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Ion Beam Modification of Materials最新文献

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Aspect ratio of heavy ion tracks in track recording dielectrics 磁道记录电介质中重离子磁道的纵横比
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50129-5
H. S. Virk, G. S. Randhawa
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引用次数: 0
Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces 离子束诱导InGaAs/InAlAs界面的相互扩散
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50189-1
T. Kimura, S. Yamamura, K. Suzuki, S. Yugo, R. Saito, M. Murata, T. Kamiya
{"title":"Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces","authors":"T. Kimura, S. Yamamura, K. Suzuki, S. Yugo, R. Saito, M. Murata, T. Kamiya","doi":"10.1016/B978-0-444-82334-2.50189-1","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50189-1","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124911234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Species Retention in Multi-Element Ion Implantation 多元素离子注入中的物种保留
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50222-7
A. Ryabchikov, I. Brown
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引用次数: 0
Anomalous resistive transition of furnace annealed rf-sputtering YBa 2 Cu 3 O x thin films on Si wafers Si晶片上退火rf溅射YBa 2 Cu 3 O x薄膜的异常电阻跃迁
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50149-0
Kazuhiro Hatanaka, T. Itoh, M. Tatumi, K. Yokota
{"title":"Anomalous resistive transition of furnace annealed rf-sputtering YBa 2 Cu 3 O x thin films on Si wafers","authors":"Kazuhiro Hatanaka, T. Itoh, M. Tatumi, K. Yokota","doi":"10.1016/B978-0-444-82334-2.50149-0","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50149-0","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121729237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modification of the thermal behavior of nitrides induced by Ar bombardment in a nitrogen implanted iron 氮注入铁中Ar轰击诱导氮化物热行为的改变
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50206-9
C. E. Foerster, L. Amaral, M. Behar
{"title":"Modification of the thermal behavior of nitrides induced by Ar bombardment in a nitrogen implanted iron","authors":"C. E. Foerster, L. Amaral, M. Behar","doi":"10.1016/B978-0-444-82334-2.50206-9","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50206-9","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129274740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LATTICE POSITION OF DISPLACED ATOMS IN BORON IMPLANTED SILICON 硼注入硅中置换原子的晶格位置
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50155-6
E. Wendler, B. Weber, W. Wesch, U. Zammit, M. Marinelli
{"title":"LATTICE POSITION OF DISPLACED ATOMS IN BORON IMPLANTED SILICON","authors":"E. Wendler, B. Weber, W. Wesch, U. Zammit, M. Marinelli","doi":"10.1016/B978-0-444-82334-2.50155-6","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50155-6","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124582663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Boron Nitride Films Synthesized By Ion Beam and Vapor Deposition 离子束气相沉积法合成氮化硼薄膜的研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50140-4
S. Nishiyama, A. Ebe, N. Kuratani, Yasushi Iwamoto, K. Ogata
{"title":"Study of Boron Nitride Films Synthesized By Ion Beam and Vapor Deposition","authors":"S. Nishiyama, A. Ebe, N. Kuratani, Yasushi Iwamoto, K. Ogata","doi":"10.1016/B978-0-444-82334-2.50140-4","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50140-4","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125468775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ELECTRICAL PROPERTY AND STRUCTURE OF DIAMOND LIKE CARBON FILMS PREPARED BY IBAD ibad制备的类金刚石碳膜的电学性质和结构
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50144-1
Zhu Hong, L. Xianghuai, Ren Congxin, Yu Yuehui, Zou Shichang
{"title":"ELECTRICAL PROPERTY AND STRUCTURE OF DIAMOND LIKE CARBON FILMS PREPARED BY IBAD","authors":"Zhu Hong, L. Xianghuai, Ren Congxin, Yu Yuehui, Zou Shichang","doi":"10.1016/B978-0-444-82334-2.50144-1","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50144-1","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127578805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An STM Study of Atomically-Flat Gold Surfaces Irradiated with Energetic Helium and Argon Ions 高能氦和氩离子辐照金原子平面表面的STM研究
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50194-5
V. Vishnyakov, G. Carter, S. Donnelly
{"title":"An STM Study of Atomically-Flat Gold Surfaces Irradiated with Energetic Helium and Argon Ions","authors":"V. Vishnyakov, G. Carter, S. Donnelly","doi":"10.1016/B978-0-444-82334-2.50194-5","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50194-5","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124586057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Irradiation-induced modifications in metal-silicon interfaces under MeV focused helium beam MeV聚焦氦束流下金属-硅界面的辐照诱导修饰
Ion Beam Modification of Materials Pub Date : 1900-01-01 DOI: 10.1016/B978-0-444-82334-2.50225-2
D. Boutard, B. Berthier
{"title":"Irradiation-induced modifications in metal-silicon interfaces under MeV focused helium beam","authors":"D. Boutard, B. Berthier","doi":"10.1016/B978-0-444-82334-2.50225-2","DOIUrl":"https://doi.org/10.1016/B978-0-444-82334-2.50225-2","url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121323239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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