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Ion Beam Modification of Materials最新文献

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Strain profiles in phosphorus implanted (100)-silicon 磷注入(100)硅的应变分布图
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50154-4
M. Remmler, L. Frey, Z. Horváth, H. Ryssel
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引用次数: 0
High-temperature boron and phosphorus ion implantation in silicon 硅中的高温硼磷离子注入
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50156-8
G. Gadiyak, A. Bibik
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引用次数: 0
New fitting formulae for simulating nuclear stopping processes 模拟核停止过程的新拟合公式
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50125-8
J. Liang, K. Liao
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引用次数: 0
Recombination of charge carriers in buried layers formed by high energy oxygen or carbon implantation into silicon 高能氧或碳注入硅形成的埋层中载流子的重组
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50181-7
S. Bogen, L. Frey, M. Herden, H. Ryssel
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引用次数: 0
Fabrication of buried channel waveguides using focussed MeV proton irradiation 聚焦MeV质子辐照制备埋槽波导
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50193-3
A. Roberts, M. V. Bibra, J. Walford
{"title":"Fabrication of buried channel waveguides using focussed MeV proton irradiation","authors":"A. Roberts, M. V. Bibra, J. Walford","doi":"10.1016/B978-0-444-82334-2.50193-3","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50193-3","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126744797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Patterns of energy dissipation in 3D fcc lattices after ion impact 离子冲击后三维fcc晶格的能量耗散模式
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50131-3
P. Guan, D. Mckenzie, B. A. Paithorpe
{"title":"Patterns of energy dissipation in 3D fcc lattices after ion impact","authors":"P. Guan, D. Mckenzie, B. A. Paithorpe","doi":"10.1016/B978-0-444-82334-2.50131-3","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50131-3","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122103217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of ion implantation on the storage and dissipation of polarisation energy in alumina 离子注入对氧化铝中极化能储存和耗散的影响
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50216-1
J. Bigarré, S. Fayeulle, D. Tréheux, K. Oh, C. Gressus
{"title":"Role of ion implantation on the storage and dissipation of polarisation energy in alumina","authors":"J. Bigarré, S. Fayeulle, D. Tréheux, K. Oh, C. Gressus","doi":"10.1016/B978-0-444-82334-2.50216-1","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50216-1","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131400734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The method of discrete streams in the sputtering theory 溅射理论中的离散流方法
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50132-5
A. Tolmachev
{"title":"The method of discrete streams in the sputtering theory","authors":"A. Tolmachev","doi":"10.1016/B978-0-444-82334-2.50132-5","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50132-5","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124649455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the relation between stress evolution and surface deformations in high dose MeV energy He implanted Si 高MeV能量He注入Si中应力演化与表面变形关系的研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50160-X
C. Hajdu, M. Fried, F. Pászti
{"title":"Investigation of the relation between stress evolution and surface deformations in high dose MeV energy He implanted Si","authors":"C. Hajdu, M. Fried, F. Pászti","doi":"10.1016/B978-0-444-82334-2.50160-X","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50160-X","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122322904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Erbium ion implantation into KTiOPO 4 -single crystals 铒离子注入ktiopo4单晶
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50191-X
T. Bachmann, M. Rottschalk
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引用次数: 1
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