发布求助
文献互助 智能选刊 最新文献

Ion Beam Modification of Materials最新文献

筛选
英文 中文
Activation of Mg after Implantation in si-InP by means of EB-RTA 用EB-RTA法研究si-InP注入后Mg的活化
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50177-5
C. Maurer, R. Kallweit, K. Bethge
{"title":"Activation of Mg after Implantation in si-InP by means of EB-RTA","authors":"C. Maurer, R. Kallweit, K. Bethge","doi":"10.1016/B978-0-444-82334-2.50177-5","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50177-5","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130854734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interfacial Amorphization and Improved Ion Beam Induced Crystallization of (100)-GaAs (100)-GaAs的界面非晶化和改进离子束诱导结晶
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50173-8
E. Glaser, T. Bachmann, R. Schulz, U. Richter
{"title":"Interfacial Amorphization and Improved Ion Beam Induced Crystallization of (100)-GaAs","authors":"E. Glaser, T. Bachmann, R. Schulz, U. Richter","doi":"10.1016/B978-0-444-82334-2.50173-8","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50173-8","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128342437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic properties of defects introduced during sputter deposition of Cr Schottky contacts on GaAs 砷化镓上溅射沉积Cr肖特基触点缺陷的电子特性
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50170-2
Y. Leclerc, F. Auret, S. A. Goodman, G. Myburg, C. Schutte
{"title":"Electronic properties of defects introduced during sputter deposition of Cr Schottky contacts on GaAs","authors":"Y. Leclerc, F. Auret, S. A. Goodman, G. Myburg, C. Schutte","doi":"10.1016/B978-0-444-82334-2.50170-2","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50170-2","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131633586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low Energy Light Ion Sputtering of Metals and Carbides 金属和碳化物的低能光离子溅射
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1080/00337578008209256
J. Roth, J. Bohdansky, A. Martinelli
{"title":"Low Energy Light Ion Sputtering of Metals and Carbides","authors":"J. Roth, J. Bohdansky, A. Martinelli","doi":"10.1080/00337578008209256","DOIUrl":"https://doi.org/10.1080/00337578008209256","url":null,"abstract":"Abstract For a great number of ion-target combinations similarities in low energy sputtering have been found. 11Near the threshold energy for sputtering E th, the energy dependence of the sputtering yield can be written as S = Y (E/E th)1/4 (1 – E h/E)7/2, E th and Y depend only on the surface binding energy E B and the ion-target atom mass ratio. Using this relation the energy dependence of the sputtering yield of B4C, SiC, TiC, TaC, WC is compared with the yields from S, Si, Ti, Ta, W, for H, D and He in the energy range of 50 eV to 8 keV. A strong similarity of the energy dependence, i.e. Eth , and Y, can be found between the carbide and the heavier component of the compound. This leads to the assumption, that the target surface is depleted of the light component due to preferential sputtering and the sputtering process is dominated by the heavy component.","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131288907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
Ion Beam Enhanced Electrical Conductivity in Polymers 离子束增强聚合物的导电性
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50211-2
D. Ila, R. Zimmerman, G. Jenkins, A. Evelyn, H. Maleki, J. Fisher, D. Poker
{"title":"Ion Beam Enhanced Electrical Conductivity in Polymers","authors":"D. Ila, R. Zimmerman, G. Jenkins, A. Evelyn, H. Maleki, J. Fisher, D. Poker","doi":"10.1016/B978-0-444-82334-2.50211-2","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50211-2","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116927624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of ion implantation energy of Er on defects and Er-gettering in silicon 铒离子注入能对硅中缺陷和铒吸积的影响
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50190-8
A. Majima, S. Uekusa, K. Shimazu, H. Takano
{"title":"Effects of ion implantation energy of Er on defects and Er-gettering in silicon","authors":"A. Majima, S. Uekusa, K. Shimazu, H. Takano","doi":"10.1016/B978-0-444-82334-2.50190-8","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50190-8","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123922442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Amorphization of ZnSe by ion implantation at low temperatures 离子注入对ZnSe低温非晶化的影响
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50179-9
S. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, ISOLDE-Collaboration
{"title":"Amorphization of ZnSe by ion implantation at low temperatures","authors":"S. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, ISOLDE-Collaboration","doi":"10.1016/B978-0-444-82334-2.50179-9","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50179-9","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121952414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
XPS study of vapour deposited wear-resistant coatings implanted with nitrogen and carbon ions 氮碳离子注入气相沉积耐磨涂层的XPS研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50207-0
H. Stock, H. Berndt, F. Höhl, F. Seidel, P. Mayr
{"title":"XPS study of vapour deposited wear-resistant coatings implanted with nitrogen and carbon ions","authors":"H. Stock, H. Berndt, F. Höhl, F. Seidel, P. Mayr","doi":"10.1016/B978-0-444-82334-2.50207-0","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50207-0","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122028882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Focussed ion beam lithography using a MeV proton beam microprobe for microoptics fabrication 利用MeV质子束微探针聚焦离子束光刻技术进行微光学制造
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50226-4
L. M. Mason, A. Roberts, D. Jamieson, A. Saint
{"title":"Focussed ion beam lithography using a MeV proton beam microprobe for microoptics fabrication","authors":"L. M. Mason, A. Roberts, D. Jamieson, A. Saint","doi":"10.1016/B978-0-444-82334-2.50226-4","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50226-4","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123212332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phosphorus Doping and Passivation Processes for Poly and Monocrystalline Silicon Using Ion Plasma Source 离子等离子体源对多晶硅和单晶硅的磷掺杂和钝化工艺研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50157-X
B. Mukashev, M. F. Tamendarov, T. B. Tashenov, A. Mukhitdinov
{"title":"Phosphorus Doping and Passivation Processes for Poly and Monocrystalline Silicon Using Ion Plasma Source","authors":"B. Mukashev, M. F. Tamendarov, T. B. Tashenov, A. Mukhitdinov","doi":"10.1016/B978-0-444-82334-2.50157-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50157-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123528607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信