GaAs和GaInAsP太阳能电池Al/sub 0.51/In/sub 0.49/P和Ga/sub 0.51/In/sub 0.49/P窗口层的比较

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654230

R. Jaakkola, J. Lammasniemi, A. Kazantsev, K. Tappura

{"title":"GaAs和GaInAsP太阳能电池Al/sub 0.51/In/sub 0.49/P和Ga/sub 0.51/In/sub 0.49/P窗口层的比较","authors":"R. Jaakkola, J. Lammasniemi, A. Kazantsev, K. Tappura","doi":"10.1109/PVSC.1997.654230","DOIUrl":null,"url":null,"abstract":"Two window layer materials, Al/sub 0.51/In/sub 0.49/P (E/sub g/=2.3 eV) and Ga/sub 0.51/In/sub 0.49/P (E/sub g/=1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ (E/sub g/=1.55 eV) solar cells. Due to the wider band-gap of Al/sub 0.51/In/sub 0.49/P, the increased spectral response was observed for both GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm/sup 2/ to 34.4 mA/cm/sup 2/ with the Al/sub 0.51/In/sub 0.49/P window layer at AM0. Similar improvement was observed for the Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ solar cells.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comparison of Al/sub 0.51/In/sub 0.49/P and Ga/sub 0.51/In/sub 0.49/P window layers for GaAs and GaInAsP solar cells\",\"authors\":\"R. Jaakkola, J. Lammasniemi, A. Kazantsev, K. Tappura\",\"doi\":\"10.1109/PVSC.1997.654230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two window layer materials, Al/sub 0.51/In/sub 0.49/P (E/sub g/=2.3 eV) and Ga/sub 0.51/In/sub 0.49/P (E/sub g/=1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ (E/sub g/=1.55 eV) solar cells. Due to the wider band-gap of Al/sub 0.51/In/sub 0.49/P, the increased spectral response was observed for both GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm/sup 2/ to 34.4 mA/cm/sup 2/ with the Al/sub 0.51/In/sub 0.49/P window layer at AM0. Similar improvement was observed for the Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ solar cells.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

对气源和固源MBE生长的GaAs和Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ (E/sub g/=1.55 eV)太阳能电池的两种窗层材料Al/sub 0.51/In/sub 0.49/P (E/sub g/=2.3 eV)和Ga/sub 0.51/In/sub 0.49/P (E/sub g/=1.88 eV)进行了比较。由于Al/sub 0.51/In/sub 0.49/P的带隙更宽，GaAs和Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/材料基太阳能电池的光谱响应都有所增加。在GaAs电池的情况下，观察到短路电流密度从32.5 mA/cm/sup 2/增加到34.4 mA/cm/sup 2/， Al/sub 0.51/In/sub 0.49/P窗口层在AM0。Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/太阳能电池也有类似的改进。

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Comparison of Al/sub 0.51/In/sub 0.49/P and Ga/sub 0.51/In/sub 0.49/P window layers for GaAs and GaInAsP solar cells

Two window layer materials, Al/sub 0.51/In/sub 0.49/P (E/sub g/=2.3 eV) and Ga/sub 0.51/In/sub 0.49/P (E/sub g/=1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ (E/sub g/=1.55 eV) solar cells. Due to the wider band-gap of Al/sub 0.51/In/sub 0.49/P, the increased spectral response was observed for both GaAs and Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm/sup 2/ to 34.4 mA/cm/sup 2/ with the Al/sub 0.51/In/sub 0.49/P window layer at AM0. Similar improvement was observed for the Ga/sub 0.84/In/sub 0.16/As/sub 0.68/P/sub 0.32/ solar cells.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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