.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129017477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding and engineering of carrier transport in advanced MOS channels 先进MOS信道中载波传输的理解和工程
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648224
S. Takagi
{"title":"Understanding and engineering of carrier transport in advanced MOS channels","authors":"S. Takagi","doi":"10.1109/SISPAD.2008.4648224","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648224","url":null,"abstract":"Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review the basic concept on the choice of channel materials for high performance MOSFETs and address several important issues on carrier transport properties of mobility-enhanced CMOSFETs, including the effects of uniaxial strain on Si n-MOSFETs and the critical issues on Ge/III-V MOSFETs.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123127378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
3-D stress simulation using simple quasi-models of gate oxidation and Silicidation 利用简单的栅极氧化和硅化准模型进行三维应力模拟
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648283
M. Fujinaga, T. Yamauchi, S. Kamohara, A. Nishida
{"title":"3-D stress simulation using simple quasi-models of gate oxidation and Silicidation","authors":"M. Fujinaga, T. Yamauchi, S. Kamohara, A. Nishida","doi":"10.1109/SISPAD.2008.4648283","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648283","url":null,"abstract":"We present 3-D stress simulation using simple quasi-models of gate oxidation and Silicidation. We show a good agreement between simulation and experiment about dependency of NMOSFETpsilas saturation current (mobilities) on LOD (Local Oxidation Definition) and TWX (Trench Width of X-direction).","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125620636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interpretation of laser absorption measurements on 4H-SiC bipolar diodes by numerical simulation 数值模拟对4H-SiC双极二极管激光吸收测量的解释
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648244
D. Werber, G. Wachutka
{"title":"Interpretation of laser absorption measurements on 4H-SiC bipolar diodes by numerical simulation","authors":"D. Werber, G. Wachutka","doi":"10.1109/SISPAD.2008.4648244","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648244","url":null,"abstract":"The interpretation and evaluation of free carrier absorption experiments on SiC devices is essentially supported by computer simulations of the measurement process, which exploits the physical effect that the light absorption coefficient in a semiconductor depends on the electron and hole concentrations. Hence, the attenuation of a laser beam transmitted through a sample is an integral function of the local charge carrier density along the optical path. We investigated time-resolved absorption profiles in 4H-SiC pin-diodes in the high-injection regime at current densities of 100 A/cm2. Based on ldquovirtual experimentsrdquo we studied the factors limiting the spatial resolution or disturbing the absorption signal such as Fabry-Perot interferences.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126056881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF 基于EHT和tbf的gnr - fet的对比仿真研究
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648263
Ming Zhang, Qiushi Ran, X. Guan, Jinyu Zhang, Yan Wang, Zhiping Yu
{"title":"Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF","authors":"Ming Zhang, Qiushi Ran, X. Guan, Jinyu Zhang, Yan Wang, Zhiping Yu","doi":"10.1109/SISPAD.2008.4648263","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648263","url":null,"abstract":"A comparative study of graphene nanoribbon MOSFET (GNR-FET) using the extended Huckel theory (EHT) and tight-binding (TB) is conducted within the frame of the self-consistent ballistic non-equilibrium Greenpsilas function (NEGF) formalism. The bandgap variation in armchair-edged GNR (aGNR) induced by the length of the edge bond, as well as the transport characteristics with bond length relaxation, is studied in this paper. A strong structural dependence of aGNR-FET performance on the bond length is also observed and discussed.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126376902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5 六方和FCC硫系化合物Ge2Sb2Te5的能带计算
2008 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2008-10-10 DOI: 10.1109/SISPAD.2008.4648279
E. Piccinini, Thierry Tsafack, F. Buscemi, R. Brunetti, Massimo Rudan, C. Jacoboni
{"title":"Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5","authors":"E. Piccinini, Thierry Tsafack, F. Buscemi, R. Brunetti, Massimo Rudan, C. Jacoboni","doi":"10.1109/SISPAD.2008.4648279","DOIUrl":"https://doi.org/10.1109/SISPAD.2008.4648279","url":null,"abstract":"The paper addresses the calculation of the band structure for different phases of the chalcogenide Ge2Sb2Te5 compound, which is raising considerable interest in view of the applications to the nonvolatile-memory technology. The band structure is necessary for determining the charge- and heat-transport properties of the material. The band diagram of the face-centered cubic phase, which is the most important one for the operation of phase-change memories, is shown for the first time.","PeriodicalId":260253,"journal":{"name":"2008 International Conference on Simulation of Semiconductor Processes and Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125756235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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