R. Behrisch, R. Blewer, J. Borders, R. A. Langley, J. Roth, B. Scherzer, R. Schulz
{"title":"5_keV氘在BeO中的注入","authors":"R. Behrisch, R. Blewer, J. Borders, R. A. Langley, J. Roth, B. Scherzer, R. Schulz","doi":"10.1080/00337578008209257","DOIUrl":null,"url":null,"abstract":"Abstract The trapping of 5 keV deuterium in ∼ 165 and ∼ 4000 nm thick BeO films grown by thermal oxidation on Be substrates was investigated at different temperatures using the D(3He,H)4He nuclear reaction. The ratio of implanted D to BeO molecules obtained at saturation is 0.24 to 0.34. The D migrates from its end of range location and distributes itself uniformly in the BeO film. With increasing implant temperature the BeO layer flakes from the Be substrate. The distribution of D in BeO films at high concentrations is not consistent with diffusivity measurements at low concentrations of T in BeO.","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Implantation of 5_keV Deuterium in BeO\",\"authors\":\"R. Behrisch, R. Blewer, J. Borders, R. A. Langley, J. Roth, B. Scherzer, R. Schulz\",\"doi\":\"10.1080/00337578008209257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract The trapping of 5 keV deuterium in ∼ 165 and ∼ 4000 nm thick BeO films grown by thermal oxidation on Be substrates was investigated at different temperatures using the D(3He,H)4He nuclear reaction. The ratio of implanted D to BeO molecules obtained at saturation is 0.24 to 0.34. The D migrates from its end of range location and distributes itself uniformly in the BeO film. With increasing implant temperature the BeO layer flakes from the Be substrate. The distribution of D in BeO films at high concentrations is not consistent with diffusivity measurements at low concentrations of T in BeO.\",\"PeriodicalId\":251043,\"journal\":{\"name\":\"Ion Beam Modification of Materials\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ion Beam Modification of Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/00337578008209257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Beam Modification of Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/00337578008209257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Abstract The trapping of 5 keV deuterium in ∼ 165 and ∼ 4000 nm thick BeO films grown by thermal oxidation on Be substrates was investigated at different temperatures using the D(3He,H)4He nuclear reaction. The ratio of implanted D to BeO molecules obtained at saturation is 0.24 to 0.34. The D migrates from its end of range location and distributes itself uniformly in the BeO film. With increasing implant temperature the BeO layer flakes from the Be substrate. The distribution of D in BeO films at high concentrations is not consistent with diffusivity measurements at low concentrations of T in BeO.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
