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Ion Beam Modification of Materials最新文献

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Tribological characterization of ion implanted PMMA films 离子注入PMMA薄膜的摩擦学特性
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50215-X
J. Koskinen, D. Rück, J. Hirvonen, P. Torri
{"title":"Tribological characterization of ion implanted PMMA films","authors":"J. Koskinen, D. Rück, J. Hirvonen, P. Torri","doi":"10.1016/B978-0-444-82334-2.50215-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50215-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129050260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study on the mechanism of hardening by high energy ion implantation taking notice of solid solubility 考虑固体溶解度的高能离子注入硬化机理研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50209-4
M. Kumagai, H. Saito, K. Yabuta, K. Higeta, M. Sato, Y. Motomami, Y. Yoshida, M. Satou
{"title":"A study on the mechanism of hardening by high energy ion implantation taking notice of solid solubility","authors":"M. Kumagai, H. Saito, K. Yabuta, K. Higeta, M. Sato, Y. Motomami, Y. Yoshida, M. Satou","doi":"10.1016/B978-0-444-82334-2.50209-4","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50209-4","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116206217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
STUDIES OF DEFECTS ON ION IRRADIATTED DIAMOND 离子辐照金刚石缺陷的研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50201-X
P. Lai, S. Prawer, A. Spargo, L. Bursill, C. Noble
{"title":"STUDIES OF DEFECTS ON ION IRRADIATTED DIAMOND","authors":"P. Lai, S. Prawer, A. Spargo, L. Bursill, C. Noble","doi":"10.1016/B978-0-444-82334-2.50201-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50201-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126900681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ceramic thermal barrier films prepared with a technique of combining ion, electron and atom beams 用离子、电子和原子束结合技术制备的陶瓷热障膜
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50142-8
N. Huang
{"title":"Ceramic thermal barrier films prepared with a technique of combining ion, electron and atom beams","authors":"N. Huang","doi":"10.1016/B978-0-444-82334-2.50142-8","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50142-8","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modification of the Electrical Response of Diamond Using MeV-Ion Implantation and Pulsed Laser Annealing mev离子注入和脉冲激光退火对金刚石电响应的影响
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50198-2
R. Walker, S. Prawer, D. Jamieson, R. Kalish
{"title":"Modification of the Electrical Response of Diamond Using MeV-Ion Implantation and Pulsed Laser Annealing","authors":"R. Walker, S. Prawer, D. Jamieson, R. Kalish","doi":"10.1016/B978-0-444-82334-2.50198-2","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50198-2","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116582028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Annealing Behaviour of Implanted Nitrogen in n-type InP n型InP中注入氮的退火行为研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50175-1
J. Likonen, K. Väkeväinen, T. Ahlgren, J. Räisänen, E. Rauhala, J. Keinonen
{"title":"Investigation of the Annealing Behaviour of Implanted Nitrogen in n-type InP","authors":"J. Likonen, K. Väkeväinen, T. Ahlgren, J. Räisänen, E. Rauhala, J. Keinonen","doi":"10.1016/B978-0-444-82334-2.50175-1","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50175-1","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130837857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nitrogen Ion Implantation into Glassy Carbon and Diamond. 氮离子注入玻璃碳和金刚石。
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50199-4
D. Barbara, S. Prawer, S. Withrow, J. Williams, D. Jamieson, A. Saint, S. P. Dooley
{"title":"Nitrogen Ion Implantation into Glassy Carbon and Diamond.","authors":"D. Barbara, S. Prawer, S. Withrow, J. Williams, D. Jamieson, A. Saint, S. P. Dooley","doi":"10.1016/B978-0-444-82334-2.50199-4","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50199-4","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130918933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion beam synthesis of strain-relieved Si 1-x Ge x layers on SIMOX SIMOX上应变解除Si 1-x Ge x层的离子束合成
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50188-X
B. Holländer, S. Mantl, W. Michelsen, S. Mesters, L. Vescan, D. Gerthsen
{"title":"Ion beam synthesis of strain-relieved Si 1-x Ge x layers on SIMOX","authors":"B. Holländer, S. Mantl, W. Michelsen, S. Mesters, L. Vescan, D. Gerthsen","doi":"10.1016/B978-0-444-82334-2.50188-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50188-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130920857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of S+-implanted GaAs annealed by covering with As-doped a-Si:H films 掺杂as的a-Si:H薄膜覆盖退火S+注入GaAs的电学性质
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50174-X
M. Sakaguchi, K. Yokota, A. Shiomi, H. Mori, Masanori Watanabe, T. Takagi, K. Hirai, H. Takano, M. Kumagai
{"title":"Electrical properties of S+-implanted GaAs annealed by covering with As-doped a-Si:H films","authors":"M. Sakaguchi, K. Yokota, A. Shiomi, H. Mori, Masanori Watanabe, T. Takagi, K. Hirai, H. Takano, M. Kumagai","doi":"10.1016/B978-0-444-82334-2.50174-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50174-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115718328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of TiO 2 Films as a Photocatalytic Material by Ion Beam Assisted Reactive Deposition Method – TDS Study of Ar Atom Incorporation in the TiO 2 Films 离子束辅助反应沉积法制备光催化材料tio2膜- tio2膜中Ar原子掺入的TDS研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50137-4
M. Sasase, T. Yamaki, K. Miyake, I. Takano, S. Isobe
{"title":"Formation of TiO 2 Films as a Photocatalytic Material by Ion Beam Assisted Reactive Deposition Method – TDS Study of Ar Atom Incorporation in the TiO 2 Films","authors":"M. Sasase, T. Yamaki, K. Miyake, I. Takano, S. Isobe","doi":"10.1016/B978-0-444-82334-2.50137-4","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50137-4","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123919418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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