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Ion Beam Modification of Materials最新文献

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Electronic stopping powers of 80–350 keV 19 F ions in Ta, Nb, Ti refractory metals and Ni 0.8 Fe 0.2 alloy 80 - 350kev - 19f离子在Ta、Nb、Ti难熔金属和Ni 0.8 Fe 0.2合金中的电子停止能力
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50124-6
C. Tan, Y. Xia, Ji-Tain Liu, Xiangdong Liu, Fengxiang Wang
{"title":"Electronic stopping powers of 80–350 keV 19 F ions in Ta, Nb, Ti refractory metals and Ni 0.8 Fe 0.2 alloy","authors":"C. Tan, Y. Xia, Ji-Tain Liu, Xiangdong Liu, Fengxiang Wang","doi":"10.1016/B978-0-444-82334-2.50124-6","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50124-6","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125831072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
No heat assistance crystallinity improvement of epitaxial CeO 2 /Si by high energy ion irradiation 高能离子辐照对外延ceo2 /Si结晶度无助热改善作用
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50220-3
M. Satoh, Y. Sone, Yasuhiro Yamamoto, Tomoyasu Inoue, H. Kudo
{"title":"No heat assistance crystallinity improvement of epitaxial CeO 2 /Si by high energy ion irradiation","authors":"M. Satoh, Y. Sone, Yasuhiro Yamamoto, Tomoyasu Inoue, H. Kudo","doi":"10.1016/B978-0-444-82334-2.50220-3","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50220-3","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115620816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Calculation of the energy deposition value for argon ion beam bombarded silicon on the basis of the plural interaction model 基于复数相互作用模型的氩离子束轰击硅的能量沉积值计算
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50126-X
V. A. Eltekov, N. N. Negrebetskaya
{"title":"Calculation of the energy deposition value for argon ion beam bombarded silicon on the basis of the plural interaction model","authors":"V. A. Eltekov, N. N. Negrebetskaya","doi":"10.1016/B978-0-444-82334-2.50126-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50126-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114747451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flux and temperature dependence of amorphisation of GaAs irradiated with Si ions. 硅离子辐照下砷化镓非晶化的通量和温度依赖性。
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50168-4
R. Brown, James S. Williams
{"title":"Flux and temperature dependence of amorphisation of GaAs irradiated with Si ions.","authors":"R. Brown, James S. Williams","doi":"10.1016/B978-0-444-82334-2.50168-4","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50168-4","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124318225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Depth Profiling of D Implanted into Ti at Different Temperatures 不同温度下D注入Ti的深度分布
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1080/00337578008209259
J. Roth, W. Eckstein, J. Bohdansky
{"title":"Depth Profiling of D Implanted into Ti at Different Temperatures","authors":"J. Roth, W. Eckstein, J. Bohdansky","doi":"10.1080/00337578008209259","DOIUrl":"https://doi.org/10.1080/00337578008209259","url":null,"abstract":"Abstract Depth proliles of 6.6 keV D+ implanted into titanium in the temperature range between 140 K and 500 K have been studied using the D(3He, α) H nuclear reaction. At 140 K the trapped amount is close to 100% at low doses and reaches saturation at about 2 × 1018D/cm2, whereas at room temperature no saturation could be reached up to 2 × 1019 D/cm2. At higher temperatures the amount decreases until no deuterium could be detected in the surface layer above 500 K. The depth profiles are strongly dependent on temperature. At 140 K the deuterium is found in a surface layer of about 2000 A with a maximum ratio of deuterium to metal atoms of 2.5. At room temperature a hydride layer of TiD1.8, forms. The thickness of the hydride layer depends on deuterium dose and extends to 1.5 μm at 2 × 1019 D/cm2. At higher temperatures the atom concentrations are lower and the deuterium seems to diffuse deeply into the bulk. These results are discussed in terms of diffusion of deuterium i n Ti and titanium hydride.","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123415655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Implantation of 5_keV Deuterium in BeO 5_keV氘在BeO中的注入
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1080/00337578008209257
R. Behrisch, R. Blewer, J. Borders, R. A. Langley, J. Roth, B. Scherzer, R. Schulz
{"title":"Implantation of 5_keV Deuterium in BeO","authors":"R. Behrisch, R. Blewer, J. Borders, R. A. Langley, J. Roth, B. Scherzer, R. Schulz","doi":"10.1080/00337578008209257","DOIUrl":"https://doi.org/10.1080/00337578008209257","url":null,"abstract":"Abstract The trapping of 5 keV deuterium in ∼ 165 and ∼ 4000 nm thick BeO films grown by thermal oxidation on Be substrates was investigated at different temperatures using the D(3He,H)4He nuclear reaction. The ratio of implanted D to BeO molecules obtained at saturation is 0.24 to 0.34. The D migrates from its end of range location and distributes itself uniformly in the BeO film. With increasing implant temperature the BeO layer flakes from the Be substrate. The distribution of D in BeO films at high concentrations is not consistent with diffusivity measurements at low concentrations of T in BeO.","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123579619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
EFFECTS OF MeV ION IRRADIATION ON CRYSTALLIZATION OF AMORPHOUS Ge FILMS MeV离子辐照对非晶锗膜结晶的影响
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50164-7
S. Nakao, K. Saitoh, M. Ikeyama, H. Niwa, S. Tanemura, Y. Miyagawa, S. Miyagawa
{"title":"EFFECTS OF MeV ION IRRADIATION ON CRYSTALLIZATION OF AMORPHOUS Ge FILMS","authors":"S. Nakao, K. Saitoh, M. Ikeyama, H. Niwa, S. Tanemura, Y. Miyagawa, S. Miyagawa","doi":"10.1016/B978-0-444-82334-2.50164-7","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50164-7","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124609999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Energy Ion Beam Technology of Nanoelectronics on Super Hard Semiconductors 超硬半导体纳米电子学高能离子束技术
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50184-2
A. Zaitsev, W. Fahrner, V. Varichenko, A. Melnikov, S. A. Fedotov, A. Denisenko, B. Burchard, D. Fink
{"title":"High Energy Ion Beam Technology of Nanoelectronics on Super Hard Semiconductors","authors":"A. Zaitsev, W. Fahrner, V. Varichenko, A. Melnikov, S. A. Fedotov, A. Denisenko, B. Burchard, D. Fink","doi":"10.1016/B978-0-444-82334-2.50184-2","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50184-2","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116879030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Scanning Tunneling Microscopy Observation of Damage on HOPG Surface Induced by H+ and other Light Ions* H+及其他光离子对HOPG表面损伤的扫描隧道显微镜观察*
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50195-7
Wang Yugang, Kang Yixiu, Zhao Weijiang, Y. Sha, Tang Wei, Zhang Bin, Zhai Pengji, Xie Youchang, Tang Xiaowei
{"title":"Scanning Tunneling Microscopy Observation of Damage on HOPG Surface Induced by H+ and other Light Ions*","authors":"Wang Yugang, Kang Yixiu, Zhao Weijiang, Y. Sha, Tang Wei, Zhang Bin, Zhai Pengji, Xie Youchang, Tang Xiaowei","doi":"10.1016/B978-0-444-82334-2.50195-7","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50195-7","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134049797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Induced Magnetic Anisotropy in Amorphous Ferromagnetic alloys by Ion Beam Irradiation 离子束辐照诱导非晶铁磁合金的磁各向异性
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50205-7
F. Ono, N. Matsumoto, H. Maeta, J. Jakubovics, K. Haruna, T. Kato
{"title":"Induced Magnetic Anisotropy in Amorphous Ferromagnetic alloys by Ion Beam Irradiation","authors":"F. Ono, N. Matsumoto, H. Maeta, J. Jakubovics, K. Haruna, T. Kato","doi":"10.1016/B978-0-444-82334-2.50205-7","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50205-7","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132064377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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