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Ion Beam Modification of Materials最新文献

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Electrical characterization of defects introduced in n-GaAs by carbon-ion irradiation 碳离子辐照引入n-GaAs缺陷的电学表征
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50169-6
S. A. Goodman, F. Auret, G. Myburg
{"title":"Electrical characterization of defects introduced in n-GaAs by carbon-ion irradiation","authors":"S. A. Goodman, F. Auret, G. Myburg","doi":"10.1016/B978-0-444-82334-2.50169-6","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50169-6","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125531551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Correlation between End-Of-range defect densities and electrical properties of p + /n junctions formed by B implantation into Ge-preamorphised Si substrates 锗预非晶硅衬底中B注入形成的p + /n结末端缺陷密度与电学性能的关系
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50152-0
D. Alquier, C. Bergaud, Augustin Martinez, M. Minondo, C. Jaussaud, L. Laânab, C. Bonafos, A. Qaverie
{"title":"Correlation between End-Of-range defect densities and electrical properties of p + /n junctions formed by B implantation into Ge-preamorphised Si substrates","authors":"D. Alquier, C. Bergaud, Augustin Martinez, M. Minondo, C. Jaussaud, L. Laânab, C. Bonafos, A. Qaverie","doi":"10.1016/B978-0-444-82334-2.50152-0","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50152-0","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128930869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
THE EFFECT OF ION-BEAM INDUCED STRAIN ON THE NUCLEATION DENSITY OF CHEMICAL VAPOUR DEPOSITED DIAMOND. 离子束诱导应变对化学气相沉积金刚石成核密度的影响。
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50143-X
P. Weiser, S. Prawer, K. Nugent, A. Bettiol, L. I. Kostidis, S. P. Dooley, D. Jamieson
{"title":"THE EFFECT OF ION-BEAM INDUCED STRAIN ON THE NUCLEATION DENSITY OF CHEMICAL VAPOUR DEPOSITED DIAMOND.","authors":"P. Weiser, S. Prawer, K. Nugent, A. Bettiol, L. I. Kostidis, S. P. Dooley, D. Jamieson","doi":"10.1016/B978-0-444-82334-2.50143-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50143-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124582305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Range straggling of 1 H and 2 H in crystalline matrices 结晶基质中氢和氢的范围分散
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50128-3
S. Nakagawa, L. Thomé, H. Saito, R. Wilson, C. Clerc
{"title":"Range straggling of 1 H and 2 H in crystalline matrices","authors":"S. Nakagawa, L. Thomé, H. Saito, R. Wilson, C. Clerc","doi":"10.1016/B978-0-444-82334-2.50128-3","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50128-3","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124716912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect Evolution in Hydrogen Implanted Silicon 氢注入硅的缺陷演化
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50161-1
C. Ascheron, J. Wong-Leung, M. Petravić, James S. Williams
{"title":"Defect Evolution in Hydrogen Implanted Silicon","authors":"C. Ascheron, J. Wong-Leung, M. Petravić, James S. Williams","doi":"10.1016/B978-0-444-82334-2.50161-1","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50161-1","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116159924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Transient Analysis of Semiconductor Devices Using an MeV Ion Microprobe. 用MeV离子微探针分析半导体器件的瞬态。
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50227-6
J. Laird, R. Bardos, G. Moloney, A. Saint, G. Legge
{"title":"Transient Analysis of Semiconductor Devices Using an MeV Ion Microprobe.","authors":"J. Laird, R. Bardos, G. Moloney, A. Saint, G. Legge","doi":"10.1016/B978-0-444-82334-2.50227-6","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50227-6","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115964427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Property Changes of Sapphire Induced by Ion Implantation. 离子注入诱导蓝宝石光学性质的变化。
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50218-5
M. Ikeyama, M. Tazawa, H. Morikawa, A. Chayahara
{"title":"Optical Property Changes of Sapphire Induced by Ion Implantation.","authors":"M. Ikeyama, M. Tazawa, H. Morikawa, A. Chayahara","doi":"10.1016/B978-0-444-82334-2.50218-5","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50218-5","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133346966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Depth profiling of 27 A1 + implanted samples by NRA 27例A1 +植入样品的NRA深度分析
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50130-1
M. Hayes, E. Friedland, S. Kalbitzer, B. Hartmann, S. Fabian
{"title":"Depth profiling of 27 A1 + implanted samples by NRA","authors":"M. Hayes, E. Friedland, S. Kalbitzer, B. Hartmann, S. Fabian","doi":"10.1016/B978-0-444-82334-2.50130-1","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50130-1","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129327397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Formation of metallic colloids in silica by high-energy ion-beam mixing 高能离子束混合在二氧化硅中形成金属胶体
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50183-0
F. Garrido, J. Dran, L. Thomé, G. Mea, G. Maggioni
{"title":"Formation of metallic colloids in silica by high-energy ion-beam mixing","authors":"F. Garrido, J. Dran, L. Thomé, G. Mea, G. Maggioni","doi":"10.1016/B978-0-444-82334-2.50183-0","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50183-0","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124390684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion-induced silicide formation in niobium thin films 铌薄膜中离子诱导硅化物的形成
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1080/00337577908209140
S. Matteson, J. Rothi, M. Nicolet
{"title":"Ion-induced silicide formation in niobium thin films","authors":"S. Matteson, J. Rothi, M. Nicolet","doi":"10.1080/00337577908209140","DOIUrl":"https://doi.org/10.1080/00337577908209140","url":null,"abstract":"Abstract MeV 4He backscattering and X-ray diffraction analysis were used to examine the intermixing of niobium thin films on single-crystal silicon during 28Si+ ion bombardment. The ambient temperature dependence of the intermixing is reported. The dependence cannot be explained by either radiation-enhanced diffusion or cascade mixing alone. The silicides, NbSi2, and Nb5Si3, were both observed. Silicide growth was found to be proportional to the square root of the fluence for the case in which the ion range exceeds the film thickness.","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115991030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 107
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