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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997最新文献

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Dark current-voltage measurements on photovoltaic modules as a diagnostic or manufacturing tool 作为诊断或制造工具的光伏组件暗电流-电压测量
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-10-01 DOI: 10.1109/PVSC.1997.654286
D. King, B. Hansen, J. Kratochvil, M. Quintana
{"title":"Dark current-voltage measurements on photovoltaic modules as a diagnostic or manufacturing tool","authors":"D. King, B. Hansen, J. Kratochvil, M. Quintana","doi":"10.1109/PVSC.1997.654286","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654286","url":null,"abstract":"Dark current-voltage (dark I-V) measurements are commonly used to analyze the electrical characteristics of solar cells, providing an effective way to determine fundamental performance parameters without the need for a solar simulator. The dark I-V measurement procedure does not provide information regarding short-circuit current, but is more sensitive than light I-V measurements in determining the other parameters (series resistance, shunt resistance, diode factor and diode saturation currents) that dictate the electrical performance of a photovoltaic device. The work documented here extends the use of dark I-V measurements to photovoltaic modules, illustrates their use in diagnosing module performance losses and proposes their use for process monitoring during manufacturing.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125421516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 80
Solar array model corrections from Mars Pathfinder Lander data 从火星探路者着陆器数据修正太阳能电池阵列模型
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-30 DOI: 10.1109/PVSC.1997.654262
R.C. Ewell, D. Burger
{"title":"Solar array model corrections from Mars Pathfinder Lander data","authors":"R.C. Ewell, D. Burger","doi":"10.1109/PVSC.1997.654262","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654262","url":null,"abstract":"The MESUR solar array power model for the Mars Pathfinder spacecraft initially assumed values for input variables. After landing, early surface variables such as array tilt and azimuth or early environmental variables such as array temperature can be corrected. Correction of later environmental variables such as tau versus time, spectral shift, dust deposition and UV darkening is dependent upon time, on-board science instruments and the ability to separate effects of variables. Engineering estimates had to be made for additional shadow losses and Voc sensor temperature corrections. Some variations had not been expected such as tau versus time of day and spectral shift versus time of day. Additions needed to the model are thermal mass of lander petal and correction between Voc sensor and temperature sensor. Conclusions are: the model works well; good battery predictions are difficult; inclusion of Isc and Voc sensors was valuable; and the IMP and MAE science experiments greatly assisted the data analysis and model correction.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127890297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Extended performance analysis of 70 PV systems in Japanese field test program 日本70个光伏系统现场测试项目的扩展性能分析
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654314
K. Kurokawa, H. Sugiyama, D. Uchida, K. Sakuta, K. Sakamoto, T. Ohshiro, T. Matsuo, T. Katagiri
{"title":"Extended performance analysis of 70 PV systems in Japanese field test program","authors":"K. Kurokawa, H. Sugiyama, D. Uchida, K. Sakuta, K. Sakamoto, T. Ohshiro, T. Matsuo, T. Katagiri","doi":"10.1109/PVSC.1997.654314","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654314","url":null,"abstract":"Under the Government Basic Guidelines for the new energy introduction, New Energy Development and Industrial Technology Organization (NEDO) installed and is installing 177 PV sites having a total capacity of 4860 kW from FY1992 to FY1997. Those systems have been being monitored and all the data have been collected by Japan Quality Assurance Organization (JQA). Simple operational reports have been compiled from the beginning of the project. More detailed, systematic performance analysis routine has been introduced to the existing database. Analyzed performance parameters are given by a set of 2 graphs. Detailed parameter definitions and analyzed results for selected sites are given. Statistical evaluation for the 70 available systems are also presented.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116899811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Comparison of Al/sub 0.51/In/sub 0.49/P and Ga/sub 0.51/In/sub 0.49/P window layers for GaAs and GaInAsP solar cells GaAs和GaInAsP太阳能电池Al/sub 0.51/In/sub 0.49/P和Ga/sub 0.51/In/sub 0.49/P窗口层的比较
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654230
R. Jaakkola, J. Lammasniemi, A. Kazantsev, K. Tappura
{"title":"Comparison of Al/sub 0.51/In/sub 0.49/P and Ga/sub 0.51/In/sub 0.49/P window layers for GaAs and GaInAsP solar cells","authors":"R. Jaakkola, J. Lammasniemi, A. Kazantsev, K. Tappura","doi":"10.1109/PVSC.1997.654230","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654230","url":null,"abstract":"Two window layer materials, Al/sub 0.51/In/sub 0.49/P (E/sub g/=2.3 eV) and Ga/sub 0.51/In/sub 0.49/P (E/sub g/=1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ (E/sub g/=1.55 eV) solar cells. Due to the wider band-gap of Al/sub 0.51/In/sub 0.49/P, the increased spectral response was observed for both GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm/sup 2/ to 34.4 mA/cm/sup 2/ with the Al/sub 0.51/In/sub 0.49/P window layer at AM0. Similar improvement was observed for the Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ solar cells.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116943433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Relationships between room temperature photoluminescence and electronic quality in multicrystalline silicon 多晶硅室温光致发光与电子质量的关系
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.653938
Y. Koshka, S. Ostapenko, J. Cao, J. Kalejs
{"title":"Relationships between room temperature photoluminescence and electronic quality in multicrystalline silicon","authors":"Y. Koshka, S. Ostapenko, J. Cao, J. Kalejs","doi":"10.1109/PVSC.1997.653938","DOIUrl":"https://doi.org/10.1109/PVSC.1997.653938","url":null,"abstract":"We report here on a relationship between room temperature photoluminescence (RTPL) intensity in crystalline silicon and bulk material diffusion length improvements used to track solar cell performance. We present RTPL spectra and data on spatially resolved photoluminescence mapping over 100 cm/sup 2/ area EFG multicrystalline silicon wafers subjected to solar cell processing steps. A dramatic increase of band-to-band PL intensity by more than two orders of magnitude occurs after combined phosphorus diffusion, hydrogen passivation and aluminum alloying. This indicates that a large reduction in nonradiative recombination occurs during processing steps which improve cell efficiency through bulk minority carrier lifetime upgrading.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121375415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Rigid type solar array panels [for space power] 刚性太阳能电池阵列板[用于空间动力]
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654263
T. Horie, M. Okubo, M. Goto
{"title":"Rigid type solar array panels [for space power]","authors":"T. Horie, M. Okubo, M. Goto","doi":"10.1109/PVSC.1997.654263","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654263","url":null,"abstract":"There are two types of solar cells arrays for space power use under production for the international commercial satellite market. One is made from single crystal silicon that has been used since early state of satellite development. The other is a GaAs solar cell made from GaAs on a Ge wafer substrate. This paper compares these solar cells from the point of the solar panel performances and cost.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124805555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dark currents in double-heterostructure and quantum-well solar cells 双异质结构和量子阱太阳能电池中的暗电流
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654238
R. Corkish, C. Honsberg
{"title":"Dark currents in double-heterostructure and quantum-well solar cells","authors":"R. Corkish, C. Honsberg","doi":"10.1109/PVSC.1997.654238","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654238","url":null,"abstract":"Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-Fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125432566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Effect of front-surface doping on back-surface passivation in Ga/sub 0.5/In/sub 0.5/P cells 前表面掺杂对Ga/sub 0.5/ in /sub 0.5/P电池后表面钝化的影响
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654213
S. Kurtz, J. Olson, D. Friedman, R. Reedy
{"title":"Effect of front-surface doping on back-surface passivation in Ga/sub 0.5/In/sub 0.5/P cells","authors":"S. Kurtz, J. Olson, D. Friedman, R. Reedy","doi":"10.1109/PVSC.1997.654213","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654213","url":null,"abstract":"The emitter doping of a solar cell usually affects the blue response of the cell because the blue light is strongly absorbed at the front of the cell in the emitter layer. However, we show here that changing the identity of the dopant at the front of the cell affects the performance of the back of the cell, sometimes more than the performance of the front of the cell. Specifically, a highly Zn-doped Ga/sub 0.5/In/sub 0.5/P layer makes a good back-surface field in an n-on-p Ga/sub 0.5/In/sub 0.5/P cell with Se doping, but not when Si doping is used, consistent with the results of Takamoto, et al. During growth of the n-type layers, Zn diffuses up through the cell, piling up at the junction. When Si doping is used, the diffusion is enhanced.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116393124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
PV technology and success of solar electricity in Vietnam 光伏技术和太阳能发电在越南的成功
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654329
T. Q. Dũng
{"title":"PV technology and success of solar electricity in Vietnam","authors":"T. Q. Dũng","doi":"10.1109/PVSC.1997.654329","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654329","url":null,"abstract":"Since 1990 the PV technology and solar electricity have been strongly developed in Vietnam. The PV experts of Solarlab have studied and set up an appropriate PV technology responding almost to local market needs. It has not only stood well but has also been transferred to Mali Republic and Lao PDR. The PV off grid systems of Solarlab demonstrates good efficiency and low prices. Over 60 solar stations and villages have been built to provide solar lighting for about 3000 families along the country in remote, mountainous areas and islands. Approximately 400 families are using stand-alone Solar Home Systems. The solar electricity has been chosen for rural electrification and the national telecommunication network in remote and mountainous regions. Many international projects in cooperation with FONDEM-France, SELF USA and Governmental PV projects have been realized by Solarlab. The experiences of maintenance, management and finance about PV development in Vietnam are also mentioned.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122298317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Progress toward technology transition of GaInP/sub 2//GaAs/Ge multijunction solar cells GaInP/ sub2 //GaAs/Ge多结太阳能电池技术转型研究进展
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI: 10.1109/PVSC.1997.654207
D. Keener, D. Marvin, D. Brinker, H. Curtis, P. Price
{"title":"Progress toward technology transition of GaInP/sub 2//GaAs/Ge multijunction solar cells","authors":"D. Keener, D. Marvin, D. Brinker, H. Curtis, P. Price","doi":"10.1109/PVSC.1997.654207","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654207","url":null,"abstract":"The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP/sub 2//GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase I deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP/sub 2//GaAs/Ge solar cells are presented.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122197026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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