{"title":"Fabrication of long tip AFM probes for highly coarse samples","authors":"Hyen-Wook Kang, Y. Kawashima, H. Muramatsu","doi":"10.1109/NANO.2010.5697902","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697902","url":null,"abstract":"A long polymeric tip has been fabricated for AFM measurements, which is able to image large and highly coarse objects such as biological and food samples. Two-photon adsorbed photo-polymerization technique provides a long polymeric tip onto a commercial cantilever. The length of the long polymeric tip was 90µm. Brown rice flours with ∼3µm diameter were imaged using the fabricated long tip. The result AFM image clearly showed coarse surface, which cannot be approached by a commercial tip. Since the fabricated tip has conical structure, a clear image of brown rice flours were achieved without sharp cliff-like patterns, which imaged by the commercial pyramidal shape tip.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124061064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reduction of voltage requirements for electrical cell lysis using CNT on electrode","authors":"M. Shahini, J. Yeow","doi":"10.1109/NANO.2010.5697795","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697795","url":null,"abstract":"High voltage requirement is the major limitation of integrating electrical cell lysis techniques into microchip systems. A considerable reduction of required voltage for irreversible electroporation of Escherichia coli cells has been achieved by depositing carbon nanotube (CNT) on one electrode. A microfluidic channel was made of a 75µ-thick film of kapton polyimide sandwiched between an ITO-coated sheet and a stainless steel electrode. CNT was deposited on the bottom stainless steel electrode. E. coli cells were lysed while passing through the electric field across the microchannel. Molecular probes were used to count live and dead cells, based on the intensity of emission spectrum measured by spectrofluorometer. CNTs in two different concentrations were tested in experiments. The results show that voltage requirements for irreversible lysis of E. coli cells are reduced to half with the presence of CNT on one electrode. And, the higher concentration of CNT demonstrates higher reduction in voltage requirement.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"251 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124155082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bio-inspired multiscale structures in photoelectric conversion systems and solar cells","authors":"J. Zhai","doi":"10.1109/NANO.2010.5698051","DOIUrl":"https://doi.org/10.1109/NANO.2010.5698051","url":null,"abstract":"Dye-sensitized solar cells (DSSCs) provide a technique and economic alternative concept to present p-n junction photovoltaic devices. For a DSSC, light is absorbed by a sensitizer, which is anchored to the surface of a wide band semiconductor. Charge separation takes place at the interface via photo-induced electron injection from the dye into the conduction band of the semiconductor. Nanocrystalline oxide semiconductor photo-anode films play an important role in photo-electrical conversion efficiency of DSSCs. In this review, we summarize the recent advances of DSSCs in the view of bio-inspired materials we obtained, which will provide a strategy for structure design on the novel solar cell.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121548260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soon-gil Kim, In-jae Lee, Sang-gon Kim, Jun-phill Eom, Jin-gyeong Park, Sun-mi Lee, Kyoung-hoon Chai, Joo-won Lee
{"title":"Enhancing the solar cell efficiency with optimized metal paste","authors":"Soon-gil Kim, In-jae Lee, Sang-gon Kim, Jun-phill Eom, Jin-gyeong Park, Sun-mi Lee, Kyoung-hoon Chai, Joo-won Lee","doi":"10.1109/NANO.2010.5697877","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697877","url":null,"abstract":"Aluminum (AT) back conductor paste plays an important role in the performance of the solar cells. The conversion efficiency of the solar cell depends on the properties of the Al paste. To increase the cell efficiency, the back surface field (BSF) properties should be carefully controlled by changing the thickness or the composition of Al conductor layer. As the thickness is to be thicker, BSF thickness is improved. Al powder, glass transition temperature (Tg) of glass frit, and inorganic additives are also affected the BSF properties. However, for a thin wafer, Al paste should be developed due to the bow (or sintering stress), which is generated with increasing the amount of Al. In this work, the correlation between the Si wafer bow and the amount of Al has been investigated experimentally and theoretically. The composition of back Al conductor paste was carefully controlled by changing the glass frits and adding the inorganic additives. The surface morphology and BSF uniformity were characterized by scanning electron microscopy (SEM). Although the amount of Al was increased, the bow of a thin Si wafer still remained lower than a commercial requirement, and same cell efficiency was obtained.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127763303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Manheller, S. Karthaeuser, K. Blech, U. Simon, R. Waser
{"title":"Electrical characterization of single biphenyl-propanethiol capped 4nm Au nanoparticles","authors":"M. Manheller, S. Karthaeuser, K. Blech, U. Simon, R. Waser","doi":"10.1109/NANO.2010.5697841","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697841","url":null,"abstract":"The electrical properties of single biphenyl-propanethiol (BP3) capped Au nanoparticles with a diameter of approximately 4nm immobilized in between nanoelectrodes are characterized. The total conductivity across the gap formed by the nanoelectrodes is shown to be critically dependent upon how perfectly the NP fills the gap. For nanogaps partially and completely filled with a nanoparticle, respectively, representative measurements are shown. From transport measurements characteristic molecule parameters as the tunneling barrier height of the BP3 molecules and the remaining vacuum gap-width are obtained by a combination of Simmons fit and transition voltage spectroscopy.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128989662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Experimental and theoretical investigations on the hydrolysis of dimethyl ether to methanol over H-ZSM-5","authors":"S. Namuangruk, K. Faungnawakij","doi":"10.1109/NANO.2010.5697991","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697991","url":null,"abstract":"The catalytic hydrolysis of dimethyl ether (DME) over H-ZSM-5 was studied by experimental and theoretical studies. We observed from the pack-bed reactor that this reaction yields methanol as product at low temperature (<300°C), but produces other carbon-containing species at higher temperature (>300°C). However, these observations cannot give the details of the reaction mechanisms. To clarify that how the reaction proceeds, the insight into the reaction mechanisms of DME hydrolysis have been investigated by the ONIOM2(M06/6-31G(d,p):UFF) method. Our calculations showed that DME hydrolysis catalyzed by H-ZSM-5 occur via two mechanisms; stepwise and concerted. For the stepwise mechanism the reaction starts from the demethylation of DME to form surface methoxide intermediate and then followed by the hydrolysis between methoxide intermediate and adsorbing water to produce methanol as the product. The activation barriers of this pathway are 194 and 112 kJ mol−1 for the demethylation and the hydrolysis steps, respectively. For the concerted mechanism, the demethylation and hydrolysis take place simultaneously in a single step by using 125 kJ mol−1 as the activation energy. Our results indicate that the rate-determining step of this reaction is the demethylation of DME in the stepwise mechanism of which the calculated apparent barrier is 76 kJ mol−1. This value agrees well with our experimental observation that the hydrolysis of DME to methanol over H-ZSM-5 required energy of 76 kJ mol−1.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"68 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132759157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reversible logic based concurrent error detection methodology for emerging nanocircuits","authors":"H. Thapliyal, N. Ranganathan","doi":"10.1109/NANO.2010.5697743","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697743","url":null,"abstract":"Reversible logic has promising applications in emerging nanotechnologies, such as quantum computing, quantum dot cellular automata and optical computing, etc. Faults in reversible logic circuits that result in multi-bit error at the outputs are very tough to detect, and thus in literature, researchers have only addressed the problem of online testing of faults that result single-bit error at the outputs based on parity preserving logic. In this work, we propose a methodology for the concurrent error detection in reversible logic circuits to detect faults that can result in multi-bit error at the outputs. The methodology is based on the inverse property of reversible logic and is termed as ‘inverse and compare’ method. By using the inverse property of reversible logic, all the inputs can be regenerated at the outputs. Thus, by comparing the original inputs with the regenerated inputs, the faults in reversible circuits can be detected. Minimizing the garbage outputs is one of the main goals in reversible logic design and synthesis. We show that the proposed methodology results in ‘garbageless’ reversible circuits. A design of reversible full adder that can be concurrently tested for multi-bit error at the outputs is illustrated as the application of the proposed scheme. Finally, we showed the application of the proposed scheme of concurrent error detection towards fault detection in quantum dot cellular automata (QCA) emerging nanotechnology.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127006559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Increasing the orbital angular momentum of a fractal beam","authors":"Yeong-Kwon Cho, Kihong Kim","doi":"10.1109/NANO.2010.5697898","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697898","url":null,"abstract":"Optical vortices carrying the orbital angular momentum of light can be used as the advanced information carrier to encode quantum information in optical communications. As an effective method to give a large value of o ptical vortex charge to the light, we pro pose the method using a coherent superposition of many Gaussian beams with radial symmetry and self-similarity. By adjusting the initial phases of the constituent beams in a multibeam, the vortex charge at the beam center either becomes very large or evenly disappears. We find the optimal condition for the largest vortex charge.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130516205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mitigation of surface doping in VLS-grown Si nanowires","authors":"J. Hyun, E. Hemesath, L. Lauhon","doi":"10.1109/NANO.2010.5698055","DOIUrl":"https://doi.org/10.1109/NANO.2010.5698055","url":null,"abstract":"Semiconducting nanowires grown by the VLS method can develop non-uniform doping profiles along the growth direction due to unintentional surface doping during synthesis. For CVD growth using hydride precursors, surface doping can be suppressed by high H2 partial pressures, thereby improving the uniformity of the dopant distribution. Quantitative calculations of the electrostatic field and carrier concentration derived from scanning photocurrent microscopy measurements confirm suppression of surface doping by phosphine for Si nanowires grown in H2 compared with those grown in He. Nanowires grown in He show 100-fold increases in carrier concentration through surface doping, whereas nanowires grown in a large H2 partial pressure show only two-fold increases for similar growth times. As a result, the carrier concentration gradients are greatly reduced for nanowires grown in H2. These results demonstrate a general approach to in situ control of the surface doping in CVD of nanowires.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117068120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Semiconducting-enriched printed carbon nanotube mat used for fabrication of thin film transistors","authors":"N. Rouhi, D. Jain, K. Zand, P. Burke","doi":"10.1109/NANO.2010.5697793","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697793","url":null,"abstract":"Semiconducting nanotubes, theoretically, offer great promise for a variety of applications in RF and microwave electronics. In this work, we present device performance of thin-film transistors fabricated using a spin-coating purified all-semiconducting nanotubes that is economical and lends itself to mass manufacturing of nanotube electronics.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131200624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}